vishay tlmpg / TLMYG3200 document number 83174 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 19210 c a c e3 pb pb-free power smd led in plcc-3 package description the tlm.32.. series is an advanced development in terms of heat dissipation. the leadframe profile of this plcc-3 smd package is optimized to reduce the thermal resistance. this allows higher drive current and doubles the light output compared to vishay?s high intensity smd led in plcc-2 package. features utilizing alingap technology angle of half intensity ? = 60 available in 8 mm tape luminous intensity, color and forward voltage categorized per packing unit luminous intensity ratio per packing unit i vmax /i vmin 1.6 esd class 2 suitable for all soldering methods according to cecc lead-free device applications traffic signals and signs interior and exterior lighting dashboard illumination indicator and backlighting purposes for audio, video, lcd?s switches, symbols, illuminated advertising etc. parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlmpg3200, TLMYG3200 part color, luminous intensity tlmpg3200 pure green, i v = 50 mcd (typ.) TLMYG3200 yellow green, i v = 130 mcd (typ.) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 70 ma power dissipation t amb 65 c (290 k/w), t amb 70 c (270 k/w) p tot 180 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ ambient mounted on pc board (pad size > 5 mm 2 ) r thja 270 k/w r thja 290 k/w
www.vishay.com 2 document number 83174 rev. 1.4, 31-aug-04 vishay tlmpg / TLMYG3200 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified pure green tlmpg3200 yellow green TLMYG3200 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit luminous intensity i f = 50 ma i v 25 50 mcd luminous flux i f = 50 ma i v 140 mlm dominant wavelength i f = 50 ma d 555 564 567 nm peak wavelength i f = 50 ma p 565 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 15 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 2.2 2.6 v reverse current v r = 5 v v r 0.01 10 a parameter test condition symbol min ty p. max unit luminous intensity i f = 50 ma i v 63 130 mcd luminous flux i f = 50 ma i v 380 mlm dominant wavelength i f = 50 ma d 566 574 577 nm peak wavelength i f = 50 ma p 576 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 20 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 2.2 2.6 v reverse current v r = 5 v v r 0.01 10 a figure 1. power dissipation vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 18567 r thja = 290 k/w v p - power dissipation ( mw ) t amb - ambient t emperature ( c) 270 k/w figure 2. forward current vs. ambient temperature 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 18568 f i - forward current ( ma ) t amb - ambient t emperature ( c) r thja = 290 k/w 270 k/w
vishay tlmpg / TLMYG3200 document number 83174 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 figure 3. forward current vs. forward voltage figure 4. rel. luminous intensity vs. angular displacement figure 5. relative luminous intensity vs. wavelength 0 10 20 30 40 50 60 70 80 90 100 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 v f ? forward voltage ( v ) 18644 yellow green pure green f i ? forward current ( ma ) 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 510 520 530 540 550 560 570 580 590 600 610 18648 pure green i ? relative luminous intensity vrel o ? wavelength ( nm ) figure 6. change of forward voltage vs. ambient temperature figure 7. rel. luminous intensity vs. ambient temperature figure 8. relative luminous intensity vs. forward current -300 -200 -100 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 t amb - ambient t emperature ( c) 18615 v - change of forward voltage ( mv ) ? f 10 ma 30 ma 50 ma pure green 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 t amb - ambient t emperature ( c) 18616 i - relative luminous intensity vrel pure green 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 18645 i ?relative luminous intensity vrel pure green
www.vishay.com 4 document number 83174 rev. 1.4, 31-aug-04 vishay tlmpg / TLMYG3200 vishay semiconductors figure 9. change of dominant wavelength vs. forward current figure 10. change of dominant wavelength vs. ambient temperature figure 11. relative luminous intensity vs. wavelength ?3 ?2 ?1 0 1 2 3 10 20 30 40 50 60 70 80 90 100 18650 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) pure green -8 -6 -4 -2 0 2 4 6 8 -50 -25 0 25 50 75 100 t amb - ambient t emperature ( c) 18617 - change of dom. wavelength (nm) ? d pure green 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 520 530 540 550 560 570 580 590 600 610 620 18647 yellow green i ? relative luminous intensity vrel o ? wavelength ( nm ) figure 12. change of forward voltage vs. ambient temperature figure 13. rel. luminous intensity vs. ambient temperature figure 14. relative luminous intensity vs. forward current -300 -200 -100 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 t amb - ambient t emperature ( c) 18618 v - change of forward voltage ( mv ) ? f 10 ma 30 ma 50 ma 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 t amb - ambient t emperature ( c) 18619 i - relative luminous intensity vrel yellow green 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 18646 i ?relative luminous intensity vrel yellow green
vishay tlmpg / TLMYG3200 document number 83174 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 package dimensions in mm figure 15. change of dominant wavelength vs. forward current ?3 ?2 ?1 0 1 2 3 10 20 30 40 50 60 70 80 90 100 18649 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) yellow green figure 16. change of dominant wavelength vs. ambient temperature -8 -6 -4 -2 0 2 4 6 8 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 18620 - change of dom. wavelength (nm) ? d yellow green mounting pad layout 3.5 0.2 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5054.01-4 issue: 1; 19.02.04 0.4 0.9 4 4 0.5 16276 0.85
www.vishay.com 6 document number 83174 rev. 1.4, 31-aug-04 vishay tlmpg / TLMYG3200 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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