? semiconductor components industries, llc, 1994 october, 2016 ? rev. 10 1 publication order number: mmbta05lt1/d mmbta05l, MMBTA06L driver transistors npn silicon features ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage mmbta05l MMBTA06L v ceo 60 80 vdc collector ?base voltage mmbta05l MMBTA06L v cbo 60 80 vdc emitter ?base voltage v ebo 4.0 vdc collector current ? continuous i c 500 madc electrostatic discharge esd hbm class 3b mm class c cdm class iv stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. sot?23 case 318 style 6 2 3 1 marking diagrams 1h m mmbta05lt1 collector 3 1 base 2 emitter 1gm m MMBTA06Lt1, sMMBTA06L 1h, 1gm = specific device code m = date code* = pb?free package see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. www. onsemi.com
mmbta05l, MMBTA06L www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) mmbta05l MMBTA06L v (br)ceo 60 80 ? ? vdc emitter ?base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ces ? 0.1 adc collector cutoff current (v cb = 60 vdc, i e = 0) mmbta05l (v cb = 80 vdc, i e = 0) MMBTA06L i cbo ? ? 0.1 0.1 adc on characteristics dc current gain (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 100 100 ? ? ? collector ?emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.25 vdc base ?emitter on voltage (i c = 100 madc, v ce = 1.0 vdc) v be(on) ? 1.2 vdc small? signal characteristics current ?gain ? bandwidth product (note 4) (i c = 10 ma, v ce = 2.0 v, f = 100 mhz) f t 100 ? mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn-on time -1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn-off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities
mmbta05l, MMBTA06L www. onsemi.com 3 figure 2. current gain bandwidth product vs. collector current figure 3. capacitance figure 4. switching time i c , collector current (ma) v r , reverse voltage (v) v ce = 2.0 v t a = 25 c t a = 25 c c ibo c obo 20 10 i c , collector current (ma) 200 100 50 20 10 100 t, time (ns) 50 200 500 1.0 k 500 v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r 5.0 7.0 30 70 300 700 30 70 t d @ v be(off) = 0.5 v c, capacitance (pf) 300 figure 5. dc current gain vs. collector current i c , collector current (ma) t a = 150 c v ce = 1.0 v f tau , current gain bandwidth product (mhz) 1000 100 10 1 10 100 1000 0.1 1 10 100 100 10 1 t a = 25 c t a = ?55 c h fe , dc current gain 0.1 1 10 100 1000 1000 100 10 figure 6. collector emitter saturation voltage vs. collector current figure 7. base emitter saturation voltage vs. collector current i c , collector current (ma) i c , collector current (ma) 0.01 0.1 1 1 0.1 0.2 0.3 0.4 0.6 0.7 0.8 1.0 1.1 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) i c /i b = 10 0.5 0.9 i c /i b = 10 t a = 150 c t a = 25 c t a = ?55 c 1.2 10 100 1000 t a = 150 c t a = 25 c t a = ?55 c 1 0.1 10 100 1000
mmbta05l, MMBTA06L www. onsemi.com 4 figure 8. base emitter turn?on voltage vs. collector current i c , collector current (ma) 1.1 v be(on) , base?emitter voltage (v) v ce = 1 v figure 9. saturation region i b , base current (ma) t a = 25 c i c = 100 ma i c = 50 ma i c = 250 ma i c = 500 ma i c = 10 ma figure 10. base?emitter temperature coefficient 100 500 0.5 i c , collector current (ma) ?0.8 ?1.2 ?1.6 ?2.0 ?2.4 ?2.8 10 r vb for v be 1.0 2.0 5.0 20 50 200 figure 11. safe operating area v ce , collector emitter voltage (v) 100 10 1 0.1 10000 i c , collector current (ma) thermal limit 100 ms 1 s 10 ms 1 ms t a = 150 c t a = 25 c t a = ?55 c 1 0.1 10 100 1000 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 0.1 10 100 0.01 1.0 0.8 0.6 0.4 0.2 0 v ce(sat) , collector?emitter saturation voltage (v) r vb , temperature coefficient (mv/ c) single pulse at t a = 25 c MMBTA06L figure 12. safe operating area v ce , collector emitter voltage (v) 100 10 1 0.1 10000 i c , collector current (ma) 1000 100 10 1 1000 100 10 1 thermal limit 100 ms 1 s 10 ms 1 ms single pulse at t a = 25 c mmbta05l
mmbta05l, MMBTA06L www. onsemi.com 5 ordering information device package shipping ? mmbta05lt1g sot?23 (pb?free) 3,000 / tape & reel nsvmmbta05lt1g* sot?23 (pb?free) 3,000 / tape & reel mmbta05lt3g sot?23 (pb?free) 10,000 / tape & reel MMBTA06Lt1g sot?23 (pb?free) 3,000 / tape & reel sMMBTA06Lt1g* sot?23 (pb?free) 3,000 / tape & reel MMBTA06Lt3g sot?23 (pb?free) 10,000 / tape & reel sMMBTA06Lt3g* sot?23 (pb?free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualifi ed and ppap capable.
mmbta05l, MMBTA06L www. onsemi.com 6 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbta05lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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