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r07ds1258ej0100 rev.1.00 page 1 of 7 jun 23, 2015 data sheet RJF0411JPD 40v, 34a silicon n channel thermal fet power switching description this fet has the over temperature shut-down capability sensing to the junction temperature. this fet has the built-in over temperature shut-down circuit in the gate area. and this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. features ? logic level operation. ? built-in the over temperat ure shut-down circuit. ? high endurance capability against to the short circuit. ? latch type shut down operation (need 0 voltage recovery). ? built-in the current limitation circuit. ? power supply voltage applies 12 v. ? aec-q101 compliant. ? endurance capability against to esd. outline absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 40 v gate to source voltage v gss 16 v gate to source voltage v gss ?2.5 v drain current i d note3 34 a body-drain diode reverse drain current i dr 34 a avalanche current i ap note 2 5 a avalanche energy e ar note 2 166 mj channel dissipation pch note 1 40 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. value at tc = 25 ?c 2. tch = 25 ?c, rg ? 50 ? 3. it provides by the current limitation lower bound value. renesas package code: prss0004zd-c (package name: dpak (s) ) 1 2 3 4 d s g gate resistor temperature sensing circuit latch circuit gate shut-down circuit current limitation circuit 1. gate 2. drain 3. source 4. drain r07ds1258ej0100 rev.1.00 jun 23, 2015
RJF0411JPD r07ds1258ej0100 rev.1.00 page 2 of 7 jun 23, 2015 typical operation characteristics (ta = 25c) item symbol min typ max unit test conditions input voltage v ih 3.5 ? ? v v il ? ? 1.2 v input current (gate non shut down) i ih1 ? ? 100 ? a vi = 8 v, v ds = 0 i ih2 ? ? 50 ? a vi = 3.5 v, v ds = 0 i il ? ? 1 ? a vi = 1.2 v, v ds = 0 input current (gate shut down) i ih(sd)1 ? 0.8 ? ma vi = 8 v, v ds = 0 i ih(sd)2 ? 0.35 ? ma vi = 3.5 v, v ds = 0 shut down temperature tsd ? 175 ? ? c channel temperature gate operation voltage vop 3.5 ? 12 v drain current (current limitation value) i d limt 34 ? ? a v gs = 5 v, v ds = 10 v note 4 tc 80 ?c note: 4. pulse test electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain current i d1 ? ? 40 a v gs = 3.5 v, v ds = 10 v note 5 i d2 ? ? 10 ma v gs = 1.2 v, v ds = 10 v i d3 34 ? ? a v gs = 5 v, v ds = 10 v note 5 tc 80 ?c i d4 34 ? ? a v gs = 4.5 v, v ds = 10 v note 5 tc 80 ?c drain to source breakdown voltage v (br)dss 40 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 16 ? ? v i g = 800 ? a, v ds = 0 v (br)gss ?2.5 ? ? v i g = ?100 ? a, v ds = 0 gate to source leak current i gss1 ? ? 100 ? a v gs = 8 v, v ds = 0 i gss2 ? ? 50 ? a v gs = 3.5 v, v ds = 0 i gss3 ? ? 1 ? a v gs = 1.2 v, v ds = 0 i gss4 ? ? ?100 ? a v gs = ?2.4 v, v ds = 0 input current (shut down) i gs(op)1 ? 0.8 ? ma v gs = 8 v, v ds = 0 i gs(op)2 ? 0.35 ? ma v gs = 3.5 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 ? a v ds = 32 v, v gs = 0, tc = 110 ?c gate to source cutoff voltage v gs(off) 1.1 ? 2.1 v v ds = 10 v, i d = 1 ma forward transfer admittance |y fs | 12 21.9 ? s i d = 15 a, v ds = 10 v note 5 static drain to source on state resistance r ds(on) ? 29.9 43 m ? i d = 15 a, v gs = 5 v note 5 r ds(on) ? 23.8 37 m ? i d = 15 a, v gs = 10 v note 5 output capacitance coss ? 416 ? pf v ds = 10 v, v gs = 0, f = 1mhz turn-on delay time t d(on) ? 3 ? ? s v gs = 10 v, i d = 15 a, r l = 2 ? rise time t r ? 12.8 ? ? s turn-off delay time t d(off) ? 4 ? ? s fall time t f ? 9.9 ? ? s body-drain diode forward voltage v df ? 0.96 ? v i f = 30 a, v gs = 0 body-drain diode reverse recovery time t rr ? 