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product structure silicon monolithic integrated circuit this product is not designed prot ection against radioactive rays 1/23 tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 14? 001 www.rohm.com datashee t wl-csp eeprom family br25s128guz-w (128k) general description br25s128guz-w is a 16k 8bit serial eeprom of spi bus interface method. features ? high speed clock action up to 10mhz (max.) ? wait function by holdb terminal ? part or whole of memory arrays settable as read only memory area by program ? 1.7v to 5.5v single power source action most suitable for battery use ? 64byte page write mode useful for initial value write at factory shipment ? for spi bus interface (cpol, cpha) = (0, 0), (1, 1) ? auto erase and auto end function at data rewrite ? low current consumption ? at write action (5v) : 1.5ma (typ.) ? at read action (5v) : 1.0ma (typ.) ? at standby action (5v) : 0.1 a (typ.) ? address auto increment function at read action ? write mistake prevention function ? write prohibition at power on ? write prohibition by command code (wrdi) ? write prohibition by wp pin ? write prohibition block setting by status registers (bp1, bp0) ? write mistake prevention function at low voltage ? data kept for 40 years ? data rewrite up to 1,000,000 times ? data at shipment memory array: ffh, status register wpen, bp1, bp0 : 0 package w(typ.) x d(typ.) x h(max.) page write page 64byte part number br25s128guz-w br25s128guz-w capacity bit format power source voltage vcsp35l2 128kbit 16k 8 1.7v to 5.5v v csp35l2 2.00mm x 2.63mm x 0.40mm
datasheet 2/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com absolute maximum ratings (ta=25 ) parameter symbol ratings unit remarks supply voltage v cc -0.3 to +6.5 v power dissipation pd 220 (vcsp35l2) mw degradation is done at 4.5mw, for operation above 25 . storage temperature tstg 65 to +125 operating temperature topr 40 to +85 terminal voltage \ -0.3 to vcc+0.3 * 1 v *1 the max value of terminal voltage is not over 6.5v. memory cell characteristics (ta=25c , vcc=1.7v to 5.5v) limits parameter min. typ. max. unit number of data rewrite times *1 1,000,000 - - times data hold years *1 40 - - years *1 not 100% tested recommended operating ratings parameter symbol ratings unit power source voltage vcc 1.7 to 5.5 input voltage v in 0 to vcc v input / output capacity (ta=25c, frequency=5mhz) parameter symbol min. max. unit conditions input capacity *1 c in 8 v in =gnd output capacity *1 c out 8 pf v out =gnd *1 not 100% tested. electrical characteristics (unless otherwise specified, ta=-40c to +85c, vcc=1.7v to 5.5v) limits parameter symbo l min. typ. max. unit conditions ?h? input voltage1 vih1 0.7xvcc vcc+0.3 v 1.7Q vcc Q 5.5v ?l? input voltage1 vil1 -0.3 0.3xvcc v 1.7Q vcc Q 5.5v ?l? output voltage1 vol1 0 0.4 v iol=2.1ma, 2.5 Q vcc<5.5v ?l? output voltage2 vol2 0 0.2 v iol=1.0ma, 1.7 Q vcc<2.5v ?h? output voltage1 voh1 vcc-0.2 vcc v ioh=-0.4ma, 2.5v Q vcc<5.5v ?h? output voltage2 voh2 vcc-0.2 vcc v ioh=-100 a, 1.7 Q vcc<2.5v input leakage current ili -1 1 a v in =0 to vcc output leakage current ilo -1 1 a v out =0 to vcc, csb=vcc icc1 0.5 ma vcc=1.8v,fsck=5mhz, te/w=5ms byte write page write icc2 1 ma vcc=2.5v,fsck=10mhz, te/w=5ms byte write page write operating current write icc3 2 ma vcc=5.5v,fsck=10mhz, te/w=5ms byte write page write icc4 1 ma vcc=1.8v,fsck=5mhz, so=open read, read status register icc5 1 ma vcc=2.5v,fsck=2mhz, so=open read, read status register icc6 1.5 ma vcc=2.5v,fsck=5mhz, so=open read, read status register icc7 2 ma vcc=2.5v,fsck=10mhz, so=open read, read status register icc8 2 ma vcc=5.5v,fsck=5mhz, so=open read, read status register icc9 4 ma vcc=5.5v,fsck=10mhz, so=open read, read status register operating current read icc10 8 ma vcc=5.5v,fsck=20mhz, so=open read, read status register standby current isb 2 a vcc=5.5v, csb=vcc, sck=si=vcc or gnd holdb=wp=vcc, so=open
