NTE6085 silicon dual schottky rectifier description: the NTE6085 is a silicon dual power rectifier in a to220 type package designed using the schottky barrier principle with a platinum barrier metal. features: plastic package metal to silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low v t high surge capability applications: for use in low voltage, high frequency inverters, free wheeling, and polarity protection absolute maximum ratings: maximum recurred peak reverse voltage, v rrm 45v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . working peak reverse voltage, v rwm 31.5v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dc blocking voltage, v r 45v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum average rectified forward current (t c = +105 c), i f(av) per diode 7.5a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . per device 15a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak forward surge current, i fsm (8.3ms, single half sine?wave superimposed on rated load) 150a . . . . . . . . . . . . . . . . . . . peak repetitive reverse surge current (2 s, 1khz), i frm 1a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak repetitive reverse current (2 s, 1khz), i rrm 0.5a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ?65 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?65 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . voltage rate of change (v r = 45v), dv/dt 1000v/ s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . typical thermal resistance, junction?to?case, r thjc 3 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature (during soldering, .250? (6.35mm) from case, 10sec max), t l +250 c . . . . . . . . electrical characteristics (per diode leg): (note 1) parameter symbol test conditions min typ max unit instantaneous forward voltage v f i f = 7.5a, t c = +125 c ? ? 0.57 v i f = 15a, t c = +125 c ? ? 0.72 v i f = 15a, t c = +125 c ? ? 0.84 v instantaneous reverse current i r v r = 45v, t c = +125 c ? ? 15 ma v r = 45v, t c = +25 c ? ? 0.1 ma note 1. pulse test: pulse width = 300 s, duty cycle 2%.
.185 (4.7) .392 (9.95) .269 (6.83) max .6.08 (15.42) max .500 (12.7) min .147 (3.75) dia max .100 (2.54) .054 (1.38) .018 (0.48) .110 (2.79) ak a k .040 (1.02) .245 (6.22)
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