1N5767 series ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road , madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 2 absolute maximum ratings at 25 ? c ( unless otherwise specified ) reverse voltage v r (i r = 10 ? a) 100 v average power dissipation: (25 ? c) free air (p a ) 400 mw (derate linearly to 175 ? c) operating and storage temperature range - 65 ? c to +175 ? c key features ? useful attenuation from 1 ? a to 100 ma bias ? ? ? ? the 1N5767 and the 1n5957 pin diodes are based upon low capacitance pin chips designed with long minority carrier lifetime, and thick intrinsic width. thus operation as low as 1 mhz is possible with low distortion. additionally, the low diode capacitance allows useful operation well into the microwave frequency range. the 1n 5767 is a general purpose low power pin diode designed for both switch and attenuator applications. the 1n5957 is primari ly used as an attenuator pin diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. the 1n5957 has also been characterized for the 75 attenuator, commonly employed in catv systems.
1N5767 series ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 2 of 2 parameter symbol conditions 1N5767 1n5957 units total capacitance (max) c t v r = 100 v, f = 1 mhz 0.4 0.4 pf series resistance r s if = 10 ? a, f = 100 mhz 1000 ? (min) 2000 ? (typ) 1 5 00 ? (min) 3 000 ? (typ) ohms series resistance r s if = 20 ma, f = 100 mhz 8 ? (max) 4 ? (typ) 8 ? (max) 6 ? (typ) ohms series resistance r s if = 100 ma, f = 100 mhz 2.5 ? (max) 1.5 ? (typ) 3 .5 ? (max) 2 .5 ? (typ) ohms carrier lifetime ? ? i f = 10 ma 1.0 (min) 1. 5 (min) 2.0 (typ) ? s reverse current i r v r = voltage rating 10 (max) 10 (max) ? a current for rs = 75 ? i 75 rs = 75 ? 0.7 0. 8 C 1. 2 ma return loss - diode terminates 75 ? line 30 (typ) 30 (typ) db second order distortion - bridged tee attenuator attenuation = 10 db - 40 (typ) - 5 0 (typ) db third order distortion - pin = 50 dbmv f1 = 10 mhz f2 = 13 mhz - 60 (typ) - 6 5 (typ) db
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