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this is information on a product in full production. february 2014 docid024403 rev 3 1/17 17 stgw60h60dlfb STGWT60H60DLFB trench gate field-stop igbt, hb series 600 v, 60 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.6 v (typ.) @ i c = 60 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? low v f soft recovery co-packaged diode ? lead free package applications ? induction heating ? microwave oven ? resonant converters description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. the device is part of the new "hb" series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 to-3p 1 2 3 1 2 3 tab c (2 or tab) g (1) e (3) table 1. device summary order code marking package packaging stgw60h60dlfb gw60h60dlfb to-247 tube STGWT60H60DLFB gwt60h60dlfb to-3p tube www.st.com
contents stgw60h60dlfb, STGWT60H60DLFB 2/17 docid024403 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid024403 rev 3 3/17 stgw60h60dlfb, STGWT60H60DLFB electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 80 (1) 1. current level is limited by bond wires a i c continuous collector current at t c = 100 c 60 a i cp (2) 2. pulse width limited by ma ximum junction temperature pulsed collector current 240 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 (1) a i f continuous forward current at t c = 100 c 60 a i fp (2) pulsed forward current 240 a p tot total dissipation at t c = 25 c 375 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 1.47 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgw60h60dlfb, STGWT60H60DLFB 4/17 docid024403 rev 3 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.6 2 v v ge = 15 v, i c = 60 a t j = 125 c 1.75 v ge = 15 v, i c = 60 a t j = 175 c 1.85 v f forward on-voltage i f = 60 a 1.8 2.1 v i f = 60 a t j = 125 c 1.55 i f = 60 a t j = 175 c 1.5 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -7792- pf c oes output capacitance - 262 - pf c res reverse transfer capacitance -158-pf q g total gate charge v cc = 480 v, i c = 60 a, v ge = 15 v, see figure 27 -306-nc q ge gate-emitter charge - 126 - nc q gc gate-collector charge - 58 - nc
docid024403 rev 3 5/17 stgw60h60dlfb, STGWT60H60DLFB electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v ce = 400 v, i c = 60 a, r g = 5 , v ge = 15 v, see figure 25 160 ns t f current fall time - 18 - ns e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses - 626 - j t d(off) turn-off delay time v ce = 400 v, i c = 60 a, r g = 5 , v ge = 15 v, t j = 175 c, see figure 25 184 ns t f current fall time - 117 - ns e off (1) turn-off switching losses - 1017 - j table 7. igbt switching characteristics (capacitive load) symbol parameter test conditions min. typ. max. unit e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses v cc = 320 v, r g = 10 , i c = 60 a, l = 100 h, c snub = 20 nf, see figure 26 -450- j v cc = 320 v, r g = 10 , i c = 60 a, l = 100 h, c snub = 20 nf, t j = 175 c, see figure 26 -785-
electrical characteristics stgw60h60dlfb, STGWT60H60DLFB 6/17 docid024403 rev 3 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) p tot 150 100 50 0 025 t c ( c ) (w) 100 200 50 75 250 175 125 150 300 350 gipd021020131435fsr i c 30 20 10 0 025 t c ( c ) (a) 100 40 50 75 50 60 70 175 v ge 15v, t j 175 c 125 150 80 gipd021020131439fsr i c 100 50 0 0 1 v ce (v) (a) 4 150 2 3 200 v ge =15v 9v 11v gipd021020131443fsr i c 150 100 50 0 0 1 v ce (v) (a) 4 200 2 3 v ge =15v 7v 11v 9v gipd021020131448fsr figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current c v ce(sat) 1.8 1.6 1.4 1.2 -50 t j ( c ) (v) 100 2 050 2.2 150 2.4 2.6 v ge = 15v i c = 120a i c = 60a i c = 30a gipd021020131457fsr v ce(sat) 1.6 1.4 1.2 1.0 0 i c ( a ) (v) 60 1.8 20 40 2 80 2.2 v ge = 15v t j = -40 c t j = 25 c t j = 175 c 2.4 0.8 100 120 gipd021020131500fsr
