1 transistor 2sd968, 2sd968a silicon npn epitaxial planer type for low-frequency driver amplification complementary to 2sb789 and 2sb789a n features l high collector to emitter voltage v ceo . l large collector power dissipation p c . l mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC62 3:emitter mini power type package 4.5 0.1 2.6 0.1 2.5 0.1 0.4max. 1.0 +0.1 ?.2 4.0 +0.25 ?.20 3.0 0.15 1.5 0.1 0.4 0.08 0.5 0.08 1.5 0.1 0.4 0.04 1.6 0.2 45 marking 321 symbol v cbo v ceo v ebo i cp i c p c * t j t stg ratings 100 120 100 120 5 1 0.5 1 150 C55 ~ +150 unit v v v a a w ?c ?c 2sd968 2sd968a 2sd968 2sd968a n electrical characteristics (ta=25?c) parameter collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol v ceo v ebo h fe1 *1 h fe2 v ce(sat) v be(sat) f t c ob conditions i c = 100 m a, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 150ma *2 v ce = 5v, i c = 500ma *2 i c = 500ma, i b = 50ma *2 i c = 500ma, i b = 50ma *2 v cb = 10v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 100 120 5 90 50 typ 100 0.2 0.85 120 11 max 220 0.6 1.2 20 unit v v v v mhz pf *1 h fe1 rank classification rank q r h fe1 90 ~ 155 130 ~ 220 2sd968 wq wr 2sd968a vq vr marking symbol : w (2sd968) v (2sd968a) marking symbol * printed circuit board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion 2sd968 2sd968a *2 pulse measurement
2 transistor 2sd968, 2sd968a p c ta i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb 0 160 40 120 80 140 20 100 60 0 1.4 1.2 0.4 1.0 0.8 0.2 0.6 printed circut board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion. ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 ta=25?c i b =20ma 8ma 10ma 12ma 18ma 16ma 14ma 6ma 4ma 2ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 015 9 36 12 0 1.2 1.0 0.8 0.6 0.4 0.2 v ce =10v ta=25?c base current i b ( ma ) collector current i c ( a ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( ma ) base to emitter saturation voltage v be(sat) ( v ) 1 10 100 1000 3 30 300 0 300 250 200 150 100 50 v ce =10v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 0 200 160 120 80 40 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 50 40 30 20 10 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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