all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 02.1, 2016-06-22 pxac203302fv thermally-enhanced high power rf ldmos fet 330 w, 28 v, 1880 C 2025 mhz description the pxac203302fv is a 330-watt ldmos fet with an asym - metrical design intended for use in multi-standard cellular power amplifer applications in the 1880 to 2025 mhz frequency band. features include dual-path design, input matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. pxac203302fv package h-37275-4 rf characteristics single-carrier wcdma specifications (tested in infineon doherty test fixture) v dd = 28 v, i dq = 900 ma, v gspeak = 1.1 v, p out = 56 w avg, ? 1 = 2025 mhz, 3gpp signal, channel bandwidth = 3.84mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15 16 db drain effciency h d 45 49 % adjancent channel power ratio acpr C30.5 C26 dbc features ? broadband internal input and output matching ? asymmetrical doherty design - main : p 1db = 130 w typ - peak : p 1db = 200 w typ ? typical pulsed cw performance, 2025 mhz, 28 v, combined outputs, doherty confguration - output power at p 1db = 250 w - effciency = 55% - gain = 16 db ? capable of handling 10:1 vswr @28 v, 250 w (cw) output power ? human body model class 2 (per ansi/esda/ jedec js-001) ? integrated esd protection ? low thermal resistance ? pb-free and rohs compliant -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 900 ma, ? = 2025 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c203302fv_g1
data sheet 2 of 8 rev. 02.1, 2016-06-22 pxac203302fv dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.088 w on-state resistance (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.088 w operating gate voltage (main) v ds = 28 v, i dq = 900 ma v gs 2.5 2.7 2.8 v (peak) v ds = 28 v, i dq = 0 a v gs 0.6 1.1 1.4 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (main, t case = 70c, 56.2 w cw) r qjc 0.62 c/w (peak, t case = 70c, 260 w cw) r qjc 0.35 c/w ordering information type and version order code package description shipping pxac203302fv v1 r0 pxac203302fvv1r0xtma1 h-37275-4, earless fange tape & reel, 50 pcs pxac203302fv v1 r250 PXAC203302FVV1R250xtma1 h-37275-4, earless fange tape & reel, 250 pcs
pxac203302fv data sheet 3 of 8 rev. 02.1, 2016-06-22 typical performance (data taken in a production test fxture) 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 57 efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 900 ma, ? = 2025 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz acpu acpl efficiency c203302fv_g2 30 35 40 45 50 10 15 20 25 30 1750 1850 1950 2050 2150 efficiency (%) gain (db) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 47.5 dbm, 3gpp wcdma signal, par = 10 db efficiency gain c203302fv_g3 -25 -20 -15 -10 -5 -35 -30 -25 -20 -15 1750 1850 1950 2050 2150 return loss (db) acpl & acp up (dbc) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 47.5 dbm, 3gpp wcdma signal, par = 10 db acpu acpl irl c203302fv_g4 0 10 20 30 40 50 60 0 4 8 12 16 20 24 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 900ma 2010mhz gain 2025mhz gain 1920mhz gain 1880mhz gain 2025mhz eff 2010mhz eff 1920mhz eff 1880mhz eff c203302fv_g5 efficiency gain
data sheet 4 of 8 rev. 02.1, 2016-06-22 pxac203302fv typical performance (cont.) load pull performance main side load pull performance C pulsed cw signal: 160 s, 10% duty cycle, 28 v, i dq = 800 ma, class ab p 1db max output power max drain efficiency freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1880 2.78 C j6.42 1.33 C j2.33 18.5 52.5 179 55.1 3.40 C j1.31 21.2 50.0 100 66.7 1900 2.94 C j6.93 1.31 C j2.40 18.5 52.5 176 54.4 2.82 C j1.21 21.2 50.1 102 65.5 1920 3.81 C j7.27 1.30 C j2.46 18.5 52.4 174 53.8 2.61 C j1.25 21.0 50.4 108 65.6 2010 6.13 C j8.11 1.17 C j2.61 18.4 52.1 164 50.6 2.19 C j1.29 21.2 50.0 100 63.2 2025 8.73 C j8.92 1.29 C j2.65 