ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 1 version: h1706 n - channel power mosfet 6 00 v, 2 a, 4.4 features key performance parameters p arameter value unit v ds 600 v r ds(on) (max) 4.4 g 9.4 nc application to - 251(ipak) to - 252(dpak) notes: msl 3 (moisture sensitivity level) for to - 252 (d - pak) per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit drain - source voltage v ds 6 0 0 v gate - source voltage v gs 3 0 v continuous drain current (note 1 ) t c = 25 c i d 2 a t c = 100 c 1. 35 pulsed drain current (note 2 ) i dm 8 a single pulsed avalanche energy (note 3 ) e as 55 mj single pulsed avalanche current (note 3 ) i as 2 a repetitive avalanche energy (note 2 ) e ar 4.4 mj peak diode recovery dv/dt (note 4 ) dv/dt 4.5 v/ns total power dissipation @ t c = 25 c p dtot 44 w operating junction and storage temperature range t j , t stg - 55 to +1 50 c
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 2 version: h1706 thermal performance p arameter s ymbol limit unit junction to case thermal resistance r ? j c 2.87 o c /w junction to ambient thermal resistance r ? ja 110 o c/w notes: r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr - 4 pcb in still air electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static (note 5 ) drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 600 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.5 3.6 4 .5 v gate body leakage v gs = 3 0v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 10 ua drain - source on - state resistance v gs = 10v, i d = 1a r ds(on) -- 3.9 4.4 forward transfer conductance v ds = 40v, i d = 1a g fs -- 1.5 -- s dynamic (note 6 ) total gate charge v ds = 480v, i d = 2a, v gs = 10v q g -- 9.4 -- nc gate - source charge q gs -- 2.2 -- gate - drain charge q gd -- 4.7 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 249 -- pf output capacitance c oss -- 30.7 -- reverse transfer capacitance c rss -- 5 -- gate resistance f = 1mhz, open drain r g -- 8.5 -- switching (note 7 ) turn - on delay time v gs = 10v, i d = 2a, v dd = 300v, r g = 25 t d(on) -- 9.1 -- ns turn - on rise time t r -- 9.8 -- turn - off delay time t d(off) -- 17.4 -- turn - off fall time t f -- 12.4 --
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 3 version: h1706 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit source - drain diode (note 5 ) diode forward voltage i s = 2a, v gs = 0v v sd -- 0.9 1.4 v r everse recovery time v gs = 0v, i s = 2a , di f /dt = 100a/us t rr -- 490 -- ns r everse recovery charge q rr -- 0.8 -- s -- -- 2 a source current (pulse) i s m -- -- 8 a notes: 1. current limited by package . 2. pulse width limited by the m aximum junction temperature . 3. l = 25 mh, i as = 2 a, v dd = 50 v, r g = 25, start ing t j = 25 o c . 100% eas test condition: l = 25 mh, i as = 1 a, v dd = 50v, r g = 25, starting t j = 25c 4. i sd 2a, di/dt 200a/ s , v dd bv dss , starting t j = 25oc . 5. p ulse test: pw 300s, d u ty cycle 2% . 6. for design aid only, not subject to production testing. 7. switching time is essentially independent of operating temperature.
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 4 version: h1706 ordering information part no. package packing tsm2nb60 c h c5g to - 251 (ipak) 75 pcs / tube tsm2nb60 c p rog to - 252 (dpak) 2,500pcs / 13 reel
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 5 version: h1706 c haracteristics curves ( t c = 25c unless otherwise noted) output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs. gate charge on - resistance vs. junction temperature source - drain diode forward current vs. voltage
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 6 version: h1706 characteristics curves ( t c = 25c unless otherwise noted) capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a normalized thermal transient impedance, junction - to - case 10 - 4 10 - 3 10 - 2 10 - 1 10 0 normalized effective transient thermal impedance 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 square wave pulse duration (s) duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 s ingle pulse 10 1
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 7 version: h1706 package outline dimensions ( unit: millimeters) to - 251 (ipak) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 8 version: h1706 package outline dimensions ( unit: millimeters) to - 252 (dpak) suggested pad layout ( unit: millimeters) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
ts m2nb60cp ts m2nb60ch tai wan semiconductor document number: ds_p 0000 070 9 version: h1706 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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