1/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b 4v drive pch+pch mosfet sh8j65 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit packagecode taping basic ordering unit (pieces) sh8j65 tb 2500 type ? absolute maximum ratings (ta=25 ? c) ? 1 ? 2 ? 1 parameter v v dss symbol 30 v v gss 20 a i d 7.0 a i dp 28 a i s 1.6 a i sp 28 w / total p d 2.0 w / element 1.4 c tch 150 c tstg 55 to + 150 limits unit drain-source voltagegate-source voltage drain current source current (body diode) total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board each lead has same dimensions sop8 (1) tr1 source(2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) downloaded from: http:///
2/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. 10 av gs = 20v, v ds = 0v v dd 15v typ. max. unit conditions gate-source leakage v (br) dss 30 vi d = 1ma, v gs = 0v drain-source breakdown voltage i dss 1 av ds = 30v, v gs = 0v zero gate voltage drain current v gs (th) 1.0 2.5 v v ds = 10v, i d = 1ma gate threshold voltage 21.5 29.0 i d = 7a, v gs = 10v static drain-source on-stateresistance r ds (on) 29.0 39.0 m m m i d = 3.5a, v gs = 4.5v forward transfer admittance 31.0 40.8 i d = 3.5a, v gs = 4.0v input capacitance 6.0 sv ds = 10v, i d = 7a output capacitance c iss 1200 pf v ds = 10v reverse transfer capacitance c oss 170170 pf v gs = 0v turn-on delay time c rss 12 pf f = 1mhz rise time t d (on) 40 ns turn-off delay time t r 80 ns fall time t d (off) 65 ns t f 18 ns q g 3.5 nc q gs 6.5 nc v gs = 5v r l = 2.1 / r g = 10 q gd nc i d = 7a ? pulsed ?? ?? ? ?? ? ? ? ? ? total gate chargegate-source charge gate-drain charge v dd 15 v i d = 3.5a v gs = 10v r l = 4.3 r g = 10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd 1.2 v i s = 7a, v gs = 0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ? downloaded from: http:///
3/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 ? electrical characteristic curves 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 v gs = -2.5v ta=25c pulsed v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -3.5v v gs = -3.0v 0.01 0.1 1 10 1.0 1.5 2.0 2.5 3.0 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 1 10 100 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = -10v ta=25c pulsed 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 2 4 6 8 10 12 14 16 18 20 024681 0 v gs = -2.2v v gs = -2.5v ta=25c pulsed v gs = -10v v gs = -4.0v v gs = -3.0v 1 10 100 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 1 10 100 0.1 1 10 v gs = -10v pulsed ta=125c ta=75c ta=25c ta= -25c 0 1 10 100 0.1 1.0 10.0 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 1 10 100 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : - i d [a] drain current : - i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v] downloaded from: http:///
4/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 10 20 30 40 50 60 70 80 90 100 051 01 5 ta=25c pulsed i d = -3.5a i d = -7.0a 0 2 4 6 8 10 0 1 0 2 03 04 0 ta=25c v dd = -15v i d = -7.0a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms t a = 25c single pulse mo unt ed o n serami c bo ard dc operat ion operation in this area is limited by r ds(on) (v gs =-10v) p w = 100us p w =1ms 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width : pw(s) normarized transient therma l resistance : r (t) ta = 25c single pulse : 1unit rth(c h-a)(t) = r(t)rth(c h-a) rth(c h-a) = 89.3 c/w 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d (on) t d (off) ta= 25c v dd = -15v v gs =-10v r g =10 ? pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig .12 dynamic input characteristics fig .13 typical capacitance vs. drain-source voltage fig .11 switching c har acter istics fig.14 maximum safe operating aera fig .15 nor malized tr ansient ther mal resistance vs. pulse width static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] gate-source voltage : -v ds [v] capacitance : c [pf] drain-source voltage : -v ds [v] drain current : -i d (a) downloaded from: http:///
5/5 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.10 - rev.b data sheet sh8j65 ? measurement circuits fig.16 switching time test circuit v gs r g v ds d.u.t. i d r l v dd fig.17 switching time waveforms 90% 90% 90% 10% 10% 10% 50% 50% v gs v ds t on t off t r t d(on) t f t d(off) pulse width fig.18 gate charge test circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.19 gate charge waveform v g v gs charge q g q gs q gd downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, i s permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement witho ut notice. the content specied herein is for the purpose of introducing rohm's produ cts (hereinafter "products"). if you wish to use any such product, please be sure to refer to the spec ications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the periph eral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information spec ied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typica l functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispu te arising from the use of such technical information. the products specied in this document are intended to be used with general-us e electronic equipment or devices (such as audio visual equipment, ofce-automati on equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation toler ant. while rohm always makes efforts to enhance the quality and reliability of its pr oducts, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the produ cts safety measures to guard against the possibility of physical injury, re or any other damage cause d in the event of the failure of any product, such as derating, redundancy, re control and fai l-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of th e prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medic al instrument, transportation equipment, aerospace machinery, nu clear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsi bility in any way for use of any of the products for the above special purposes. if a product is intended to be used for an y such special purpose, please contact a rohm sales representative befor e purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be req uired to obtain a license or permit under the law. downloaded from: http:///
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