18.8 52.2 168 53.9 2.19 C j1.35 21.2 50.1 101 62.9 peak side load pull performance C pulsed cw signal: 160 s, 10% duty cycle, 28 v, v gs = 1.4 v, class c p 1db max output power max drain efficiency freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1880 1.47 C j3.68 2.40 C j2.40 15.4 54.0 250 54.8 1.69 C j0.40 16.5 52.0 159 65.4 1900 1.52 C j4.02 2.08 C j2.31 15.8 54.0 249 55.8 1.58 C j0.55 16.9 52.1 164 66.9 1920 1.54 C j4.21 2.29 C j2.39 15.9 53.9 247 55.6 1.44 C j0.58 17.0 51.9 156 66.7 2010 2.84 C j4.51 2.51 C j2.67 16.1 53.7 236 54.5 1.50 C j1.19 17.2 52.1 162 64.3 2025 4.34 C j5.13 2.68 C j2.58 16.4 53.8 192 55.2 1.37 C j1.22 17.3 51.9 155 64.6 -20 -15 -10 -5 15 16 17 18 1825 1875 1925 1975 2025 2075 input return loss (db) gain (db) frequency (mhz) cw performance small signal gain & input return loss v dd = 28 v, i dq = 900 ma irl gain c203302fv_g7 0 10 20 30 40 50 60 0 4 8 12 16 20 24 29 33 37 41 45 49 53 57 efficiency (%) power gain (db) output power (dbm) cw performance at various v dd i dq = 900 ma, ? = 2025 mhz 24v gain 28v gain 32v gain 24v eff 28v eff 32v eff c203302fv_g6 gain efficiency
pxac203302fv data sheet 5 of 8 rev. 02.1, 2016-06-22 reference circuit , 1880 C 2025 mhz reference circuit assembly diagram (not to scale) c212 c 206 c203 c201 c214 c209 c213 c204 c 208 c205 c 210 c207 c202 r 101 c109 r 103 c106 c103 c111 c101 r 102 c102 c110 c105 c104 c108 c107 c112 pxac203302 fv_in_01 rf_in rf_out v dd v gs v dd p x a c 2 0 3 3 0 2 f v _ c d _ 0 6 - 0 9 - 2 0 1 5 ro4350 , .020 mil (61) pxac 203302fv _out_01 ro4350 , .020 mil (61) u1 c215 c211 v gspk
data sheet 6 of 8 rev. 02.1, 2016-06-22 pxac203302fv reference circuit (cont.) reference circuit assembly dut pxac203302fc v1 test fixture part no. lta/pxac203302fc v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1880 C 2025 mhz find gerber files for this test fixture on the infineon web site at http://www.infineon.com/rfpower components information component description manufacturer p/n input c101, c110 capacitor, 10 f taiyo yuden umk325c7106mm-t c102, c103, c104, c105 capacitor, 15 pf atc atc600f150jt250xt c106, c111 capacitor, 1 pf atc atc600f1r0bt250xt c107 capacitor, 2.7 pf atc atc600f2r7bt250xt c108 capacitor, 1.6 pf atc atc600f1r6bt250xt c109 capacitor, 0.5 pf atc atc600f0r5bt250xt c112 capacitor, 0.8 pf atc atc600f0r8bt250xt r101, r102 resistor, 10 w panasonic electronic components erj-3geyj100v r103 resistor, 50 w richardson c16a50z4 u1 hybrid coupler anaren x3c19p1-05s output c201, c202 capacitor, 15 pf atc atc600f150jt250xt c203 capacitor, 1.6 pf atc atc600f1r6bt250xt c204, c205 capacitor, 6.8 pf atc atc600f6r8bt250xt c206 capacitor, 0.3 pf atc atc600f0r3bt250xt c207, c208, c209, c212, c213, c214 capacitor, 10 f taiyo yuden umk325c7106mm-t c210 capacitor, 0.5 pf atc atc600f0r5bt250xt c211, c215 capacitor, 220 f cornell dubilier electronics (cde) sk221m050st pinout diagram (top view) lead connections for pxac203302fv s d1 g1 d2 g2 h - 372 75- 4_ fl- d mp _pd _01 _08 -1 3-2 01 4 main peak pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (fange)
pxac203302fv data sheet 7 of 8 rev. 02.1, 2016-06-22 package outline specifcations package h-37275-4 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower 4x 11.68 [.460] 2x 45 x 1.19 [45 x .047] c l c l l c 2x (2.03 [.080]) 13.72 [.540] 9.14 [.360] (16.61 [.654]) 10.160 [.400] 1.63 [.064] 2.13 [.084] sph 3.2260.508 [.127.020] .180 31.2420.28 [1.230.011] s g1 g2 d1 d2 32.26 [1.270] +0.25 c66065-a0004-c250-01-0027 h-37275-4-x l c 4.57 ?0.13 [ +.010 -.005 ] l c h-37275-4-r02_po_12-22-2014 [ ] 4x r0.51 +0.38 ?0.13 r.020 +.015 ?.005 24.40 [1.000] diagram notesunless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.127 + 0.051 mm [0.005 0.002 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
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