inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRFAC42R description repetitive avalanche ratings dynamic dv/dt rating hermetically sealed simple drive requirements ease of paralleling applications designed for applications such as switching power supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 600 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 5.4 a p tot total dissipation@tc=25 125 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRFAC42R electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 0.25ma 600 v v gs(th) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 3.4a 1.6 i gss gate source leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds = 600v; v gs = 0 250 ua v sd diode forward voltage i f = 6.2a; v gs = 0 1.5 v ciss input capacitance v ds =250v,v gs =10v, f=1.0mhz 1300 pf coss output capacitance 160 pf crss reverse transfer capacitance 30 pf switching characteristics (t c =25 ) symbol parameter conditions min typ max unit td(on) turn-on delay time v dd =300v,i d =6.2a r g =9.1 13 20 ns tr rise time 18 27 ns td(off) turn-off delay time 55 83 ns tf fall time 20 30 ns pdf pdffactory pro www.fineprint.cn
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