datasheet 3/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com operating timing characteristics (ta=-40c to +85c, unless otherwise specified, load capacity c l =30pf) 1.7 Q vcc<2.5v 1.8 Q vcc<2.5v 2.5 QvccQ 5.5v parameter symbol min. typ. max. min. typ. max. min. typ. max. unit sck frequency f sck - - 3 - - 5 - - 10 mhz sck high time t sckwh 125 - - 80 - - 40 - - ns sck low time t sckwl 125 - - 80 - - 40 - - ns csb high time t cs 250 - - 90 - - 40 - - ns csb setup time t css 100 - - 60 - - 30 - - ns csb hold time t csh 100 - - 60 - - 30 - - ns sck setup time t scks 100 - - 50 - - 20 - - ns sck hold time t sckh 100 - - 50 - - 20 - - ns si setup time t dis 30 - - 20 - - 10 - - ns si hold time t dih 50 - - 20 - - 10 - - ns data output delay time t pd - - 125 - - 80 - - 40 ns output hold time t oh 0 - - 0- - 0- - ns output disable time t oz - - 200 - - 80 - - 40 ns holdb setting setup time t hfs 100 - - 0 - - 0 - - ns holdb setting hold time t hfh 100 - - 20 - - 10 - - ns holdb release setup time t hrs 100 - - 0 - - 0 - - ns holdb release hold time t hrh 100 - - 20 - - 10 - - ns time from holdb to output high-z t hoz - - 100 - - 80 - - 40 ns time from holdb to output change t hpd - - 100 - - 80 - - 40 ns sck rise time *1 t rc - - 1 --1 --1 s sck fall time *1 t fc - - 1 --1 --1 s output rise time *1 t ro - - 100 - - 50 - - 40 ns output fall time *1 t fo - - 100 - - 50 - - 40 ns write time t e/w - - 5 --5 --5 ms *1 not 100% tested ac measurement conditions limits parameter symbol min. typ. max. unit load capacity c l - - 30 pf input rise time - - - 50 ns input fall time - - - 50 ns input voltage - 0.2vcc/0.8vcc v input / output judgment vo ltage - 0.3vcc/0.7vcc v sync data input / output timing figure 1. input timing csb sck si so tcs tcss tscks tsckwl tsckwh tdis tdih trc tfc high-z si is taken into ic inside in sync with data rise edge of sck. input address and data from the most significant bit msb figure 2. input / output timing csb sck si so tpd toh tro,tfo toz tcsh tsckh tcs hi g h-z figure 3. hold timing csb sck si n+1 "h" "l" n dn n-1 dn dn-1 holdb so dn+1 thfs thfh thoz thrs thrh tdis thpd high-z so is output in sync with data fall edge of sck. data is output from the most significant bit msb.
datasheet 4/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com block diagram pin configuration pin descriptions terminal name input/output function csb input chip select input so output serial data output input write protect input write command is prohibited write status register command is prohibited gnd - all input / output reference voltage, 0v si input start bit, ope code, address, and serial data input sck input serial clock input holdb input hold input command communications may be suspended temporarily (hold status) vcc - power source to be connected instruction decode control clock generation voltage detection write inhibition high voltage generator instruction register 131,072 bit eeprom 8bit 14bit address register data register address decoder r/w amp 14bit csb sc k si holdb wp so 8bit wp bottom view a1 nc a2 a3 sck nc b1 b2 b3 c3 c2 c1 d1 d2 d3 nc nc si gnd holdb so wp vcc csb a b c d 1 2 3
datasheet 5/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com figure 6. "l" output voltage vol1(vcc=2.5v) figure 7. "h" output voltage voh1 (vcc=2.5v) figure 4. "h" input voltage vih (csb,sck,si,holdb,wp) figure 5. "l" input voltage vil (csb,sck,si,holdb,wp) typical performance curves (the following characteristic data are typ. values.)
