MMBT7002 n-channel enhancement mode field effect transistor features ? high density cell design for low r ds(on) ? voltage controlled small signal switching ? high saturation current capability ? high speed switching absolute maximum ratings (t a = 25 o c) parameter symbol value unit drain-source voltage v dss 60 v drain-gate voltage (r gs 1m ? ) v dgr 60 v gate-source voltage -continuous -non repetitive (tp < 50 s) v gss 20 40 v maximum drain current -continuous -pulsed i d 115 800 ma total power dissipation p tot 200 mw operating and storage temperature range t j , t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit drain source breakdown voltage at i d = 10 a bv dss 60 - v zero gate voltage drain current at v ds = 60 v i dss - 1 a gate-body leakage current at v gs = 20 v i gss - 100 na gate threshold voltage at v ds = v gs , i d = 250 a v gs(th) 1 2.5 v on-state drain current at v gs = 10 v, v ds = 7.5 v i d(on) 500 - ma drain-source on-voltage at v gs = 10 v, i d = 500 ma at v gs = 5 v, i d = 50 ma v ds(on) - - 3.75 1.5 v v static drain-source on-resistance at v gs = 10 v, i d = 500 ma r ds(on) - 7.5 ? forward transconductance at v ds = 10 v, i d = 200 ma g fs 80 - ms input capacitance at v ds = 25 v, f = 1 mhz c iss - 50 pf output capacitance at v ds = 25 v, f = 1 mhz c oss - 25 pf reverse transfer capacitance at v ds = 25 v, f = 1 mhz c rss - 5 pf turn-on time at v dd = 30 v, r l = 150 ? , i d = 0.2 a, v gs = 10v, r gen = 25 ? t on - 20 ns turn-off time at v dd = 30 v, r l = 150 ? , i d = 0.2 a, v gs = 10v, r gen = 25 ? t off - 20 ns 1.gate 2.source 3.drain sot-23 plastic packa g e source gate drain
MMBT7002
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