1 ELM34601AA-N ELM34601AA-N uses advanced trench technology to provide excellent rds(on) and low gate charge. parameter symbol n-ch (max.) p-ch (max.) unit note drain - source voltage vds 30 -30 v gate - source voltage vgs 20 20 v continuous drain current ta=25c id 7 -6 a ta=70c 6 -5 pulsed drain current idm 28 -24 a 3 power dissipation ta=25c pd 2.0 2.0 w ta=70c 1.3 1.3 junction and storage temperature range tj,tstg - 55 to 150 - 55 to 150 c general description features maximum absolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - ambient rja n-ch 62.5 c /w maximum junction - to - ambient rja p-ch 62.5 c /w complementary mosfet s 2 g 2 d 2 s 1 g 1 d 1 circuit ? n-ch ? p-ch 7 - pin configuration sop-8(top view) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 n-channel p-channel ? vds=30v vds=-30v ? id=7a id=-6a ? rds(on) < 21m(vgs=10v) rds(on) < 35m(vgs=-10v) ? rds(on) < 32m(vgs=4.5v) rds(on) < 60m(vgs=-4.5v)
2 electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs = 0v 1 a vds=20v, vgs = 0v, tj=55c 10 gate - body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250a 0.8 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 28 a 1 static drain - source on - resistance rds(on) vgs=10v, id= 7a 14 21 m 1 vgs = 4.5v, id = 6a 21 32 forward transconductance gfs vds = 10v, id = 5a 8 s 1 diode forward voltage vsd if = 1a, vgs=0v 1 v 1 max.body - diode continuous current is 3 a pulsed current ism 6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 1700 pf output capacitance coss 380 pf reverse transfer capacitance crss 260 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=6a 40 nc 2 gate - source charge qgs 28 nc 2 gate - drain charge qgd 12 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rgen=6 20 ns 2 turn - on rise time tr 10 ns 2 turn - off delay time td(off) 120 ns 2 turn - off fall time tf 35 ns 2 body - diode reverse recovery time trr if =5 a, dl/dt = 100a/s 15.5 ns body - diode reverse recovery charge qrr 7.9 nc ELM34601AA-N ta=25 c complementary mosfet note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. 7 -
3 ELM34601AA-N typical electrical and thermal characteristics (n-ch) complementary mosfet 7 - 4 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free
4 ELM34601AA-N complementary mosfet 7 - 5 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free niko-sem
5 electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - source breakdown voltage bvdss id= - 250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v - 1 a vds=-20v, vgs= 0v, tj=55c -10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id= - 250a -0.8 -1.5 -2.5 v on state drain current id(on) vgs= - 10v, vds= - 5v -24 a 1 static drain - source on - resistance rds(on) vgs=-10v, id=-6 a 28 35 m 1 vgs =- 4.5v, id =- 5a 44 60 forward transconductance gfs vds =- 10v, id =-5 a 7 s 1 diode forward voltage vsd if =- 1a, vgs=0v -1 v 1 max.body - diode continuous current is -3 a pulsed current ism -6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-10v, f=1mhz 970 pf output capacitance coss 370 pf reverse transfer capacitance crss 180 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-5a 28 nc 2 gate-source charge qgs 6 nc 2 gate-drain charge qgd 12 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-1a, rl=1, rgen=6 20 ns 2 turn - on rise time tr 17 ns 2 turn - off delay time td(off) 160 ns 2 turn - off fall time tf 75 ns 2 body - diode reverse recovery time trr if =-5 a, dl/dt = 100a/s 15.5 ns body - diode reverse recovery charge qrr 7.9 nc ta=25 c note : 1. pulse test : pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. ELM34601AA-N complementary mosfet 7 -
6 typical electrical and thermal characteristics (p-ch) ELM34601AA-N complementary mosfet 7 - 6 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free
7 ELM34601AA-N complementary mosfet 7 - 7 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free niko-sem
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