sop8 jiangsu changjiang electronics technology co., ltd sop8 plastic-encapsulate mosfets CJQ4459 p-channel power mo sfet description the CJQ4459 combines advanced trench mosfet technol ogy with a low resistance package to provide extremely low r ds(on) . this device is id eal for load switch and battery protection applications ap plic a tions z battery switch z load s witch marking q4459= device code solid dot=pin1 indicator solid dot = green molding compound device, if none, the normal device front side yy=date code maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -6.5 a pulsed drain current i dm -26 a single pulsed avalanche e n ergy e as (1) 14 mj power dissip a tion p d 1.4 w thermal resistance from junction to ambien t r ja 89 /w junction temperature t j 150 storage temperature rang e t stg -55 ~+150 lead temperature for soldering purp oses( 1/8?? from case for 10s) t l 260 (1).e as condition: v dd =-50v,l=0 .1 mh, r g =25 ? , starting t j = 25c 12 3 4 5678 sg dd d d s s 1 d mar 6 equivalent circuit v (br)dss r ds(on) max i d - 30v - 6 . 5 a 46 m @ -10v ? 72 m @ - 4.5 v ?
parameter symbol te s t condition min typ max unit off characteristics drain-source br eakd own voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate voltage dra i n current i dss v ds =-30v, v gs =0v -1 a gate-body leakage current i gss v ds =0v, v gs =20v 100 na on characteristics (n o te1) gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -1.4 -2.0 -2.4 v v gs =-10v, i d =-6.5a 26 46 m ? static drain-source on-sate re sistance r ds(on) v gs =-4.5v, i d =-5a 46 72 m ? forwa r d transconductance g fs v ds =-5v, i d =-6.5a 6 s dynamic ch a racteristics (note 2) input capacitance c iss 415 625 output capacitance c oss 70 130 reverse transfer capacitance c rss v ds =-15v,v gs =0v, f =1mhz 40 90 pf switching ch a racteristics (note 2) total gate charge q g 7.4 11 gate-source charge q gs 1.3 1.9 gate-drain charge q gd v ds =-15v, v gs =-10v, i d =-6.5a 1.3 3.1 nc turn-on delay t i me t d (on) 7.5 turn-on rise time t r 5.5 turn-off delay ti me t d(off) 19 turn-off fall time t f v dd =-15v,i d =-1a, v gs =-10v,r g =3 ?, r l =2.5 ? 7 ns gate resistance r g f =1mhz, v ds =0v, v gs =0v, 3.5 7.5 11.5 ? drain-sour ce dio de characteristics drain-source diode for w ard voltage(note1) v sd v gs =0v, i s =-1a -1 v continuous drain-so urce di ode forward current i s -6.5 a pulsed drain-source d i ode forward current i sm -26 a notes: 1. pulse test : pulse w i dth 300s, duty cycle 2%. 2. guaranteed by design, not subject to production. a t =25 / unless otherwise specified 2 dmar6
-0 -1 -2 -3 -4 -5 -6 -0 -4 -8 -12 -16 -20 -24 -2 -4 -6 -8 -10 20 40 60 80 100 -4 -8 -12 -16 -20 0 20 40 60 80 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 -0.4 -0.6 -0.8 -1 .0 -1 .2 -0.1 -1 -10 25 50 75 100 125 -1.8 -1.9 -2.0 -2 .1 -6.0v -8.0v -4.5v -4.0v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =-3.5v gate to source voltage v gs (v) on-r esist ance r ds(on) (m ? ) i d = -6.5a t a =25 pulsed v gs ?? r ds(on) t a =25 pulsed v gs = -10v v gs = -4.5v on-r esist ance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) outp u t characteristics drain current i d (a) gate to source voltage v gs (v) v ds = -5v pulsed t a =100 t a =25 transf er c haracteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? threshold volt ag e v th (v) ambient te m perature t a ( ) i d = -250ua thres hol d voltage 7 \ s l f d o & k d u d f w h u l v w l f v 3 dmar6
www.cj-elec.com 4 d , ma r ,2016 sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069
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