1. product profile 1.1 general description 10 w plastic ldmos power transistor for base station applications at frequencies from 700 mhz to 2700 mhz. [1] test signal: 2-carrier w-cdma; carrier spacin g = 5 mhz. par = 8.4 db at 0.01 % probability on ccdf. 1.2 features and benefits ? high efficiency ? excellent ruggedness ? designed for broadband operation ? excellent thermal stability ? high power gain ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? cdma ? w-cdma ? gsm edge ? mc-gsm ? lte ? wimax blp8g27-10 power ldmos transistor rev. 1 ? 24 august 2015 product data sheet table 1. application performa nce (multiple frequencies) typical rf performance at t case =25 ? c; i dq = 110 ma; in a class-ab application circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (dbm) (db) (%) (dbc) pulsed cw 2700 110 28 33 17 19 - 2-carrier w-cdma [1] 2700 110 28 33 17 22 ? 47.3
blp8g27-10 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved. product data sheet rev. 1 ? 24 august 2015 2 of 12 nxp semiconductors blp8g27-10 power ldmos transistor 2. pinning information [1] to be used in singl e ended applications only. [2] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol [1] 1, 2, 7, 8, 9, 10, 15, 16 n.c. 3, 4, 5, 6 gate 11, 12, 13, 14 drain exposed die-pad source [2] 7 u d q v s d u h q w w r s y l h z h [ s r v h g g l h s d g d d d table 3. ordering information type number package name description version blp8g27-10 hvson16 plastic thermal enhanced very thin small outline package; no leads;16 terminals; body 4 ? 6 ? 0.85 mm sot1371-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =2w 3.2 k/w
blp8g27-10 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved. product data sheet rev. 1 ? 24 august 2015 3 of 12 nxp semiconductors blp8g27-10 power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.18ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 18 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v ? 1.4 - +1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75v - 3.2 - a i gss gate leakage current v gs =11v; v ds =0v - - 140 na g fs forward transconductance v ds =10v; i d =18ma - 160 - ms r ds(on) drain-source on-state resistance v gs =v gs(th) +3.75v; v ds =10v; i d =630ma - 1000 - m ? table 7. rf characteristics a derivative functional rf test is performed in production. the performance as mentioned below is verified by design and characterization in an nxp class-ab application board. test signal: pulsed cw; ? = 10%; t p = 100 ? s; v ds = 28 v; i dq = 110 ma; t case = 25 ? c; f = 2140 mhz symbol parameter conditions min typ max unit g p power gain p l(av) =2w 16 17 - db ? d drain efficiency p l(av) =2w 17 19 - % p l(1db) output power at 1 db gain compression 10 - - w
blp8g27-10 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved. product data sheet rev. 1 ? 24 august 2015 4 of 12 nxp semiconductors blp8g27-10 power ldmos transistor 7. application information 7.1 application circuit printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 8 for list of components. fig 1. component layout table 8. list of components see figure 1 for component layout. component description value remarks c1 multilayer ceramic chip capacitor 10 ? fmurata c2 multilayer ceramic chip capacitor 1 ? fmurata c3 multilayer ceramic chip capacitor 15 pf atc 600f c4 multilayer ceramic chip capacitor 2 pf atc 600f c5 multilayer ceramic chip capacitor 1.3 pf atc 600f c6 multilayer ceramic chip capacitor 0.5 pf atc 600f c7 multilayer ceramic chip capacitor 1.8 pf atc 600f c8 multilayer ceramic chip capacitor 0.3 pf atc 600f c9 multilayer ceramic chip capacitor 0.9 pf atc 600f r1 chip resistor 5.1 ? r2 chip resistor 0 ? q1 transistor - blp8g27-10 d d d & |