stoe30g06 thru stoe30g12 high efficiency thyristor discretes dimensions to-247ad dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 symbol test conditions maximum ratings unit tvj=tvjm tc=120 o c; 180 o sine 47 30 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 300 320 270 290 a i tsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 450 440 365 355 a 2 s i 2 t (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i t p =300us 10 5 w p gav 0.5 w i trms i tavm o c t vj t vjm t stg -55...+150 150 -55...+150 m d f c mounting torque (m3) mounting force with clip 0.8...1.2 20...120 nm n weight 6 g t vj =t vjm repetitive, it=90a f=50hz, t p =200us v d =2/3v drm i g =0.3a non repetitive, i t=30a di g /dt=0.3a/us v rgm 10 v tavm typical k=cathode, a=anode, g=cate g k a stoe30g06 vrrm v 600 vrsm v 700 a k g a(tab) stoe30g08 800 900 STOE30G10 1000 1100 stoe30g12 1200 1300 p1 ?2012 sirectifier all rights reserved www.sirectifier.com
symbol test conditions characteristic values unit v v t it=30a; tvj=25 o c 1.28 v to for power-loss calculations only (t vj=150 o c) 0.86 v r t 15 m v d =6v; t vj =25 o c t vj =-40 o c v gt 1.3 1.6 v v d =6v; t vj =25 o c t vj =-40 o c i gt 28 50 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 1 ma i h t vj =25 o c; v d =6v; r gk = 60 ma t vj =25 o c; t p =10us; i g =0.3a; di g /dt=0.3a/us 90 ma i l dc current r thjc 0.50 k/w dc current r thjh 0.25 k/w a max. acceleration, 50 hz 50 m/s 2 i r , i d t vj =t vjm ; v r =v rrm ; v d =v drm 5 ma t vj =25 o c; v d =1/2v drm i g =0.3a; di g /dt=0.3a/us t gd 2 us t vj =125 o c 25 h igh efficiency thyristor discretes ste3006 thru ste3012 yyww logo pa rt nu mber datecode prod uct ma rk ing sirectifier stoe30g12 k ga p2 ?2012 sirectifier all rights reserved www.sirectifier.com
h igh efficiency thyristor discretes stoe30g06 thru stoe30g12 0 40 80 120 1 6 0 0 20 40 60 80 0 25 50 75 0 1 2 3 4 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 0.001 0.01 0.1 1 80 120 160 200 240 280 0.5 1.0 1.5 2.0 0 10 20 30 40 50 60 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 i t [a] t[s] v [v] 2 3456 7819 0 1 100 1000 i 2 t [a 2 s] i tsm [a] t vj = 25c t vj = 125c t vj == 5c 50 hz, 80% v rrm t vj =1 25c t vj =4 5c v r = 0 v v g [v] i g [ma] i tavm [a] t case [c] [k/w] t fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration t[ms] fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current triggering: a = n o; b = possible; c = safe fig. 6 max. forward current at case temperature [ms] fig. 7 transient thermal impedance junction to case t vj =150c 125c i gd : t vj = 125c i gd :: vj =2 5c t gd [ s] lim. typ. i g [a] fig. 5 gate controlled delay time t gd 0 01 20 03 40 0 10 20 30 40 50 60 i f(av) [a] p (av) [w] fig. 7a power dissipation v ersus d irect output current fig. 7b and ambient temperature 0 255075100125150 t amb [c] t vj = 125c r thha 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 i r thi (k/w) t i (s) 1 0.08 0.01 2 0.06 0.001 3 0.2 0.02 4 0.05 0.2 5 0.11 0.11 i gt :t vj =25c i gt :t vj =0 c i gt :t vj =-40c p3 ?2012 sirectifier all rights reserved www.sirectifier.com
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