lg 4d08120e silicon carbide schottky diode features ? 1.2kv schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? solar inverters ? ups ? motor drives ? power factor correction package to-252-2 part number package marking lg 4d08120e to-252-2 lg 4d08120 e pin 1 pin 2 case maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v dc dc blocking voltage 1200 v i f continuous forward current 24.5 12 8 a t c =25?c t c =135?c t c =155?c i frm repetitive peak forward surge current 38 26 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 64 50 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 600 480 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation 137 59 w t c =25?c t c =110?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c v rrm = 1200 v i f ( t c =135?c) = 12 a q c = 37 nc ht t p : // ww w.lgesem i .c o m mail:l ge@lgesemi.com revision:201 70701 -p1
electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.2 1.8 3 v i f = 2 a t j =25c i f = 2 a t j =175c i r reverse current 35 100 250 350 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 37 nc v r = 800 v, i f = 2a d i /d t = 200 a/ s t j = 25c c total capacitance 560 37 27 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc to-252 package thermal resistance from junction to case 1.1 c/w typical performance figure 1. forward characteristics 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 0.5 1 1.5 2 2.5 3 3.5 4 4 . 5 figure 2. reverse characteristics 0 50 100 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 1200 1400 1600 1800 i f (a) v f (v) i r (a) v r (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c lg 4d08120e silicon carbide schottky diode ht t p : // ww w.lgesem i .c o m mail:l ge@lgesemi.com revision:201 70701 -p1
figure 3. current derating 40 50 60 70 80 0 10 20 30 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 175 typical performance 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 100 200 300 400 500 600 0.1 1 10 100 1000 figure 4. power derating figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage i f(peak) (a) t c ?c p tot (w) t c ?c c (pf) v r (v) 0 5 10 15 20 25 30 35 40 45 50 0 200 400 600 800 1000 v r (v) qrr (nc) lg 4d08120e silicon carbide schottky diode ht t p : // ww w.lgesem i .c o m mail:l ge@lgesemi.com revision:201 70701 -p1
0.0001 0.001 0.01 0.1 1 10 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100 e - 3 1 10 figure 7. transient thermal impedance thermal resistance (?c/w) t (sec) diode model v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) v ft = v t +if*r t v t = 0.96 + (t j * -2.1*10 -3 ) r t = 0.06+(t j * 8.0*10 -4 ) note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c lg 4d08120e silicon carbide schottky diode ht t p : // ww w.lgesem i .c o m mail:l ge@lgesemi.com revision:201 70701 -p1
recommended solder pad layout part number package marking to-252-2 c4d05120 to-252-2 . 08 pos inches millimeters min max min max a .250 .289 6.350 7.341 b .197 .215 5.004 5.461 c .027 .050 .686 1.270 d* .270 .322 6.858 8.179 e .178 .182 4.521 4.623 f .025 .045 .635 1.143 g 44? 46? 44? 46? h .380 .410 9.652 10.414 j .090 typ 2.286 typ k 6? 8? 6? 8? l .086 .094 2.184 2.388 m .018 .034 .457 .864 n .035 .050 .889 1.270 p .231 .246 5.867 6.248 q 0.00 .005 0.00 .127 r r0.010 typ r0.254 typ s .017 .023 .432 .584 t .038 .045 .965 1.143 u .021 .029 .533 .737 package dimensions package to-252-2 note: * tab d may not be present * lg 4d08120e silicon carbide schottky diode ht t p : // ww w.lgesem i .c o m mail:l ge@lgesemi.com revision:201 70701 -p1 lg 4d08120e
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