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1. product profile 1.1 general description a 10 w plastic ldmos power transistor for br oadcast transmitter and ism applications at frequencies from hf to 1400 mhz. [1] t p =100 ? s; ? =10%. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 1400 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications blp10h610 broadband ldmos driver transistor rev. 3 ? 25 september 2014 product data sheet table 1. application performance test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 27 50 10 26.7 46 40 50 20 25 65 60 50 19 24 65 80 50 19 25 67 88 to 108 50 16 25 62 400 to 450 50 >14 >25.5 >62 950 to 1225 50 >13 >16 >42 pulsed rf [1] 860 50 10 22 60 1190 to 1410 45 11 >14 - dvb-t 860 50 1 >21 -
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 2 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol 1, 6, 7, 12 n.c. 2, 3 gate1 4, 5 gate2 8, 9 drain2 10, 11 drain1 13 source [1] 7udqvsduhqwwrsylhz ddd table 3. ordering information type number package name description version blp10h610 hvson12 plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 5 ? 6 ? 0.85 mm sot1352-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 3 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor 5. recommended operating conditions see application note an11520 for more details. 6. thermal characteristics [1] r th(j-c) is measured under rf conditions 7. characteristics fig 1. recommended operating area; case temperature as a function of power dissipation ddd 3: 7 fdvh fdvh 7 fdvh ?& ?& ?& table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =10w [1] 3.5 k/w table 6. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.12ma 104 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 12 ma 1.25 1.75 2.25 v v gsq gate-source quiescent voltage v ds = 50 v; i d = 60 ma 1.4 1.8 2.15 v i dss drain leakage current v gs =0v; v ds =50v--1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -1.88- a i gss gate leakage current v gs =11v; v ds =0v--140na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 420 ma -2300- m ?
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 4 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor [1] the industrial test method is performed on spec ial hardware to accommodate the requirements of production. the test results in this table are correl ated to correspond with a performance in the application. 8. test information 8.1 ruggedness in class-ab operation the blp10h610 is capable of withstanding a load mismatch corresponding to vswr = 35 : 1 through all phases under the following conditions: v ds =50v; i dq =60ma; p l =10w; f=860mhz. 8.2 test circuit table 7. ac characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 0.13 - pf c iss input capacitance v gs =0v; v ds = 0 v; f = 1 mhz - 13.5 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 4.5 - pf table 8. rf characteristics test signal: cw; f = 860 mhz; rf performance at v ds =50v; i dq =60 ma; t case =25 ? c; unless otherwise specified, in a cl ass-ab production test circuit [1] . symbol parameter conditions min typ max unit g p power gain p l = 10 w 19.3 22 25.7 db ? d drain efficiency p l = 10 w 56.8 60 - % printed-circuit board (pcb): rogers ro4350; ? r = 3.48; height = 0.762 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 2. component layout ddd pp pp & / 5 & & & & & & 5 & 4 &
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 5 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor [1] american technical ce ramics type 100a or capacitor of same quality. 8.3 graphical data table 9. list of components see figure 2 for component layout. component description value remarks c1, c4, c7 multilayer ceramic chip capacitor 100 pf [1] c2 multilayer ceramic chip capacitor 5.6 pf [1] c3 multilayer ceramic chip capacitor 3.9 pf [1] c5 multilayer ceramic chip capacitor 1 ? f, 25 v murata grm31mr71e105ka01l c6 multilayer ceramic chip capacitor 4.3 pf [1] c8 multilayer ceramic chip capacitor 1 ? f, 50 v murata grm32rr71h105ka01l c9 electrolytic capacitor 220 ? f, 6 3 v l1 wire inductor, 0.8 mm copper wire 2 turn, d = 3 mm r1 resistor 0 ? smd 0805 r2 resistor 20 ? smd 0805 q1 transistor - blp10h610 v ds =50v; i dq = 60 ma; f = 860 mhz. v ds =50v; i dq = 60 ma; f = 860 mhz. (1) p l(1db) = 40.93 dbm (12.4 w) (2) p l(3db) = 41.61 dbm (14.5 w) fig 3. power gain and drain efficiency as function of output power; typical values fig 4. output power as a function of input power; typical values ddd 3 / : * s * s g% g% g% ' ' * s * s ' ' 3 l g%p ddd 3 / g%p ,ghdo3 / 3 /
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 6 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor v ds = 50 v; f = 860 mhz. (1) i dq = 20 ma (2) i dq = 40 ma (3) i dq = 60 ma (4) i dq = 80 ma v ds = 50 v; f = 860 mhz. (1) i dq = 20 ma (2) i dq = 40 ma (3) i dq = 60 ma (4) i dq = 80 ma fig 5. power gain as a function of output power; typical values fig 6. drain efficiency as a function of output power; typical values i dq = 60 ma; f = 860 mhz. (1) v ds = 30 v (2) v ds = 35 v (3) v ds = 40 v (4) v ds = 45 v (5) v ds = 50 v i dq = 60 ma; f = 860 mhz. (1) v ds = 30 v (2) v ds = 35 v (3) v ds = 40 v (4) v ds = 45 v (5) v ds = 50 v fig 7. power gain as a function of output power; typical values fig 8. drain efficiency as a function of output power; typical values ddd 3 / : * s * s g% g% g% ddd 3 / : ' ' ddd 3 / : * s * s g% g% g% ddd 3 / : ' '
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 7 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor 9. package outline fig 9. package outline sot1352-1 (hvson12) 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 02 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqvppduhwkhruljlqdoglphqvlrqv 1rwh 3odvwlfruphwdosurwuxvlrqvripppd[lpxpshuvlghduhqrwlqfoxghg +9621sodvwlfwkhupdohqkdqfhgyhu\wklqvpdoorxwolqhsdfndjhqrohdgv whuplqdoverg\[[pp 627 $ e f' ' k ( ( k hh h / . yz \ \ pp vfdoh & \ & \ ; whuplqdo lqgh[duhd % $ ' ( ghwdlo; $ $ f whuplqdo lqgh[duhd ' k ( k / e h h h $ &% y & z .
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 8 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor 10. handling information 11. abbreviations 12. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description cw continuous wave dvb-t digital video broadcast - terrestrial esd electrostatic discharge ldmos laterally diffused metal-oxide semiconductor hf high frequency ism industrial, scientific and medical smd surface mounted device vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes blp10h610 v.3 20140925 product data sheet - blp10h610 v.2 modifications ? table 6 on page 3 : several changes have been made ? table 8 on page 4 : several changes have been made blp10h610 v.2 20140422 objective data sheet - blp10h610 v.1 blp10h610 v.1 20140120 objective data sheet - -
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 9 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
blp10h610 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights r eserved. product data sheet rev. 3 ? 25 september 2014 10 of 11 nxp semiconductors blp10h610 broadband ldmos driver transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 licenses 13.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties.
nxp semiconductors blp10h610 broadband ldmos driver transistor ? nxp semiconductors n.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 25 september 2014 document identifier: blp10h610 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 recommended operating conditions. . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1 ruggedness in class-ab operation . . . . . . . . . 4 8.2 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 handling information. . . . . . . . . . . . . . . . . . . . . 8 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 13 legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13.4 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13.5 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 contact information. . . . . . . . . . . . . . . . . . . . . 10 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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