this is information on a product in full production. december 2015 docid024809 rev 3 1/8 STPSC12H065C 650 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? high forward surge capability ? ecopack ? 2 compliant component description the sic diode is an ultrahigh performance power schottky diode. it is ma nufactured us ing a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimized capacitive charge at turn-off behavior is independent of temperature. especially suited for use in interleaved or bridge- less topologies, this dual -diode rectifier will boost the performance in hard switching conditions. its high forward surge capa bility ensures a good robustness during transient phases. $ . $ $ $ . 7 2 $ % table 1. device summary symbol value i f(av) 2 x 6 a v rrm 650 v t j (max) 175 c www.st.com
characteristics STPSC12H065C 2/8 docid024809 rev 3 1 characteristics when the diodes 1 and 2 are used simultaneously: ? t j (diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode2) x r th(c) to evaluate the conduction loss es use the following equation: p = 1.35 x i f(av) + 0.192 x i f 2 (rms) table 2. absolute ratings (limiting values per diode at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 135 c (1) , dc per diode 6 a t c = 135 c (2) , dc per device 12 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 60 52 400 a i frm repetitive peak forward current t c = 135 c (1) , t j = 175 c, ? = 0.1 25 a t stg storage temperature range -65 to +175 c t j operating junction temperature (3) -40 to +175 c 1. value based on r th(j-c) max (per diode) 2. value based on r th(j-c) max (per device) 3. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? ?? ------------------------- - ? table 3. thermal resi stance parameters symbol parameter typ. max. unit r th(j-c) junction to case per diode 1.6 2.4 c/w per device 0.875 1.275 r th(c) coupling - 0.15 table 4. static electrical characteristics (per diode) symbol parameter tests conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm -560 a t j = 150 c - 50 250 v f (2) forward voltage drop t j = 25 c i f = 6 a - 1.56 1.75 v t j = 150 c - 1.98 2.5 1. t p = 10 ms, ? < 2% 2. t p = 500 s, ? < 2%
docid024809 rev 3 3/8 STPSC12H065C characteristics 8 table 5. dynamic electrical characteristics (per diode) symbol parameter test conditions typ. unit q cj (1) total capacitive charge v r = 400 v 18 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 300 pf v r = 400 v, t c = 25 c, f = 1 mhz 30 1. most accurate value for the capacitive charge: 4 f m y 5 g y 5 f m 3 9 2 8 7 figure 1. forward voltage drop versus forward current (typical values, low level, per diode) figure 2. forward voltage drop versus forward current (typical values, high level, per diode) 7 d ? & 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v 7 d ? & $ , ) 0 9 ) 0 9 , ) 0 $ 7 d ? & 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v 7 d ? & 9 ) 0 9 figure 3. reverse leakage current versus reverse voltage applied (typical values, per diode) figure 4. peak forward current versus case temperature , 5 ? $ ( ( ( ( ( 7 m ? & 7 m ? & 7 m ? & 9 5 9 , 0 $ 7 / w s 7 w s / / / / / 7 & ? &
characteristics STPSC12H065C 4/8 docid024809 rev 3 figure 5. junction capacitance versus reverse voltage applied (typical values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration & m s ) 9 5 9 ) 0 + ] 9 2 6 & p 9 5 0 6 7 m ? & ( ( ( ( ( ( 6 l q j o h s x o v h w s v = w k m f 5 w k m f figure 7. non-respective peak surge forward current versus pulse duration (sinusoidal waveform, per diode) figure 8. total capacitive charges versus reverse voltage applied (typical values, per diode) ( ( ( ( ( ( ( , ) 6 0 $ 7 d ? & 7 d ? & w s 6 9 5 9 4 f m q &
docid024809 rev 3 5/8 STPSC12H065C package information 8 2 package information ? epoxy meets ul94, v0 ? cooling method: conduction (c) ? recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com. ecopack ? is an st trademark. 2.1 to-220ab package information figure 9. to-220ab package outline $ ) ' - +
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package information STPSC12H065C 6/8 docid024809 rev 3 table 6. to-220ab package mechanical data ref. dimensions millimeters inches (1) 1. values in inches are converted from mm and rounded to 4 decimal digits. typ. min. max. typ. min. max. a 4.40 4.60 0.17 0.18 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 d 15.25 15.75 0.60 0.62 d1 1.27 0.05 e 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.24 0.26 j1 2.40 2.72 0.094 0.107 l 13 14 0.51 0.55 l1 3.50 3.93 0.137 0.154 l20 16.40 0.64 l30 28.90 1.13 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116
docid024809 rev 3 7/8 STPSC12H065C ordering information 8 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STPSC12H065Ct psc12h065ct to-220ab 1.86 g 50 tube table 8. document revision history date revision changes 24-jun-2013 1 first issue. 07-nov-2013 2 updated figure 1 and figure 2. 10-dec-2015 3 updated cover page and table 7 . format updated to current standard.
STPSC12H065C 8/8 docid024809 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved
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