discription RTGN14BAP is a one chip transistor with built-in bias transistor. feature built-in bias resistor r2=10k ? high collector current ic=1a built-in zener diode between collector and base application motor driver circuit small-signal transistor RTGN14BAP transistor with resistor for swithing application silicon npn epitaxial type outline drawing unit mm maximum rating ta=25 symbol parameter rating unit v cbo collector to base voltage 6010 v v ebo emitter to base voltage 10 v v ceo collector to emitter voltage 6010 v i c collector current (dc) 1 a i cm collector current (pulse) 2 a p c collector dissipation 500 mw t j junction temperature 150 t stg storage temperature -55 150 terminal connector : emitter : collector : base jedec : 4.2 max ec b 4.6 max 1.6 2.5 3.0 1.5 0.53 max 0.48 max 0.8 min 1.5 0.4 marking equivalent circuit marking n a p art of eiaj standard the last number of fisical year running no. g marking month is ahaya ele c tr on i cs co rp o rati on r1 r2 b e c
small-signal transistor RTGN14BAP transistor with resistor for swithing application silicon npn epitaxial type small-signal transistor RTGN14BAP transistor with resistor for swithing application silicon npn epitaxial type small-signal transistor RTGN14BAP transistor with resistor for swithing application silicon npn epitaxial type electrical characteristics ta=25 limits symbol parameter test conditions min typ max unit i cbo collector cut off current v cb =40vie=0 D D 0.1 ua v il input voltage (off) v ce =5vi c =100a 0.3 D D v hfe1 dc forward current gain v ce =2vi c =0.1a 200 D D D hfe2 dc forward current gain v ce =2vi c =0.5a 300 D D D hfe3 dc forward current gain v ce =2vi c =1a 200 D D D vce(sat) c to e saturation voltage ic=500ma,ib=5ma 400 mv r emitter ? base resistor D 7 10 13 k is ahaya ele c tr on i cs co rp o rati on
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