docid024403 rev 3 7/17 stgw60h60dlfb, STGWT60H60DLFB electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area i c 60 40 20 0 1 f( khz ) (a) 80 10 100 rectangular current shape (duty cycle= 0.5, v cc = 400v, r g =4.7, v ge = 0/15 v, t j = 175 c) t c = 80c t c = 100c 120 gipd021020131506fsr c = 25c, i c 100 10 1 0.1 1 v ce ( v ) (a) 10 10 s 100 s 1 ms single pulse tc= 25c, t j <= 175c v ge = 15v 100 gipd021020131512fsr figure 10. transfer characteristics figure 11. diode v f vs. forward current i c 150 100 50 0 7 v ge (v) (a) 13 200 9 11 t j =175c -40c 25c v ce =10v gipd021020131522fsr j v f 2 1.6 1.2 0.8 20 i f ( a ) (v) 2.4 40 t j = 175c 60 80 100 120 t j = 25c t j = -40c gipd021020131534fsr figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature v ge(th) 1.1 1.0 0.6 -50 t j ( c ) (norm) 0 50 100 150 i c = 1ma v ce = v ge 0.7 0.8 0.9 gipd021020131540fsr v (br)ces 1.1 1.0 0.9 -50 t j ( c ) (norm) 0 50 100 150 i c = 2ma gipd021020131546fsr
electrical characteristics stgw60h60dlfb, STGWT60H60DLFB 8/17 docid024403 rev 3 figure 14. capacitance variation figure 15. gate charge vs. gate-emitter voltage c 10 v ce (v) (pf) 0.1 1 10 c ies 100 1000 10000 c oes c res gipd021020131619fsr v ge 16 8 0 q g (n c ) (v) 0 100 i c = 60a i ge = 1ma v cc = 520v 2 4 6 200 10 12 14 300 gipd021020131623fsr figure 16. switching-off loss vs collector current figure 17. switching-off loss vs gate resistance e 0 i c (a) (j) 02040 500 1000 1500 60 80 2000 2500 e off 3000 v cc = 400v, v ge = 15v, r g = 10, t j = 175c 100 120 gipd021020131627fsr e 500 r g () (j) 2610 1000 1500 2000 14 18 22 e off v cc = 400 v, v ge = 15 v, i c = 60 a, t j = 175 c gipd021020131631fsr figure 18. switching-off loss vs temperature figure 19. switching-off loss vs collector- emitter voltage e 800 t j ( c ) (j) 25 50 75 900 1000 1100 100 150 e off v cc = 400v, v ge = 15v, r g = 10, i c = 60a 2100 1100 125 gipd021020131634fsr e 500 v ce ( v ) (j) 100 200 300 800 1100 1400 400 e off t j = 175c, v ge = 15v, r g = 10, i c = 60a 500 1700 gipd041020131010fsr
docid024403 rev 3 9/17 stgw60h60dlfb, STGWT60H60DLFB electrical characteristics figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance t 1 i c ( a ) (ns) 04080 100 120 t f t j = 175c, v ge = 15v, r g = 10, v cc = 400v t doff 10 160 gipd021020131641fsr t 10 r g ( ) (ns) 2610 100 14 t f t j = 175c, v ge = 15v, i c = 60a, v cc = 400v t doff 18 22 gipd021020131653fsr figure 22. switching-off losses vs. capacitive load e 100 c snub ( nf ) (j) 02040 600 60 r g = 10, v ge = 15v, i c = 60a, v cc = 320v, l snub = 0.1mh 80 100 t j = 175c t j = 25c 200 300 400 500 700 800 900 gipd021020131657fsr
electrical characteristics stgw60h60dlfb, STGWT60H60DLFB 10/17 docid024403 rev 3 figure 23. thermal impedance for igbt figure 24. thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid024403 rev 3 11/17 stgw60h60dlfb, STGWT60H60DLFB test circuits 3 test circuits figure 25. test circuit for inductive load switching figure 26. test circuit for capacitive load switching figure 27. gate charge test circuit figure 28. switching waveform figure 29. diode recovery time waveform am01504v1 am17096v1 csnub am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data stgw60h60dlfb, STGWT60H60DLFB 12/17 docid024403 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. figure 30. to-247 drawing 0075325_g
docid024403 rev 3 13/17 stgw60h60dlfb, STGWT60H60DLFB package mechanical data table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stgw60h60dlfb, STGWT60H60DLFB 14/17 docid024403 rev 3 figure 31. to-3p drawing 8045950_a
docid024403 rev 3 15/17 stgw60h60dlfb, STGWT60H60DLFB package mechanical data table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
revision history stgw60h60dlfb, STGWT60H60DLFB 16/17 docid024403 rev 3 5 revision history table 10. document revision history date revision changes 10-apr-2013 1 initial release. 04-oct-2013 2 document status changed from preliminary to production data. added section 2.1: electrical characteristics (curves) . minor text changes. 24-feb-2014 3 updated title and description in cover page.
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