production process TQP13-N 0.13 um d phemt foundry service features ? low cost optical lithography 0.13um gate ? high ft, ~95 ghz ? low noise, < 0.5 db in ku-band ? interconnects: 2 layers (1 air- bridge & 1 local) ? high value mim capacitor ? resistors ? thin film resistor ? epi resistor ? backside vias ? high volume 150 mm wafers ? same baseline as mass produc- tion today applications ? dbs lnb and down convert ? automotive radar ? satellite communications ? low noise point to point/point to multipoint radio lna ? high frequency medium power ? high frequency mixer ? fiber optic tia and driver, 10gb/s - 40gb/s general description triquint's TQP13-N process is a unique, low-cost 150mm wafer, optical lithography 0.13um phemt process used for low noise and medium power applications in ku-band through v-band ap- plications. the process features a highly repeatable 0.13um self-aligned gate phemt fet coupled with high density capaci- tors, epi resistors, thin film resistors (tfr), and 2 layers of gold interconnect. with typical ft of 95 ghz, the process is used for v-band automotive radar and high frequency point to point radio applications. with typical nf < .5db in ku-band, the process is used for low cost lnb amplifier and convert blocks in consumer direct broadcast satellite dish systems. simple to use, repeat- able and highly competitive tqp 13-n is ideal for emerging con- sumer mmwave applications. page 1 of 4; rev 0.1 2/09/2004 0.13 um phemt device cross-section page 1 of 4; rev 1.1 01/14/2008 0.13 um phemt (TQP13-N) process cross-section
production process TQP13-N 0.13 um d phemt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 2 of 5; rev 2.0 7/22/03 process details (typical specifications) element parameter value units d-mode phemt vp (1ua/um) -0.3 v idss 100 ma/mm gm (max) 750 ms/mm breakdown, vds 8 (typical) 5.5 (min) v ft @ 250ma/mm 95 ghz imax (vgs=0.7 v) 550 ma/mm nf (12 ghz) < 0.5 db common process element details gate length 0.13 m interconnect 2 metal layers mim caps value 340 pf/mm2 epi 105 ohms/sq backside vias yes mask layers no backside vias 13 with backsidevias 15 resistors nicr 50 ohms/sq TQP13-N process details maximum ratings storage temperature range -65 to +150 deg c operating temperature range -55 to +150 deg c page 2 of 4; rev 0.1 2/09/2004 production process page 2 of 4; rev 1.1 01/14/2008
gm (ms/mm) production process TQP13-N 0.13 um d phemt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 3 of 5; rev 2.0 7/22/03 page 3 of 4; rev 0.1 2/09/2004 production process TQP13-N gm vs. vgs TQP13-N ft vs. id page 3 of 4; rev 1.1 01/14/2008
production process TQP13-N 0.13 um d phemt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 4 of 5; rev 2.0 7/22/03 page 4 of 4; rev 1.1 01/14/2008 production process 0.13 um lg manufacturing services ? mask making ? production 150 wafer fab ? wafer thinning ? wafer sawing ? backside vias ? dc die sort testing ? rf on-wafer testing ? plastic packaging ? rf packaged part testing please contact your local triquint se miconductor representative/ distributor or foundry services division market ing for additional information: e-mail: sales@triquint.com; phon e: (503) 615-9000 fax: (503) 615-8905 prototyping and development ? prototype development quickturn (pdq): ? shared maskset ? standard cycle time ? prototype wafer option (pwo): ? customer-specific masks, customer schedule ? 2 wafers delivered ? standard cycle time training ? gaas design classes: ? half day introduction; upon request ? three days technical training; fall & spring at triquint oregon facility
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