datasheet 6/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com figure 8. input leak current ili (csb,sck,si,holdb,wp) figure 9. output leak current ilo (so) figure 11. current consumption at read operation icc10 figure 10. current consumpt ion at write operation icc3 typical performance curves \ continued
datasheet 7/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com figure 12. current consumption at standby operation isb figure 13. sck frequency fsck figure 14. sck high time tsckwh figure 15. sck low time tsckwl typical performance curves \ continued
datasheet 8/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com fig. 15 sck high time tsckwh figure 16. csb high time tcs figure 17. csb setup time tcss figure 18. csb hold time tcsh figure 19. si setup time tdis typical performance curves \ continued
datasheet 9/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com figure 20. si hold time tdih figure 21. data output delay time tpd figure 22. output disable time toz figure 23. holdb setti ng hold time thfh typical performance curves \ continued
datasheet 10/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com figure 24. holdb release hold time thrh figure 25. time from holdb to output high-z thoz figure 26. time from holdb to output change thpd figure 27. output rise time tro typical performance curves \ continued
datasheet 11/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com figure 29. w r ite cycle time te/w figure 28. output fall time tfo typical performance curves \ continued ta=-40 ta=25 ta=85
datasheet 12/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com features status registers this ic has status register. the status register expresses the following parameters of 8 bits. bp0 and bp1 can be set by write status register command. t hese 2 bits are memorized into the eeprom, therefore are valid even when power source is turned off. rewrite characteristics and data hold time ar e same as characteristics of the eeprom. wen can be set by write enable command and write disable command. wen becomes write disable status when power source is turned off. r/b is for write conf irmation, therefore cannot be set externally. the value of status register can be read by read status register command. 1. contexture of status register product number bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 br25s128guz-w wpen 0 0 0 bp1 bp0 wen r/b bit memory location function wpen eeprom wp pin enable / disable designation bit wpen=0=invalid wpen=1=valid bp1 bp0 eeprom eeprom write disable block designation bit wen registers write and write status register write enable / disable status confirmation bit wen=0=prohibited wen=1=permitted r/b registers write cycle status (ready / busy) status confirmation bit r/b=0=ready r/b=1=busy 2. write disable block setting write disable block bp1 bp0 br25s128guz-w 0 0 none 0 1 3000h-3fffh 1 0 2000h-3fffh 1 1 0000h-3fffh wp pin by setting wp=low, write command is prohibited. and the write command to be disabled at this moment is wrsr. however, when write cycle is in execution, no interruption can be made. product number wrsr write br25s128guz-w prohibition possible but wpen bit ?1? prohibition impossible holdb pin by holdb pin, data transfer can be interrupted. when sck=?0?, by making holdb from ?1 ? into?0?, data transfer to eeprom is interrupted. when sck = ?0?, by making holdb from ?0? into ?1?, data transfer is restarted.
