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  datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 2scr562f3 npn 6a 30v middle power transistor l outline huml2020l3 l features 1) suitable for middle power driver 2) low v ce(sat) v ce(sat) = 180mv(max.) (i c /i b =3a/60ma) 3) high collector current i c = 6a (max) , i cp = 7a (max) 4) leadless small smd package "huml2020l3" excellent thermal and electrical conductivity 5) lead free/rohs compliant. l inner circuit l applications load switch, battery-driven devices, power management charging circuits, power switches (e.g. motors, fans) l packaging specifications reel size (mm) parameter value v ceo 30v i c 6a package package size (mm) taping code nt tape width (mm) basic ordering unit (pcs) marking 2scr562f3 huml2020l3 2020 tr 180 8 3,000 part no. 2scr562f3 base emitter collector base emitter collector emitter base collector 1/6 2013.05 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet 2scr562f3 l absolute maximum ratings (ta = 25c) collector-base voltage collector-emitter voltage emitter-base voltage dc pulsed base current junction temperature range of storage temperature *1 pw=1ms , single pulse *2 mounted on an fr4 board (25.425.41.6mm , 645mm 2 cu pad) *3 pw=10s , mounted on an fr4 board (25.425.41.6mm , 645mm 2 cu pad) l electrical characteristics (ta = 25c) v ceo 30 v v ebo 6 v parameter symbol values unit v cbo 30 v power dissipation p d *2 1.0 w p d *3 2.1 w collector current i c 6.0 a i cp *1 7.0 a t j 150 c t stg - 55 to + 150 c i b 0.6 a unit collector-emitter breakdown voltage bv ceo i c = 1ma 30 - - v parameter symbol conditions min. typ. max. v emitter-base breakdown voltage bv ebo i e = 100 m a 6 - - v collector-base breakdown voltage bv cbo i c = 100 m a 30 - - m a emitter cut-off current i ebo v eb = 4v - - 0.5 m a collector cut-off current i cbo v cb = 20v - - 0.5 collector-emitter saturation voltage v ce(sat) i c = 3a, i b = 60ma - 120 180 mv v dc current gain h fe v ce = 2v, i c = 500ma 200 - 500 - base-emitter saturation voltage v be(sat) i c = 3a, i b = 60ma - 0.9 1.2 mhz output capacitance c ob v cb = 10v, i e = 0a f = 1mhz - 40 - pf transition frequency f t v ce = 10v, i e = - 500ma f=100mh z - 270 - 2/6 2013.05 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet 2scr562f3 l electrical characteristic curves (ta = 25c) 1 10 100 1000 10000 0 0.5 1 1.5 ta=125oc 75oc 25oc - 40 oc v ce = 2v pulsed 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1.0ma 1.5ma 2.0ma 3.0ma 4.0ma 4.5ma 2.5ma i b = 0.5ma ta=25oc 5.0ma 3.5ma 10 100 1000 1 10 100 1000 10000 v ce = 2v pulsed ta=125oc 75oc 25oc - 40 oc 10 100 1000 1 10 100 1000 10000 v ce = 5v 2v ta=25oc pulsed colector to emitte voltage : v ce [v] fig.1 ground emitter propagation characteristics collector current : i c [ma] base to emitter voltage : v be [v] fig.2 typical output characteristics fig.3 dc current gain vs. collector current (i) dc current gain : h fe collector current : i c [ma] fig.4 dc current gain vs. collector current (ii) dc current gain : h fe collector current : i c [ma] collector current : i c [a] 3/6 2013.05 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet 2scr562f3 l electrical characteristic curves (ta = 25c) 0.1 1 10 1 10 100 1000 10000 i c / i b = 50 pulsed ta= - 40 oc 25oc 75oc 125oc 0.001 0.01 0.1 1 1 10 100 1000 10000 i c / i b = 50 ta=125oc 75oc 25oc - 40 oc 0.001 0.01 0.1 1 1 10 100 1000 10000 ta=25oc i c / i b =50/1 20/1 10/1 10 100 1000 -10 -100 -1000 ta=25oc v ce = 10v f=100mhz fig.5 collector-emitter saturation voltage vs. collector current (i) collector-emitter saturation voltage : v ce(sat) [v] collector current : i c [ma] fig.6 collector-emitter saturation voltage vs. collector current (ii) collector-emitter saturation voltage : v ce(sat) [v] collector current : i c [ma] fig.7 base-emitter saturation voltage vs. collector current base -emitter saturation voltage : v be(sat) [v] collector current : i c [ma] fig.8 gain bandwidth product vs. emitter current transition frequency : f t [mhz] emitter current :i e [ma] 4/6 2013.05 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet 2scr562f3 l electrical characteristic curves (ta = 25c) 10 100 1000 0.1 1 10 100 ta=25oc f=1mhz i c =0a c ob c ib 0.01 0.1 1 10 0.1 1 10 100 ta=25oc single non repetitive pulse. 100ms 10ms 1ms dc fig.9 emitter input capacitance vs. emitter-base voltage collector output capacitance vs. collector-base voltage collector output capacitance : cob [pf] emitter input capacitance : cib [pf] collector - base voltage : v cb [v] emitter - base voltage : v eb [v] fig.10 safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] 5/6 2013.05 - rev.a downloaded from: http:///
2scr562f3 l dimensions (unit : mm) dimension in mm / inches huml2020l3 pattern of terminal position areas [not a recommended pattern of soldering pads] min max min max a 0.55 0.65 0.022 0.026 a1 0.00 0.05 0.000 0.002 b 0.25 0.35 0.010 0.014 b1 1.40 1.60 0.055 0.063 d 1.90 2.10 0.075 0.083 e 1.90 2.10 0.075 0.083 e lp 0.35 0.45 0.014 0.018 lp1lp2 0.90 1.10 0.035 0.043 lp3 0.70 0.80 0.028 0.031 x - 0.10 - 0.004 y - 0.10 - 0.004 min max min max b2 - 0.45 - 0.018 b3 - 1.60 - 0.063 l1 - 0.55 - 0.022 l2l3 - 1.10 - 0.043 l4 - 0.80 - 0.031 0.25 ref 0.01 ref dim milimeters inches 1.30 0.051 0.25 ref 0.01 ref dim milimeters inches 6/6 2013.05 - rev.a downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representativ e and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///