109 ? ns i f = 30 a, v gs = 0 di f /dt = 50 a/? s over load shut down operation time note 6 t os1 ? 0.26 ? ms v gs = 5 v, v dd = 16 v notes: 5. pulse test 6. including the junction temperature rise of the over loaded condition. RJF0411JPD r07ds1258ej0100 rev.1.00 page 3 of 7 jun 23, 2015 main characteristics 50 40 30 20 10 0 0 50 100 150 200 1000 100 10 1 0.1 0.01 0.1 1 10 100 50 40 30 20 10 0 2 04681 0 v gs = 3.5 v 6 v 4 v 5 v 4.5 v channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 800 400 500 600 700 300 200 100 0 2 046810 100 0.1 1 10 100 10 1 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds (on) (mv) drain current i d (a) drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. drain current v gs = 5 v 10 v 10 v 5 a 10 a i d = 15 a 0 0 12345 30 20 10 v ds = 10 v pulse test tc = C 40 c 25c dc operation (tc = 25 c) ta = 2 5 c pw = 10 ms 1 ms 8 v thermal shut down operation area operation in this area is limited by r ds (on) pulse test pulse test pulse test RJF0411JPD r07ds1258ej0100 rev.1.00 page 4 of 7 jun 23, 2015 70 60 50 C50 C25 0 25 75 100 50 150 125 case temperature tc (c) 0 20 40 10 30 static drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) forward transfer admittance vs. drain current drain current i d (a) reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time 1 10 100 1000 10 100 1 010203040 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 10000 3000 1000 300 100 30 10 20 25 30 0 source to drain voltage v sd (v) reverse drain current i dr (a) 0 5 10 15 reverse drain current vs. source to drain voltage 0.4 0.8 1.2 1.6 2.0 100 10 1 1 10 100 0.1 drain current i d (a) switching time t ( s) switching characteristics 0 v v gs = 10 v, v dd = 30 v pw = 300 s, duty 1 % dif / dt = 50 a / s v gs = 0, ta = 25c v gs = 5 v 10 v i d = 15 a 5 a, 10 a i d = 5 a, 10 a, 15 a t f t r t d(off) t d(on) coss v gs = 0 f = 1 mhz 100 10 1 0.1 0.1 1 100 10 25c v ds = 10 v pulse test tc = C 40c v gs = 5 v pulse test pulse test RJF0411JPD r07ds1258ej0100 rev.1.00 page 5 of 7 jun 23, 2015 200 180 160 140 120 0 gate to source voltage v gs (v) shutdown case temperature tc ( c) 100 246810 i d = 0.5 a shutdown case temperature vs. gate to source voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch - c(t) = s (t) ch - c ch - c = 3.125c / w, tc = 25c tc = 2 5 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 10 8 4 2 6 0 gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test 0.1 1 shutdown time of load-short test pw (ms) v dd = 16 v RJF0411JPD r07ds1258ej0100 rev.1.00 page 6 of 7 jun 23, 2015 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit waveform vin monitor d.u.t. vin 10 v 50 r l vout monitor v dd = 30 v d. u. t rg i ap monitor v ds monitor v dd 50 vin 10 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v (br)dss v (br)dss C v dd avalanche test circuit avalanche waveform RJF0411JPD r07ds1258ej0100 rev.1.00 page 7 of 7 jun 23, 2015 package dimensions ordering information orderable part number quan tity shipping container RJF0411JPD-00-j3 3000 pcs taping note: the symbol of 2nd "-" is occasionally presented as "#". 6.5 0.3 5.6 0.5 2.3 0.2 0.55 0.1 0 ? 0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 (1.2) 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) 1.0 max. previous code prss0004zd-c dpak(s) / dpak(s)v mass[typ.] 0.28g sc-63 renesas code jeita package code unit: mm package name dpak(s) notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operati on of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rig hts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". th e recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. 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