datasheet 13/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com command mode command contents ope code wren write enable command 0000 0110 wrdi write disable command 0000 0100 read read command 0000 0011 write write command 0000 0010 rdsr read status register command 0000 0101 wrsr write status register command 0000 0001 timing chart 1. write enable (wren) / disable (wrdi) command this ic has write enable status and write disable status. it is set to write enable status by write enable command, and it is set to write disable status by write disable command. as for these commands, set csb low, and then input the respective ope codes. the respective commands are accepted at the 7-th clock rise. even with input over 7 clocks, command becomes valid. when to carry out write command, it is necessary to set write enable status by the write enable command. if write command is input in the write disable status, the command is cancelled. and even in the write enable status, once write command is executed, it gets in the wr ite disable status. after power on, this ic is in write disable status. 2. read command (read) by read command, data of eeprom can be read. as for th is command, set csb low, then input address after read ope code. eeprom starts data output of the designated address. data output is started from sck fall of 23-th clock, and from d7 to d0 sequentially. this ic has increment read function. afte r output of data for 1 byte (8bi ts), by continuing input of sck, data of the next address can be read. increment read can read all the addresses of eeprom. after reading data of the most significant address, by continuing increment read, data of the most insignificant address is read. wren (write enable): write enable figure 30. write enable command high-z 6 03 7 12 45 csb sck so si 00000110 figure 31. write disable command wrdi (write disable): write disable high-z 0000 si 0100 03 12 4 7 csb sck 5 6 so high-z 11 1 1 0 0 3 7 1 2 d6 so csb sck si 4 5 a12 6 8 * a0a1 d7 23 30 24 d0 0 0 0 0 0 d2 d1 9 10 a13 30 31 * figure 32. read command
datasheet 14/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com 3. write command (write) by write command, data of eeprom can be written. as fo r this command, set csb low, then input address and data after write ope code. then, by making csb high, the eeprom starts writing. the write time of eeprom requires time of te/w (max 5ms). during te/w, other than read status register command is not accepted. set csb high between taking the last data (d0) and rising the next sc k clock. at the other timing, write co mmand is not executed, and this write command is cancelled. this ic has page write function, and after input of data for 1 byte (8 bits), by continuing data input without setting csb high, 2byte or more data can be written for one te/w. up to 64 arbitrary bytes can be written. in page write, the insignificant 6 bit of the designated address is incremented internal ly at every time when data of 1 byte is input and data is written to respective addresses. when data of the maximum bytes or higher is input, address rolls over, and previously input data is overwritten. 4. read status register command (rdsr) write status register command can write da ta of status register. the data can be wri tten by this command are 3 bits, that is, wpen (bit7), bp1 (bit3) and bp0 (bit2) among 8 bits of st atus register. by bp1 and bp0, write disable block of eeprom can be set. as for this command, set csb low, and input ope code of write status register, and input data. then, by making csb high, eeprom starts writing. write time requires ti me of te/w as same as writ e. as for csb rise, set csb high between taking the last data bit (bit0) and the next sck clock rising. at the other timing, command is cancelled. write disable block is determined by bp1 bp0, and the block c an be selected from 1/4 , 1/2, and entire of memory array (refer to the write disable block setting t able.). to the write disabled block, writ e cannot be made, and only read can be made. high-z 9? =don't care 31 d0 0 0 0 0 0 d2 d1 d7 23 30 24 d6 0 a0a1 * 1 1 2 4 0 csb sck si so 0 3 7 8 5 6 a12 11 9 10 a13 * figure 33. write command csb sck high-z *=don't care 0 0 0 0 1 wpen 0 1 2 4 0 si so 0 3 7 8 5 6 * 9 10 11 12 13 14 15 * * bp1 bp0 * * bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 0 figure 34. write status register figure 35. read status register command high-z bit7 bit6 bit5 bit4 00 0 bit3 bit2 bit1 bit0 13 csb sck si 1 1 10 6 0 so 14 1 2 wen r/b 11 15 3 7 9 0 5 12 0 0 0 0 0 4 8 wpen bp1 bp0