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Newark

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2SCR562F3TR
82AC4062
ROHM Semiconductor Transistor, Npn, 30V, 6A, Huml2020; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:30V; Transition Frequency Ft:270Mhz; Power Dissipation Pd:1W; Dc Collector Current:6A; Dc Current Gain Hfe:200Hfe; Transistor Case Rohs Compliant: Yes |Rohm 2SCR562F3TR 1000: USD0.353
500: USD0.414
250: USD0.456
100: USD0.496
50: USD0.57
25: USD0.643
10: USD0.717
1: USD0.832
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2680

DigiKey

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2SCR562F3TR
2SCR562F3TRCT-ND
ROHM Semiconductor TRANS NPN 30V 6A HUML2020L3 30000: USD0.2625
9000: USD0.26512
6000: USD0.28634
3000: USD0.30224
1000: USD0.33936
500: USD0.39874
100: USD0.4772
10: USD0.689
1: USD0.8
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676

Avnet Americas

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2SCR562F3TR
2SCR562F3TR
ROHM Semiconductor Transistor GP BJT NPN 30V 6A 3-Pin DFN2020 T/R - Tape and Reel (Alt: 2SCR562F3TR) 30000: USD0.2688
24000: USD0.273
18000: USD0.2814
12000: USD0.2898
6000: USD0.2982
3000: USD0.3066
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Mouser Electronics

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2SCR562F3TR
755-2SCR562F3TR
ROHM Semiconductor Bipolar Transistors - BJT NPN 30V 6A 1W DFN2020-3S 1: USD0.8
10: USD0.689
100: USD0.478
500: USD0.399
1000: USD0.34
3000: USD0.302
6000: USD0.285
9000: USD0.265
24000: USD0.262
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Future Electronics

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2SCR562F3TR
ROHM Semiconductor 3000: USD0.263
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Verical

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2SCR562F3TR
65206082
ROHM Semiconductor Trans GP BJT NPN 30V 6A 3-Pin HUML EP T/R 2500: USD0.417
1000: USD0.4297
500: USD0.4442
250: USD0.4608
171: USD0.4801
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3000

Quest Components

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2SCR562F3TR
ROHM Semiconductor 1771: USD0.3955
355: USD0.452
1: USD1.13
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2436

TME

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2SCR562F3TR
2SCR562F3TR
ROHM Semiconductor Transistor: NPN; bipolar; 30V; 6A; 1W; DFN2020-3 3000: USD0.197
500: USD0.21
100: USD0.235
25: USD0.266
3: USD0.287
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Ameya Holding Limited

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2SCR562F3TR
ROHM Semiconductor NPN DRIVER TRANSISTOR 1: USD0.68
10: USD0.564
100: USD0.364
1000: USD0.291
3000: USD0.246
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Avnet Silica

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2SCR562F3TR
2SCR562F3TR
ROHM Semiconductor Transistor GP BJT NPN 30V 6A 3-Pin DFN2020 T/R (Alt: 2SCR562F3TR) BuyNow
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CHIPMALL.COM LIMITED

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2SCR562F3TR
ROHM Semiconductor TRANS NPN 30V 6A HUML2020L3 100: USD0.41148
500: USD0.34512
1000: USD0.33336
3000: USD0.30972
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3000

CoreStaff Co Ltd

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2SCR562F3TR
ROHM Semiconductor RoHS(Ship within 1day) - D/C 2019 1000: USD0.226
500: USD0.234
100: USD0.279
50: USD0.294
10: USD0.477
1: USD0.582
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3000
2SCR562F3TR
ROHM Semiconductor RoHS(Ship within 1day) - D/C 2019 1000: USD0.226
500: USD0.234
100: USD0.279
50: USD0.294
10: USD0.477
1: USD0.582
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