this is information on a product in full production. july 2015 docid024086 rev 2 1/8 STPSC12H065 650 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? dedicated to pfc applications ? high forward surge capability description the sic diode is an ultrahigh performance power schottky diode. it is manufactured using a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimal capacitive turn-off behavior is independent of temperature. especially suited for use in pfc applications, this st sic diode will boost the performance in hard switching conditions. its high forward surge capability ensures a good robustness during transient phases. . 7 2 $ & . $ . $ table 1. device summary symbol value i f(av) 12 a v rrm 650 v t j (max) 175 c www.st.com
characteristics STPSC12H065 2/8 docid024086 rev 2 1 characteristics to evaluate the conduction losses use the following equation: p = 1.35 x i f(av) + 0.096 x i f 2 (rms) table 2. absolute ratings (limiting values at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 130 c (1) , = 0.5 1. value based on r th(j-c) max. 12 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 100 90 400 a i frm repetitive peak forward current t c = 130 c (1) , t j = 150 c, = 0.1 50 a t stg storage temperature range -55 to +175 c t j operating junction temperature (2) 2. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 c table 3. thermal resistance symbol parameter value unit typ. m ax. r th(j-c) junction to case 1.00 1.4 c/w table 4. static electrical characteristics symbol parameter tests conditions min. typ. max. unit i r (1) 1. t p = 10 ms, < 2% reverse leakage current t j = 25 c v r = v rrm -10120 a t j = 150 c - 100 500 v f (2) 2. t p = 500 s, < 2% forward voltage drop t j = 25 c i f = 12 a -1.561.75 v t j = 150 c - 1.98 2.5 table 5. dynamic electrical characteristics symbol parameter test conditions typ. unit q cj (1) 1. most accurate value for the capacitive charge: total capacitive charge v r = 400 v, 36 nc c j to ta l c a pa ci tan c e v r = 0 v, t c = 25 c, f = 1 mhz 600 pf v r = 400 v, t c = 25 c, f = 1 mhz 60 dptot dtj --------------- 1 rth j a ? () ------------------------- - < q = c j (v r ).dv r cj v out 0
docid024086 rev 2 3/8 STPSC12H065 characteristics 8 figure 1. forward voltage drop versus forward current (typical values, low level) figure 2. forward voltage drop versus forward current (typical values, high level) i(a) fm 0 4 8 12 16 20 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c v(v) fm i(a) fm 0 20 40 60 80 100 120 012345678 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c v(v) fm figure 3. reverse leakage current versus reverse voltage applied (typical values) figure 4. peak forward current versus case temperature i (a) r 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 50 100 150 200 250 300 350 400 450 500 550 600 650 t j =25 c t j =150 c t j =175 c v(v) r i(a) m 0 20 40 60 80 0 25 50 75 100 125 150 175 t = tp/t tp = 0.1 = 0.3 = 0.5 = 1.0 = 0.7 t (c) c figure 5. junction capacitance versus reverse voltage applied (typical values ) figure 6. relative variation of thermal impedance junction to case versus pulse duration 0 100 200 300 400 500 600 0.1 1.0 10.0 100.0 1000.0 f=1 mhz v osc =30 mv rms t j =25 c v r (v) c (pf) j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 z th(j -c) /r th(j -c) single pulse t p (s)
characteristics STPSC12H065 4/8 docid024086 rev 2 figure 7. non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) figure 8. total capacitive charges versus reverse voltage applied (typical values) 1.e+01 1.e+02 1.e+03 1.e-05 1.e-04 1.e-03 1.e-02 t a =25 c t a =125 c t p (s) i (a) fsm 0 8 16 24 32 40 0 50 100 150 200 250 300 350 400 q cj (nc) v r (v)
docid024086 rev 2 5/8 STPSC12H065 package information 8 2 package information ? epoxy meets ul94, v0 ? recommended torque value: 0.55 nm ? maximum torque value: 0.7 nm ? cooling method: conduction (c) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 2.1 to-220ac package information figure 9. to-220ac package outline a c d l7 ? i l5 l6 l9 l4 f h2 g l2 f1 e m
package information STPSC12H065 6/8 docid024086 rev 2 table 6. to-220ac package mechanical data ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. i 3.75 3.85 0.147 0.151
docid024086 rev 2 7/8 STPSC12H065 ordering information 8 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STPSC12H065d psc12h065d to-220ac 1.86 g 50 tube table 8. document revision history date revision changes 27-nov-2014 1 first issue. 13-jul-2015 2 removed d2pak package information and updated table 7 .
STPSC12H065 8/8 docid024086 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved
|
