powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 1 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q 80v 175c n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) i d t c = + 25c 8 0 v 17 m? @ v gs = 10v 72 a 2 1 m? @ v gs = 4.5 v 62 a description and applications this mosfet is designed to meet the stringent requirements of a utomotive applications. it is qualified to aecq101, s upported by a ppap and is ideal for use in : ? synchronous rectifier ? backlighting ? power management functions ? dc - dc converters features ? rated to + 175 ? c C i deal for h igh a mbient t emperature e nvironments ? high conversion efficiency ? low r ds (on) C minimizes on state losses ? low input capacitance ? fast switching speed ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di5060 - 8 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe ; solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h 8 01 2 lps q - 13 p ower di5060 - 8 2 , 500 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. refe r to http://www.diodes.com/ product_compliance_definitions . html 5. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information bottom view top view pin configuration top view internal schematic p ower di5060 - 8 pin1 h8012ls s s s g d d d d yy ww = manufacturer s d d g d d s s green
powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 2 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 8 0 v gate - source voltage v gss 20 v continuous drain current , v gs = 10 v (note 6 ) t a = + 25 ? a = + 70 ? d 10 8 . 4 a continuous drain current , v gs = 10 v (note 7 ) t c = + 25 ? c = + 7 0 ? d 72 60 a maximum continuous body diode f orward current (note 7 ) i s 90 a pulsed drain current ( 10 ? dm 80 a avalanche current , l=0.1mh i a s 11.6 a avalanche energy , l=0.1mh e a s 10.2 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) t a = + 25c p d 2 .6 w thermal resistance, junction to ambient (note 6 ) r ? ja 57 c/w total power dissipation (note 7 ) t c = + 25c p d 136 w thermal resistance, junction to case (note 7 ) r ? j c 1.1 c/w operating and storage temperature range t j, t stg - 55 to + 1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 8 0 - - v v gs = 0v, i d = 1m a zero gate voltage drain current i dss - - 1 ds = 64 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1 - 3 v v ds = v gs , i d = 250 a ds (on) - 12.3 1 7 m ? gs = 10 v, i d = 12 a - 15.1 2 1 v gs = 4.5 v, i d = 6 a diode forward voltage v sd - 0.9 1.2 v v gs = 0v, i s = 20 a dynamic characteristics (note 9 ) input capacitance c iss - 2051 - pf v ds = 40 v, v gs = 0v , f = 1mhz output capacitance c oss - 189.9 - reverse transfer capacitance c rss - 24.6 - gate resistance r g - 0.44 - ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g - 24.1 - nc v ds = 40 v, i d = 12 a total gate charge ( v gs = 10 v ) q g - 46.8 - gate - source charge q gs - 6.9 - gate - drain charge q gd - 12.2 - turn - on delay time t d( on ) - 5.8 - n s v dd = 40 v, v gs = 10 v, i d = 12 a , r g = 1.6 r - 6.5 - turn - off delay time t d( off ) - 17.3 - turn - off fall time t f - 4.7 - body diode reverse recovery time t rr - 33.5 - n s i f = 12 a, di/dt = 1 0 0a/s rr - 38.9 - n c notes: 6 . device mounted on fr - 4 substrate pc b oard, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . thermal resistance from junction to soldering point (on the exposed drain pad). 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 3 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = 3.0v v gs = 3.5v v gs = 5.0v v gs = 6.0v v gs =4.5v v gs = 4.0v v gs = 10.0v 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 10v v gs = 4.5v 0.01 0.014 0.018 0.022 0.026 0.03 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 6a i d = 12a 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs = 10v 125 o c 85 o c 25 o c - 55 o c 150 o c 175 o c 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 4.5v, i d = 6a v gs = 10v, i d = 12a 0 5 10 15 20 25 30 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v 125 o c 85 o c 25 o c - 55 o c 150 o c 175 o c
powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 4 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 10 20 30 40 50 v gs (v) q g (nc) figure 11. gate charge v ds = 40v, i d = 12a 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) = 1 75 c = 25 gs = 10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 4.5v, i d = 6a v gs = 10v, i d = 12a 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 150 o c t a = 175 o c
powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 5 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc jc jc
powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 6 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
powerdi is a registered tr ademark of diodes incorporated. dm th8 01 2 lps q document number: ds 38376 rev. 1 - 2 7 of 7 www.diodes.com march 2016 ? diodes incorporated dm th8 01 2 lps q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents und er the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any cus tomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless aga inst all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauth orized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated wi th such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, int ernational or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life supp ort diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life suppo rt devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or t o affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be p rovided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyr ight ? 201 6 , diodes incorporated www.diodes.com
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