1/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a wemt6 abbreviated symbol : u42 (6) (5) (4) (1) (2) (3) (1)gate(2)source (3)anode (4)cathode (5)drain (6)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (6) (3) (4) (5) 2.5v drive pch+sbd mosfet es6u42 z structure z dimensions (unit : mm) silicon p-channel mosfet / schottky barrier diode z features 1) pch mosfet and schottky barrier diode are put in wemt6 package. 2) high-speed switching, low on-resistance. 3) low voltage drive (2.5v drive). 4) built-in low v f schottky barrier diode. z applications switching z package specifications z inner circuit packagecode taping basic ordering unit (pieces) es6u42 t2r 8000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp limits unit drain-source voltage gate-source voltagedrain current continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 20 1.0 4.0 0.4 4.0 c tch channel temperature 150 ? 2 p d power dissipation w / element 0.7 12 ? 1 parameter v v rm symbol v v r a i f a i fsm tj limits unit repetitive peak reverse voltage reverse voltageforward current ? 1 60hz 1cycle ? 2 mounted on a ceramic board forward current surge peakjunction temperature 2520 0.52.0 ? 2 power dissipation w / element p d 0.5 150 c ? parameter symbol w / total p d c tstg limits unit power dissipationrange of storage temperature ? mounted on a ceramic board 55 to + 150 0.8 sot-563t downloaded from: http:///
es6u42 data sheet 2/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltagezero gate voltage drain current gate threshold voltagestatic drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed 10 av gs = 12v, v ds =0v v dd 15v, v gs = 4.5v 20 vi d = 1ma, v gs =0v 1 av ds = 20v, v gs =0v 0.7 2.0 v v ds = 10v, i d = 1ma 280 390 i d = 1a, v gs = 4.5v 310 430 m ? m ? m ? i d = 1a, v gs = 4v 570 800 i d = 0.5a, v gs = 2.5v 0.7 sv ds = 10v, i d = 0.5a 150 pf v ds = 10v 2020 pf v gs = 0v 9 pf f= 1mhz 8 ns 25 ns 10 ns 2.1 ns 0.5 nc 0.5 nc i d = 1a, r l 15 ? nc v dd 15 v i d = 0.5a v gs = 4.5v r l 30 ? r g = 10 ? r g = 10 ? v sd 1.2 v i s = 1.0a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed v f 0.36 v i f = 0.1a forward voltage i r 100 a v r = 20v reverse current parameter symbol min. typ. max. unit conditions 0.52 v i f = 0.5a downloaded from: http:///
es6u42 data sheet 3/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z electrical characteristics curves 0.0 0.5 1.0 1.5 2.0 0.0 2.0 4.0 6.0 8.0 10.0 v gs = -2.0 v ta=25c pulsed v gs = -10v v gs = -4.0v v gs = -3.0v v gs = -2.2 v v gs = -2.4 v 0.0 0.5 1.0 1.5 2.0 0.0 0.2 0.4 0.6 0.8 1.0 v gs = -2.0 v ta=25c pulsed v gs = -10v v gs = -4.5 v v gs = -4.0 v v gs = -3.0 v v gs = -2.2 v v gs = -2.5 v 0.001 0.01 0.1 1 10 1.0 1.5 2.0 2.5 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.01 0.1 1 10 v gs = -2.5v v gs = -4.0v v gs = -4.5v ta=25c pulsed 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 100 1000 10000 0.01 0.1 1 10 v gs = -4v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.01 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 0 1 10 0.01 0.1 1 10 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 100 1000 10000 0.01 0.1 1 10 v gs = -2.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v] downloaded from: http:///
es6u42 data sheet 4/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a fig.1 reverse current vs. reverse voltage 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 reverse voltage : v r [v] reverse current: i r [ua] pulsed ta= - 25 ta = 25 ta = 75 fig.2 forward current vs. forward voltage 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 forward voltage : v f (v) forward current : i f (a) pulsed ta= - 25 ta = 25 ta = 75 100 200 300 400 500 600 700 800 900 1000 024681012 ta=25c pulsed i d = -0.5a i d = -1.0a 0 1 2 3 4 5 00 . 511 . 522 . 5 ta=25c v dd = -15v i d = -1.0a r g =10 ? pulsed 1 10 100 1000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d (on) t d (off) ta=25c v dd = -15v v gs =-4.5v r g =10 ? pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf] downloaded from: http:///
es6u42 data sheet 5/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z measurement circuit fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) tf t d(off) 10% 90 % 10% 90% f ig.2-1 gate charge measurement circu it v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge wavefor m v g v gs charge q g q gs q gd z notice 1. sbd has a large reverse leak current compared to other type of diode. therefore; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a therma l runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. downloaded from: http:///
appendix-rev4.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co.jp www.rohm.com copyright ? 2009 rohm co.,ltd. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when de signing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no re- sponsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exer cise intellectual property or other rights held by rohm and other parties. rohm shall bear no re- sponsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, elec- tronic ap pliances and amusement devices). the products are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possi bility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redundancy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which re quires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intend- ed to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law. downloaded from: http:///
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