datasheet 15/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com wp cancel valid area wp is normally fixed to ?h? or ?l? for use, but when wp is co ntrolled so as to cancel writ e status register command, pay attention to the following wp valid timing. while write status register command is executed, by setting wp = ?l? in cancel valid area, command can be cancelled. the area from command ope code to csb rise at internal automati c write start becomes the cancel valid area. however, once write is started, by any input write cycle cannot be cance lled. wp input becomes don?t care, and cancellation becomes invalid. holdb pin by holdb pin, command communication can be stopped tem porarily (hold status). the command communications are carried out when the holdb pin is high. to get in hold status, at command communication, when sck=low, set the holdb pin low. at hold status, sck and si become don?t care, and so becomes high impedance (high-z). to release the hold status, set the holdb pin high when sck=low. af ter that, communication can be restarted from the point before the hold status. for example, when hold status is made after a5 address input at read, after release of hold status, by starting a4 address input, read can be restart ed. when in hold status, keep csb low. when it is set csb=high in hold status, the ic is reset, theref ore communication after that cannot be restarted. figure 36. wp valid timing (at inputting wrsr command) 6 7 ope code data te/w data write time sck 15 16 valid (wrsr command is reset by wpb=l) invalid
datasheet 16/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com method to cancel each command read, rdsr ? method to cancel : cancel by csb = ?h?. write page write a ope code or address input area cancellation is available by csb=?h?. b data input area (d7 to d1 input area) cancellation is available by csb=?h?. c data input area (d0 area) in this area, cancellation is not available. when csb is set high, write starts. by continuing to input sck clock without rising csb, the command will be page write command. in page write mode, there is write enable area at every 8 clocks. d te/w area in the area c, by rising csb, write starts. while writting, by any input, cancellation cannot be made. note1) if vcc is made off during write execution, designated address data is not guaranteed, theref ore write it once again. note2) if csb is rised at the same timing as that of the sck ri se, write execution / cancel beco mes unstable, therefore, it is recommended to rise in sck = ?l? area. as for sck rise, assure timing of tc ss / tcsh or more. wrsr a from ope code to 15-th clock rise cancellation is available by csb=?h?. b from 15-th clock rise to 16-th clock rise (write enable area) in this area, cancellation is not available. when csb is set high, write starts. c after 16-th clock rise. cancellation is available by csb=?h?. however, if write starts (csb is rised) in the area b, cancellation cannot be made by any means. and, by inputting on sck clock, cancellation cannot be made. note1) if vcc is made off during write ex ecution, designated address data is not guaranteed, therefor e write it once again note2) if csb is rised at the same timing as that of the sck rise, wr ite execution / cancel becomes unstable, therefore, it is recommended to rise in sck = ?l ? area. as for sck rise, assure timing of tcss / tcsh or more. wren/wrdi a from ope code to 7-th clock rise, cancellation is available by csb = ?h?. b cancellation is not available 7-th clock. figure 37. read cancel valid timing figure 38. rdsr cancel valid timing figure 41. wren/wrdi cancel valid timing d7 b d6 d5 d4 d3 d2 d1 d0 sck si c figure 40. wrsr cancel valid timing ope code cancel available in all areas of rdsr mode data 8 bits 8 bits ope code data te/w 8 bits 14 15 16 17 d1 d0 a b c 8 bits a b c sck si ope code 8 bits 6 7 8 a b sck figure 39. write cancel valid timing ope code address a data te/w b d c 8bits 8bits 16bits ope code address cancel available in all areas of read mode data 8 bits 8 bits 16bits
datasheet 17/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com i/o peripheral circuits in order to realize stable high speed operations, pay attention to the following input / output pin conditions. input pin pull up, pull down resistance when to attach pull up, pull down resistance to eeprom input pin, select an appropriate val ue for the microcontroller vol, iol with considering vil characteristics of this ic. 1. pull up resistance and, in order to prevent malfunction or erroneous write at power on/off, be sure to make csb pull up. 2.pull down resistance further, by amplitude vihe, vile of signal input to eeprom, operation speed changes. by inputting vcc/gnd level amplitude of signal, more stable high speed operations c an be realized. on the contrary, when amplitude of 0.8v cc / 0.2vcc is input, operation speed becomes slow. *1 in order to realize more stable high speed operatio n, it is recommended to make the values of r pu , r pd as large as possible, and make the amplitude of signal input to eeprom close to the amplitude of v cc / gnd level. ( 1 in this case, guaranteed value of operating timing is guaranteed.) figure 42. pull up resistance figure 43. pull down resistance r pd R v ohm i ohm ??? v ohm R v ihe ??? example) when v cc =5v, v ohm =v cc -0.5v, i ohm 0.4ma, v ihe =v cc 0.7v, from the equation , r pd R 5 0.5 0.410 -3 r pd R 11.3[k ] r pu R v cc v olm i olm ??? v olm Q v ile ??? r pu R 5 0.4 210 - 3 r pu R 2.3[k] with the value of rpu to satisfy the above equation, v olm becomes 0.4v or lower, and with v ile (=1.5v), the equation is also satisfied. ?v ile :eeprom v il specifications ?v olm :microcontroller v ol specifications ?i olm :microcontroller i ol specifications example) when vcc=5v, v ile =1.5v, v olm =0.4v, i olm =2ma, from the equation , i olm v ile v olm ?l? output ?l? input microcontroller eeprom r pu i ohm v ihe v ohm microcontroller eeprom ?h? output ?h? input r pd
