- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability - ideal for automated placement - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit v rrm v i f(av) a i f = 5a i f = 10a i f = 5a i f = 10a t j = 25c a t j = 125c ma v dc v r jl c/w t j c t stg c document number: ds_d1411043 version: f15 case: smpc4.0 polarity: indicated by cathode band weight: 0.095g (approximately) maximum instantaneous forward voltage (note 1) v f maximum average forward rectified current trench schottky rectifier TSPB10U45S taiwan semiconductor features mechanical data - moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec typical applications smpc4.0 trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. 0.28 maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter TSPB10U45S maximum repetitive peak reverse voltage -0.37 - marking code 45 a v - operating temperature range - 55 to +150 i r - 150 300 maximum instantaneous reverse current at rated reverse voltage - 50 140 0.42 0.46 t j = 125c 0.37 0.41 - - storage temperature range - 55 to +150 note 1: pulse test with pulse width=300 s, 1% duty cycle maximum dc reverse voltage 32 typical thermal resistance per diode 25 b10u45 t j = 25c min typ max - 10 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 275
(t a =25 o c unless otherwise noted) document number: ds_d1411043 version: f15 order information (example) ratings and characteristics curves TSPB10U45S taiwan semiconductor 0 2 4 6 8 10 12 0 25 50 75 100 125 150 with heatsink 30mm x 30mm 4 oz. pad pcb fig.1 forward current derating curve 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics average forward current (a) instantaneous forward current (a) capacitance (pf) instantaneous reverse current (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics lead temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage.(%) TSPB10U45S s1g green compound ? code packing ? code part ? no.
dim. min max min max a 5.55 5.65 0.219 0.222 b 6.35 6.65 0.250 0.262 c 3.95 4.05 0.156 0.159 d 3.40 3.70 0.134 0.146 e 4.25 4.55 0.167 0.179 f 1.69 1.99 0.067 0.078 g 2.95 3.25 0.116 0.128 h 0.70 1.00 0.028 0.039 i 0.75 1.05 0.030 0.041 j 1.69 1.99 0.067 0.078 k 1.00 1.20 0.039 0.047 l 0.20 0.40 0.008 0.016 symbol a b c d e f p/n = marking code yw = date code f = factory code document number: ds_d1411043 version: f15 unit (inch) smpc4.0 0.92 marking diagram unit (mm) 4.80 4.72 1.40 1.27 6.80 TSPB10U45S taiwan semiconductor package outline dimensions unit (mm) unit (inch) suggested pad layout 0.189 0.186 0.055 0.050 0.268 0.036
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