View IPN65R1K5CE_8760864.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 IPN65R1K5CE rev.2.0,2016-04-29 final data sheet pg-sot223 mosfet 650vcoolmosacepowertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforstandardgradeapplications applications adapter,chargerandlighting pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 700 v r ds(on),max 1.5 w q g,typ 10.5 nc i d,pulse 9.2 a e oss @400v 1.2 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks IPN65R1K5CE pg-sot223 65s1k5 see appendix a d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
2 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 5.2 3.3 a t c = 25c t c = 100c pulsed drain current 2) i d,pulse - - 9.2 a t c = 25c avalanche energy, single pulse e as - - 26 mj i d = 0.6a; v dd = 50v avalanche energy, repetitive e ar - - 0.10 mj i d = 0.6a; v dd = 50v avalanche current, repetitive i ar - - 0.6 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation p tot - - 5.0 w t c =25c operating and storage temperature t j , t stg -40 - 150 c - continuous diode forward current i s - - 1.2 a t c =25c diode pulse current 2) i s,pulse - - 9.2 a t c = 25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c maximum diode commutation speed 3) di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - solder point r thjs - - 23.8 c/w - thermal resistance, junction - ambient for minimal footprint r thja - - 160 c/w minimal footprint thermal resistance, junction - ambient soldered on copper area r thja - - 75 c/w device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer 70 m m thick) copper area for drain connection and cooling. pcb is vertical without blown air. soldering temperature, wavesoldering only allowed at leads t sold - - 260 c reflow msl3 1) dpak equivalent. limited by t j max . maximum duty cycle d=0.5 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 650 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.50 3 3.50 v v ds = v gs , i d =0.1ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =650v, v gs =0v, t j =25c v ds =650v, v gs =0v, t j =150c gate-source leakage curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.35 3.51 1.50 - w v gs =10v, i d =1a, t j =25c v gs =10v, i d =1a, t j =150c gate resistance r g - 6.5 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 225 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 15 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 10 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 42 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 7.7 - ns v dd =400v, v gs =13v, i d =1.5a, r g =10.2 w rise time t r - 5.9 - ns v dd =400v, v gs =13v, i d =1.5a, r g =10.2 w turn-off delay time t d(off) - 33 - ns v dd =400v, v gs =13v, i d =1.5a, r g =10.2 w fall time t f - 18.2 - ns v dd =400v, v gs =13v, i d =1.5a, r g =10.2 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1.3 - nc v dd =480v, i d =1.5a, v gs =0to10v gate to drain charge q gd - 5.8 - nc v dd =480v, i d =1.5a, v gs =0to10v gate charge total q g - 10.5 - nc v dd =480v, i d =1.5a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =480v, i d =1.5a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to480v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to480v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =1.5a, t f =25c reverse recovery time t rr - 200 - ns v r =400v, i f =1.5a,d i f /d t =100a/s reverse recovery charge q rr - 0.9 - c v r =400v, i f =1.5a,d i f /d t =100a/s peak reverse recovery current i rrm - 8 - a v r =400v, i f =1.5a,d i f /d t =100a/s d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 1 2 3 4 5 6 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 2 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 98% typ r ds(on) =f( t j ); i d =1.0a; v gs =10v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 480 v 120 v v gs =f( q gate ); i d =1.5apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 5 10 15 20 25 30 e as =f( t j ); i d =0.6a; v dd =50v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 550 570 590 610 630 650 670 690 710 730 750 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 600 700 10 -1 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 e oss = f (v ds ) d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
11 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet 6packageoutlines figure1outlinepg-sot223,dimensionsinmm/inches d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min 0.181 basic ? 0.130 0.264 0.060 0.116 0.009 0.248 0.024 7.30 6.70 0.80 0.32 3.10 0.10 1.80 0.091 basic 0.287 0.264 0.031 0.122 0.013 0.071 0.004 max inches min max 3.70 0.146 a2 1.70 0.067 0.75 1.10 0.030 ? ? - 3 3 1,50 0.059 0.043
12 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min 0.181 basic ? 0.130 0.264 0.060 0.116 0.009 0.248 0.024 7.30 6.70 0.80 0.32 3.10 0.10 1.80 0.091 basic 0.287 0.264 0.031 0.122 0.013 0.071 0.004 max inches min max 3.70 0.146 a2 1.70 0.067 0.75 1.10 0.030 ? ? - 3 3 1,50 0.059 0.043
13 650vcoolmosacepowertransistor IPN65R1K5CE rev.2.0,2016-04-29 final data sheet revisionhistory IPN65R1K5CE revision:2016-04-29,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-04-29 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min 0.181 basic ? 0.130 0.264 0.060 0.116 0.009 0.248 0.024 7.30 6.70 0.80 0.32 3.10 0.10 1.80 0.091 basic 0.287 0.264 0.031 0.122 0.013 0.071 0.004 max inches min max 3.70 0.146 a2 1.70 0.067 0.75 1.10 0.030 ? ? - 3 3 1,50 0.059 0.043

▲Up To Search▲

Price & Availability of IPN65R1K5CE

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPN65R1K5CEATMA1 97Y1836	Infineon Technologies AG	Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):1.35Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes \|Infineon IPN65R1K5CEATMA1		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPN65R1K5CE	Infineon Technologies AG			1813

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPN65R1K5CEATMA1	Infineon Technologies AG	IPN65R1K5 - Small Signal Field-Effect Transistor	1000: USD0.2215 500: USD0.2345 100: USD0.245 25: USD0.2554 1: USD0.2606	357

	To Download IPN65R1K5CE Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .