01/99 b-9 2N4117, 2N4117a, 2n4118, 2n4118a, 2n4119, 2n4119a n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 300 mw power derating (to 175c) 2 mw/c toe72 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 4 case 2N4117 2n4118 2n4119 at 25c free air temperature: 2N4117a 2n4118a 2n4119a process nj01 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current 2N4117, 2n4118, 2n4119 i gss C 10 C 10 C 10 pa v gs = C 20 v, v ds = ?v 2N4117a, 2n4118a, 2n4119a C 1C 1C 1pav gs = C 20 v, v ds = ?v gate source cutoff voltage v gs(off) C 0.6 C 1.8 C 1 C 3 C 2 C 6 v v ds = 10 v, i d = 1 na drain saturation current (pulsed) 2N4117, 2n4118, 2n4119 i gss 0.03 0.09 0.08 0.24 0.2 0.6 ma v ds = 10 v, v gs = ? v 2N4117a, 2n4118a, 2n4119a 0.015 0.09 0.08 0.24 0.2 0.6 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common source forward g fs 70 210 80 250 100 330 s v ds = 10 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 3 5 10 s v ds = 10 v, v gs = ?v f = 1 khz common source input capacitance c iss 333pfv ds = 10 v, v gs = ?v f = 1 mhz common source reverse c rss 1.5 1.5 1.5 pf v ds = 10 v, v gs = ?v f = 1 mhz transfer capacitance audio amplifiers ultra-high input impedance amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-9
|
