fjp1943 ? pnp epitaxia l silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp1943 rev. c 1 january 2009 fjp1943 pnp epitaxial silicon transistor applications ? high-fidelity audio output amplifier ? general purpose power amplifier features ? high current capability: i c = -17a. ? high power dissipation : 80watts. ? high frequency : 30mhz. ? high voltage : v ceo = -250v ? wide s.o.a for reliable operation. ? excellent gain linearity for low thd. ? complement to fjp5200 ? full thermal and electrical spice models are available. ? same transistor is also available in: -- to264 package, 2sa1943/fjl4215 : 150 watts -- to3p package, 2sa1962/fja4213 : 130 watts -- to220f package, FJPF1943 : 50 watts absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics* t a =25 c unless otherwise noted * device mounted on minimum pad size h fe classification symbol parameter ratings units bv cbo collector-base voltage -250 v bv ceo collector-emitter voltage -250 v bv ebo emitter-base voltage -5 v i c collector current -17 a i b base current -1.5 a p d total device dissipation(t c =25 c ) derate above 25 c 80 0.64 w w/ c t j , t stg junction and storage temperature - 50 ~ +150 c symbol parameter ratings units r jc thermal resistance, junction to case 1.25 c/w classification r o h fe1 55 ~ 110 80 ~ 160 to-220 1 1.base 2.collector 3.emitter
fjp1943 ? pnp epitaxia l silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp1943 rev. c 2 electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse widt=20 s, duty cycle 2% ordering information symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =-5ma, i e =0 -250 v bv ceo collector-emitter breakdown voltage i c =-10ma, r be = -250 v bv ebo emitter-base breakdown voltage i e =-5ma, i c =0 -5 v i cbo collector cut-off current v cb =-230v, i e =0 -5.0 a i ebo emitter cut-off current v eb =-5v, i c =0 -5.0 a h fe1 dc current gain v ce =-5v, i c =-1a 55 160 h fe2 dc current gain v ce =-5v, i c =-7a 35 60 v ce (sat) collector-emitter saturation voltage i c =-8a, i b =-0.8a -0.4 -3.0 v v be (on) base-emitter on voltage v ce =-5v, i c =-7a -1.0 -1.5 v f t current gain bandwidth product v ce =-5v, i c =-1a 30 mhz c ob output capacitance v cb =-10v, f=1mhz 360 pf part number marking package packing method remarks fjp1943rtu j1943r to-220 tube hfe1 r grade fjp1943otu j1943o to-220 tube hfe1 o grade
fjp1943 ? pnp epitaxia l silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp1943 rev. c 3 typical characteristics figure 1. static characteristic figure 2. dc current gain ( r grade ) figure 3. dc current gain ( o grade ) figure 4. collector-emitter saturation voltage figure 5. base-emitter saturation voltage figure 6. base-emitter on voltage -0 -2 -4 -6 -8 -10 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 i b = - 5 0 0 m a i b = - 6 0 0 m a i b = - 4 0 0 m a i b = -700ma i b = -300ma i b = -900ma i b = -200ma i b = -800ma i b = -1a i b = -100ma i c [ma], collector current v ce [v], collector-emitter voltage 0.1 1 10 1 10 100 v ce = -5v tj = -25 o c tj = 25 o c tj = 125 o c h fe , dc current gain i c [a], collector current 0.1 1 10 1 10 100 v ce = -5v tj = -25 o c tj = 25 o c tj = 125 o c h fe , dc current gain i c [a], collector current 0.1 1 10 10 100 1000 10000 ic=-10ib tj=-25 o c tj=25 o c tj=125 o c vce(sat)[mv], saturation voltage ic[a], collector current 0.1 1 10 100 1000 10000 ic=-10ib tj=-25 o c tj=25 o c tj=125 o c vbe(sat)[mv], saturation voltage ic[a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 8 10 12 14 v ce = 5v i c [a], collector current v be [v], base-emitter voltage
fjp1943 ? pnp epitaxia l silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp1943 rev. c 4 typical characteristics figure 7. power derating figure 8. thermal resistance 0 25 50 75 100 125 150 175 0 20 40 60 80 100 p c [w], power dissipation t c [ o c], case temperature 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 transient thermal resistance, r thjc [ o c / w] pulse duration [sec]
fjp1943 ? pnp epitaxia l silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp1943 rev. c 5 mechanical dimensions to220
fjp1943 pnp epitaxial silicon transistor fjp1943 ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fjp1943 rev. c 6
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