infrared led chip high speed gaalas/gaalas 1. material substrate gaalas (n type) removed epitaxial layer gaalas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter symbol min typ max unit condition characteristics v f1 1.1 v if=10ua v f2 1.4 1.6 v if=150ma reverse voltag e v r 5 v ir=10ua power p o 18 21 mw if=150ma p 850 nm if=50ma ? 45 nm if=50ma rise time tr 11.5 ns fall time tf 6.6 ns note : led chip is mounted on to-18 gold header without resin coating. 4. mechanical dat a (a) emission area --------------------- 38.4mil x 38.4mil (b) bottom area --------------------- 39.4mil x 39.4mil (c) bonding pad --------------------- 100um (d) chip thickness --------------------- 7mil (e) junction height --------------------- 6.3mil epi epi p n p side electrode n side electrode 513-37 eo y an g -don g , iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.knowledge-on.com OPA8510HPR wavelength f orward voltag e (e) (d)
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