jiangsu changjiang electron ics technology co., ltd to-92mod plastic-encapsulate transistors 3CG751 transistor (pnp) feature y high power amplifier y low v ce(sat) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -1.5 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics ( t a =25 unless otherwise specified ) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c = -100a, i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100a , i c =0 -5 v collector cut-off current i cbo v cb = -30 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-2 v, i c = -500ma 100 400 collector-emitter saturation voltage v ce(sat) i c = -1.5 a, i b = -30ma -2 v transition frequency f t v ce = -5v, i c = -100ma 50 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 80 pf classification of h fe rank o y range 100-240 150-400 to-92mod 1.emitter 2.collector 3.base j c ( t www.cj-elec.com 1 www.cj-elec.com c,mar,2016 a,jun,2011
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 4.800 5.000 0.189 0.197 a1 1.730 2.030 0.068 0.080 b 0.440 0.600 0.017 0.024 b1 0.940 1.100 0.037 0.043 c 0.350 0.450 0.014 0.018 d 5.900 6.100 0.232 0.240 d1 4.000 0.157 e 8.500 8.700 0.335 0.343 e 1.500 typ. 0.059 typ. e1 2.900 3.100 0.114 0.122 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.380 0.000 0.015 h www.cj-elec.com 2 a,jun,2014 www.cj-elec.com c,mar,2016
www.cj-elec.com 3 a,jun,2014 www.cj-elec.com c,mar,2016
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