DMP2123L p-channel enhancement mode fi eld effect transistor features ? low r ds(on) : ? 72 m @v gs = -4.5v ? 108 m @v gs = -2.7v ? 123 m @v gs = -2.5v ? low input/output leakage ? lead free by design/rohs compliant (note 3) ? qualified to aec-q101 standards for high reliability ? "green" device (note 4) mechanical data ? case: sot-23 ? case material - molded plasti c, ?green? molding compound. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish - matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram below ? weight: 0.008 grams (approximate) sot-23 source gate drain d g s top view top view internal schematic maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 1) continuous t a = 25c t a = 70c i d -3.0 -2.4 a pulsed drain current (note 2) i dm -15 a body-diode continuous current (note 1) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient (note 1); steady-state r ja 90 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on 1"x1", fr-4 pc board with 2 oz . copper and test pulse width t 10s. 2. repetitive rating, pulse widt h limited by junction temperature. 3. no purposefully added lead. 1 of 2 sales@zpsemi.com www.zpsemi.com
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition static parameters drain-source breakdown voltage bv dss -20 ? ? v i d = -250 a, v gs = 0v i dss ? ? -1 a v ds = -20v, v gs = 0v zero gate voltage drain current t j = 25 c gate-body leakage current i gss ? ? 100 na v ds = 0v, v gs = 12v gate threshold voltage v gs(th) -0.6 ? -1.25 v v ds = v gs , i d = -250 a on state drain current (note 5) i d (on) -15 ? ? a v gs = -4.5v, v ds = -5v r ds (on) ? 51 87 99 72 108 123 m v gs = -4.5v, i d = -3.5a v gs = -2.7v, i d = -3.0a v gs = -2.5v, i d = -2.6a static drain-source on-resistance (note 5) forward transconductance (note 5) g fs ? 7.3 ? s v ds = -10v, i d = -3.0a diode forward voltage (note 5) v sd ? 0.79 -1.26 v i s = -1.7a, v gs = 0v maximum body-diode continuous current (note 1) i s ? ? 1.7 a ? dynamic parameters (note 6) total gate charge q g ? 7.3 ? nc v gs = -4.5v, v ds = -10v, i d = -3.0a gate-source charge q gs ? 2.0 ? nc v gs = -4.5v, v ds = -10v, i d = -3.0a gate-drain charge q gd ? 1.9 ? nc v gs = -4.5v, v ds = -10v, i d = -3.0a turn-on delay time t d(on) ? 12 ? ns turn-on rise time t r ? 20 ? ns turn-off delay time t d(off) ? 38 ? ns t f ? 41 ? ns v ds = -10v, v gs = -4.5v, r l = 10 , r g = 6 turn-off fall time input capacitance c iss ? 443 ? pf output capacitance c oss ? 128 ? pf c rss ? 101 ? pf v ds = -16v, v gs = 0v f = 1.0mhz reverse transfer capacitance notes: 4. test pulse width t = 300 s. 5. guaranteed by design. not subject to production testing. DMP2123L p-channel enhancement mode fi eld effect transistor 2 of 2 sales@zpsemi.com www.zpsemi.com
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