vt3060g, VFT3060G, vbt3060g, vit3060g www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 89135 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.40 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? not recommended for pcb bottom side wave mounting ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab and to-262aa package) ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency inverters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-220ab, ito-220ab, to-263ab and to-262aa molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs max. ? ? primary characteristics i f(av) 2 x 15 a v rrm 60 v i fsm 150 a v f at i f = 15 a 0.61 v t j max. 150 c package to-220ab, ito-220ab, to-263ab, to-262aa diode variations common cathode to-220ab 1 2 3 1 k 2 3 to-263ab 1 2 k to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 k heatsink pin 1 pin 2 pin 3 pin 1 pin 2 case pin 3 tmbs ? ito-220ab 1 2 3 vt3060g VFT3060G vit3060g vbt3060g maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt3060g VFT3060G vbt3060g vit3060g unit max. repetitive pe ak reverse voltage v rrm 60 v max. average forward rectified current ? (fig. 1) per device i f(av) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 150 a non-repetitive avalanche energy ? at t j = 25 c, l = 60 mh per diode e as 120 mj peak repetitive reverse current ? at t p = 2 s, 1 khz, t j = 38 c 2 c per diode i rrm 1.0 a isolation voltage (ito-220ab only) ? from terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 55 to + 150 c
vt3060g, VFT3060G, vbt3060g, vit3060g www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 89135 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ? ratings and characteristics curves ? (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 60 (min.) - v instantaneous forward voltage per diode (1) i f = 5 a t a = 25 c v f 0.49 - v i f = 7.5 a 0.53 - i f = 15 a 0.65 0.73 i f = 5 a t a = 125 c 0.40 - i f = 7.5 a 0.46 - i f = 15 a 0.61 0.69 reverse current per diode (2) v r = 60 v t a = 25 c ? t a = 125 c i r - 14 850 40 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt3060g VFT3060G vbt3060g vit3060g unit typical thermal resistance per diode r ? jc 3.2 6.2 3.2 3.2 c/w per device 1.9 5.0 1.9 1.9 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab vt3060g-e3/4w 1.88 4w 50/tube tube ito-220ab VFT3060G-e3/4w 1.76 4w 50/tube tube to-263ab vbt3060g-e3/4w 1.39 4w 50/tube tube to-263ab vbt3060g-e3/8w 1.39 8w 800/reel tape and reel to-262aa vit3060g-e3/4w 1.45 4w 50/tube tube case temperature (c) average forward rectified current (a) 36 0 25 50 75 100 125 VFT3060G mounted on specific heatsink 0 150 v(b,i)t3060g 32 28 24 20 16 12 8 4 0 2 4 8 14 018 average forward current (a) average power disspation (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 6 12 d = t p /t t p t 14 10 6 4 2 d = 1.0 10 16 12 8
vt3060g, VFT3060G, vbt3060g, vit3060g www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 89135 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical transient thermal impedance per diode fig. 6 - typical juncti on capacitance per diode ? package outline dimensions in inches (millimeters) instantaneous forward voltage (v) 0 0.2 0.4 0.8 1.2 100 10 0.1 t a = 25 c 0.6 1.0 t a = 150 c t a = 125 c instantaneous forward current (a) 1 t a = 100 c 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 1 0.1 0.01 0.001 100 10 10 1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) v(b,i)t3060g junction to case VFT3060G 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capaci tance (pf) 10 100 to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
vt3060g, VFT3060G, vbt3060g, vit3060g www.vishay.com vishay general semiconductor revision: 16-aug-13 4 document number: 89135 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-262aa heatsi n k pi n 2 pi n 1 pi n 3 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) k 0.380 (9.65) 0.41 1 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591(15.00) 0.624 (15.85) 1 2 0.245 (6.22) mi n k k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.110 (2.79) 0.090 (2.29) 0.047 (1.19) 0.055 (1.40) 0 to 0.01 (0 to 0.254) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) to-263ab 0.105 (2.67) 0.08 (0.095) (2.41) (2.032) 0.42 (10.66) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) 0.33 (8.38) mounting pad layout mi n . mi n . mi n . mi n .
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