datasheet 18/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com so load capacity condition load capacity of so output pin affects upon delay characteristic of so output (data output delay time, time from holdb to high-z, output rise time, output fall time.) . in order to make output delay characteristic into better, make so load capacity small. other cautions make the each wire length from the microcontroller to eepr om input pin same length, in order to prevent setup / hold violation to eeprom, owing to difference of wire length of each input. equivalent circuit output circuit input circuit eeprom so c l figure 44. so load capacity of data output delay time tpd holdb figure 49. holdb input equivalent circuit oeint. so figure 45. so output equivalent circuit csb reset int. figure 46. csb input equivalent circuit sck si figure 47. sck input equivalent circuit figure 48. si input equivalent circuit figure 50. wp input equivalent circuit wp
datasheet 19/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com notes on power on/off at standby set csb ?h?, and be sure to set sck, si input ?l? or ?h?. do not input intermediate electric potantial. at power on/off when vcc rise or fall, set csb=?h? (=vcc). when csb is ?l?, this ic gets in input accept status (active). if power is turned on in this status, noises and the likes may cause malfunction, erroneous write or so. to prevent these, at power on, set csb ?h?. (when csb is in ?h? status, all inputs are canceled.) (good example) csb terminal is pulled up to vcc. at power off, take 10ms or more before supply. if powe r is turned on without observing this condition, the ic internal circui t may not be reset. (bad example) csb terminal is ?l? at power on/off. in this case, csb always becomes ?l? (active stat us), and eeprom may have malfunction or erroneous write owing to noises and the likes. even when csb input is high-z, the status becomes like this case. operating timing after power on as shown in figure 52, at standby, when sck is ?h?, even if csb is fallen, si status is not read at fall edge. si status is rea d at sck rise edge after fall of csb. at standby and at power on/off, set csb ?h? status. at power on malfunction preventing function this ic has a por (power on reset) circuit as mistake writ e countermeasure. after por acti on, it gets in write disable status. the por circuit is valid only when power is on, and does not work when power is off. when power is on, if the recommended conditions of the following tr, toff, and vbot are not satisfied, it may become write enable status owing to noises and the likes. recommended conditions of t r , t off , vbot t r t off vbot 10ms or below 10ms or higher 0.3v or below 100ms or below 10ms or higher 0.2v or below low voltage malfunction preventing function lvcc (vcc-lockout) circuit prevents data rewrite ac tion at low power, and prevents wrong write. at lvcc voltage (typ. =1.2v) or below, it prevent data rewrite. tr toff vbot 0 vcc figure 51. csb timing at power on/off csb vcc bad example good example figure 53. rise waveform figure 52. operating timing 0 1 2 command start here. si is read. even if csb is fallen at sck=?h?, si status is not read at that edge. csb sck si
datasheet 20/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com noise countermeasures vcc noise (bypass capacitor) when noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1 f) between ic vcc and gnd. at that time, attach it as close to ic as possible. and, it is also recommended to attach a bypass capacitor between board vcc and gnd. sck noise when the rise time of sck (trc) is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. to avoid this, a schmitt trigger circuit is built in sck input. the hysterisis width of this circuit is set a bout 0.2v, if noises exist at sck input, set the noise amplitude 0.2vp- p or below. and it is recommended to set the rise time of sck (trc) 100ns or below. in the case when the rise time is 100ns or higher, take sufficient noise countermeasures. make the clock rise, fall time as small as possible. wp noise during execution of write status regist er command, if there exist noises on wp pin, mistake in recognition may occur and forcible cancellation may result. to avoid this, a schmitt trigger circuit is built in wp input. in the same manner, a schmitt trigger circuit is built in csb in put, si input and holdb input too. cautions on use (1) described numeric values and data are design repres entative values, and the values are not guaranteed. (2) we