RX1214B150W micr owave power transistor ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/ji sq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 orig. doc 1988 revised 06/2013 features ? interdigitated structure ? diffused emitt er ballasting resistors ? gold metallization ? multicell geometry abstract npn silicon planar epitaxial microwave power transistor, intended for use in a common - base class - c broadband pulse power amplifi er, operating in the 1.3 to 1.4 ghz frequency range . recommended for radar applications. diffused emitter ballasting resistorts capable of withstanding a high vswr and provides excellent current sharing. description symbol value unit collector - base voltage; open emitter v cbo max. 60 v collector - emitter voltage; rbe=10? v cer max. 60 v collector - emitter voltage; open base v ceo max. 20 v emitter - base voltage; open collector v ebo max. 3 v collector current {peak}* i c max. 15 a total power dissipation at tmb75c* p tot max. 300 w storage temperature range t stg - 65 to +200 c operating junction temperature t j max. 200 c soldering temperature at 0.3mm from the case; tsld 10s t sld max. 235 c thermal resistance (at tj=75c) from junction to mounting base (cw) r thj - mb max. 1 k/w from junction to mounting base** z thj - mb typ. 0.3 k/w from mounting base to heatsink (cw) r thmb - h typ. 0.2 k/w ratings electrical characteristics
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