bpw76 document number 81526 rev. 1.3, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8401 silicon npn phototransistor description bpw76 is a high sensitive silicon npn epitaxial pla- nar phototransistor in a standard to-18 hermetically sealed metal case. its flat glass window makes it ideal for applications with external optics. a base terminal is available to enable biasing and sensitivity control. features ? hermetically sealed case flat window very wide viewing angle ? = 40 exact central chip alignment long range light barrier with an additional optics base terminal available high photo sensitivity suitable for visible and near infrared radiation selected into sensitivity groups lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications detector in electronic control and drive circuits absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test condition symbol value unit collector base voltage v cbo 80 v collector emitter voltage v ceo 70 v emitter base voltage v ebo 5v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma total power dissipation t amb 25 c p tot 250 mw junction temperature t j 125 c storage temperature range t stg - 55 to + 125 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient r thja 400 k/w thermal resistance junction/ case r thjc 150 k/w
www.vishay.com 2 document number 81526 rev. 1.3, 08-mar-05 bpw76 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified type dedicated characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector-emitter dark current v ce = 20 v, e = 0 i ceo 1 100 na collector-emitter capacitance v ce = 5 v, f = 1 mhz, e = 0 c ceo 6pf parameter test condition symbol min ty p. max unit angle of half sensitivity ? 40 deg wavelength of peak sensitivity p 850 nm range of spectral bandwidth 0.5 620 to 980 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.15 0.3 v tu r n - o n t i m e v s = 5 v, i c = 5 ma, r l = 100 ? t on 6 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 ? t off 5 s cut-off frequency v s = 5 v, i c = 5 ma, r l = 100 ? f c 110 khz parameter test condition part symbol min ty p. max unit collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v bpw76a i ca 0.4 0.6 0.8 ma BPW76B i ca 0.6 1.2 ma figure 1. total power dissipati on vs. ambient temperature 0 25 50 75 100 0 200 400 800 150 94 8342 600 125 t amb C ambient temperature ( c ) p Ctotal power dissipation ( mw ) tot r thjc r thja iure 2colletordarcurrentsambienttemperature 94 8343 20 i - collector dark current ( na) ceo 10 0 10 1 10 2 10 3 10 4 10 6 10 5 150 50 100 v ce = 20v e=0 t amb - ambient t emperature ( c)
bpw76 document number 81526 rev. 1.3, 08-mar-05 vishay semiconductors www.vishay.com 3 figure 3. relative collector cu rrent vs. ambient temperature figure 4. collector light current vs. irradiance figure 5. collector light current vs. collector emitter voltage 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0 102030405060708090100 t amb - ambient t emperature ( c) 948344 i - relative collector current ca rel v =5v = 950 nm ce e e = 1 mw/cm 2 0.01 0.1 1 0.001 0.01 0.1 1 10 i C collector light current ( ma) ca e e C irradiance ( mw/cm 2 ) 10 94 8345 v ce =5v = 950 nm 0.1 1 10 0.01 0.1 1 i C collector light current ( ma) ca v ce C collector emitter voltage ( v ) 100 94 8346 e e =1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05mw/cm 2 bpw76a = 950 nm igure 6.collectoremittercaac itance.collectoremitter voltage igure .urnn/urnime.collectorcurrent igure 8.elatieectralenitiit.waelength 0.1 1 10 0 4 8 12 16 20 c C collector emitter capacitance ( pf ) ceo v ce C collector emitter voltage ( v ) 100 94 8247 f=1mhz 04 81216 94 8253 0 2 4 6 8 12 t / t Cturn on / turn off time ( s ) off i c C collector current ( ma ) 10 on v ce =5v r l =100 ? =950nm t off t on 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s ( ) C relative spectral sensitivity rel C wavelength ( nm ) 94 8348 800
www.vishay.com 4 document number 81526 rev. 1.3, 08-mar-05 bpw76 vishay semiconductors package dimensions in mm 0.4 0.2 0 0.2 0.4 s C relative sensitivity rel 0.6 94 8347 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 9. relative radiant sensitivity vs. angular displacement 96 12175
bpw76 document number 81526 rev. 1.3, 08-mar-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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