believe that application circuit examples are recommendabl e, however, in actual use, confirm characteristics further sufficiently. in the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluct uations of external parts and our lsi. (3) absolute maximum ratings if the absolute maximum ratings such as impressed voltage a nd operating temperature range and so forth are exceeded, lsi may be destructed. do not impress vo ltage and temperature exceeding the absol ute maximum ratings. in the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to lsi. (4) gnd electric potential set the voltage of gnd terminal lowest at any action condition. make sure that eac h terminal voltage is higher than that of gnd terminal. (5) heat design in consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (6) terminal to terminal short circuit and wrong packaging when to package lsi onto a board, pay sufficient attention to lsi direction and displacement. wrong packaging may destruct lsi. and in the case of short circuit between lsi terminals and terminals and power source, terminal and gnd owing to foreign matter, lsi may be destructed. (7) use in a strong electromagnetic field may cause malfunction, therefore, ev aluate design sufficiently. status of this document the japanese version of this document is fo rmal specification. a customer may use this translation version only for a reference to help reading the formal version. if there are any differences in translation version of this document formal version takes priority.
datasheet 21/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com ordering information product code description b r 2 5 s 1 2 8 g u z - w e 2 bus type 25spi operating temperature/ power source voltage -40 to +85 / 1.7v to 5.5v capacity 128=128k package guz : vcsp35l2 double cell packaging and forming specification e2 : embossed tape and reel (vcsp35l2) quantity : reel of 3000
datasheet 22/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com physical dimension tape and reel information marking diagram vcsp35l2(br25s128guz-w) (top view) s128 part number marking lot number 1pin mark (unit : mm) vcsp35l2 (br25s128guz-w) 23 1 a b c d s 0.06 s 2.000.05 0.4max 2.630.05 0.100.05 ba 0.05 0.500.05 12- 0.250.05 p=0.52 0.5650.05 p=0.53 b a 1pin mark ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tape quantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 3000pcs e2 () direction of feed reel 1pin vcsp35l2(br25s128guz-w)
datasheet 23/23 br25s128guz-w (128k) tsz02201-0r2r0g100310-1-2 19.jul.2012 rev.001 ?2012 rohm co., ltd. all rights reserved. tsz22111 ? 15? 001 www.rohm.com revision history date revision changes 19.jul.2012 001 new release
datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c appliances, amusement equipment, etc.). if you intend to use our products in devices requiring ex tremely high reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecra ft, nuclear power controllers, fuel c ontrollers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (?specific applications?), please consult with the rohm sale s representative in advance. unless otherwise agreed in writing by rohm in advance, ro hm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hm?s products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china class class class b class class class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditio ns, as exemplified below. accordin gly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of an y rohm?s products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified bel ow), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range descr ibed in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used; if flow soldering met hod is preferred, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification
datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin c onsidering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a hum idity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohm?s internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since our products might fall under cont rolled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with rohm representative in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contain ed in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. rohm shall not be in any way responsible or liable for infringement of any intellectual property rights or ot her damages arising from use of such information or data.: 2. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the information contained in this document. other precaution 1. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties.
datasheet datasheet notice ? we rev.001 ? 2014 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information.
datasheet part number br25s128guz-w package vcsp35l2 unit quantity 3000 minimum package quantity 3000 packing type taping constitution materials list inquiry rohs yes br25s128guz-w - web page distribution inventory

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