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www.irf.com 1 3/31/10 IRG7R313UPBF descriptionthis igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak currentcapability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel gc e gate collector emitter d-pak IRG7R313UPBF absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v i c @ t c = 100c continuous collector, v ge @ 15v a i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range c soldering temperature for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case CCC 1.6 c/w max. 20 160 40 30 300 -40 to + 150 7831 0.63 v ce min 330 v v ce(on) typ. @ i c = 20a 1.35 v i rp max @ t c = 25c 160 a t j max 150 c key parameters e c g c downloaded from: http:///

2 www.irf.com half sine wave with duty cycle = 0.05, ton=2 sec. r is measured at
pulse width 400 s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 330 CCC CCC v ? v ces / t j breakdown voltage temp. coefficient CCC 0.4 CCC v/c CCC 1.21 1.45 CCC 1.35 CCC 1.75 CCC v CCC 2.14 CCC CCC 1.41 CCC v ge(th) gate threshold voltage 2.2 CCC 4.7 v v ge(th) / t j gate threshold voltage coefficient CCC -10 CCC mv/c i ces collector-to-emitter leakage current CCC 1.0 10 25 150 CCC 75 CCC i ges gate-to-emitter forward leakage CCC CCC 100 na gate-to-emitter reverse leakage CCC CCC -100 g fe forward transconductance CCC 47 CCC s q g total gate charge CCC 33 CCC nc q gc gate-to-collector charge CCC 12 CCC t d(on) turn-on delay time CCC 1.0 CCC i c = 12a, v cc = 196v t r rise time CCC 13 CCC ns r g = 10 , l=210 h t d(off) turn-off delay time CCC 65 CCC t j = 25c t f fall time CCC 68 CCC t d(on) turn-on delay time CCC 11 CCC i c = 12a, v cc = 196v t r rise time CCC 14 CCC ns r g = 10 , l=200 h, l s = 150nh t d(off) turn-off delay time CCC 86 CCC t j = 150c t f fall time CCC 190 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j human body model machine model c ies input capacitance CCC 880 CCC c oes output capacitance CCC 47 CCC pf c res reverse transfer capacitance CCC 26 CCC l c internal collector inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l e internal emitter inductance CCC 7.5 CCC from package esd class 1c (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v conditions v ge = 0v, i ce = 250 a reference to 25c, i ce = 1ma v ge = 15v, i ce = 60a v ge = 15v, i ce = 12a v ge = 15v, i ce = 20a ? = 1.0mhz and center of die contact l = 220nh, c= 0.20 f, v ge = 15v l = 220nh, c= 0.20 f, v ge = 15v v cc = 240v, r g = 5.1 , t j = 100c v ce = v ge , i ce = 1.0ma v ce = 330v, v ge = 0v v ce = 330v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v a v ce = 330v, v ge = 0v, t j = 125c CCC 570 CCC v ce = 25v, i ce = 12a v ce = 240v, i c = 12a, v ge = 15v v cc = 240v, r g = 5.1 , t j = 25c CCC 480 CCC v cc = 240v, v ge = 15v, r g = 5.1 static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 20a, t j = 150c v ge = 15v, i ce = 40a downloaded from: http:///

www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 2 4 6 8 10 12 14 16 v ge (v) 0 40 80 120 160 200 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) t j = 25c t j = 150c i c = 12a downloaded from: http:///

4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-emitter voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 0 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 i c ( a ) 160 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 195 200 205 210 215 220 225 230 235 240 v ce, collector-to-emitter voltage (v) 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4 f 100c 25c 25 50 75 100 125 150 t j , temperature (oc) 400 600 800 1000 1200 1400 1600 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1 s half sine c= 0.4 f c= 0.3 f c= 0.2 f 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms 25 50 75 100 125 150 case temperature (c) 0 40 80 120 160 200 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2 s duty cycle = 0.05 half sine wave downloaded from: http:///

www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 100 200 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.018158 0.000006 0.557463 0.00017 0.666413 0.001311 0.305061 0.006923 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 0 1 02 03 04 0 q g total gate charge (nc) 0 4 8 12 16 20 v g e , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 12a downloaded from: http:///

6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st downloaded from: http:///

www.irf.com 7

int ernat ional assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 t his is an irfr120 with assembly i ndi cates "l ead- f ree" product (optional) p = designates lead-free a = assembly site code part number week 16 dat e code year 1 = 2001 rectifier international logo lot code assembly 34 12 irfr120 116a line a 34 rectifier logo irf r120 12 as s e mb l y lot code year 1 = 2001 dat e code part number week 16 "p" in as s embly line position indicates "l ead- f ree" quali fi cati on to the cons umer - l evel p = designates lead-free product qualified to the cons umer level (opt ional) note: for the most current drawing please refer to ir website at http://www .irf.com/package/ downloaded from: http:///

8 www.irf.com data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2010

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing please refer to ir website at http://www .irf.com/package/ downloaded from: http:///

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