60612 tkim/d1008pj msim tc-00001783 no. a1381-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 tig058e8 n-channel igbt 400v, 150a, v ce ( sat ); 4v, single ech8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering number : ena1381a features ? low-saturation voltage ? low voltage drive (4v) ? enhansment type ? built-in gate-to-emitter protection diode ? mounting height 0.9mm, mounting area 8.12mm 2 ? dv / dt guarantee * ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-emitter voltage v ces 400 v gate-to-emitter voltage (dc) v ges 6 v gate-to-emitter voltage (pulse) v ges pw 1ms 8 v collector current (pulse) i cp c m =150 f, v ge =4v 150 a maximum collector-to-emitter dv / dt dv ce / dt v ce 320v, starting tch=25 c 400 v / s channel temperature tch 150 c storage temperature tstg -40 to +150 c * : concerning dv / dt (slope of collector voltage at the time of turn-off), dv / dt > 400v / s will be 100% screen-detected in the circuit shown as fig. 1. package dimensions unit : mm (typ) 7011a-004 product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3000 pcs./reel packing type: tl marking electrical connection 1 : emitter 2 : emitter 3 : emitter 4 : gate 5 : collector 6 : collector 7 : collector 8 : collector ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view tl 87 6 5 12 3 4 TIG058E8-TL-H zb lot no.
tig058e8 no. a1381-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector-to-emitter breakdown voltage v (br)ces i c =2ma, v ge =0v 400 v collector-to-emitter cutoff current i ces v ce =320v, v ge =0v 10 a gate-to-emitter leakage current i ges v ge =6v, v ce =0v 10 a gate-to-emitter threshold voltage v ge (off) v ce =10v, i c =1ma 0.4 0.9 v collector-to-emitter saturation voltage v ce (sat) i c =100a, v ge =4v 4.0 5.6 v input capacitance cies v ce =10v, f=1mhz 2200 pf output capacitance coes 32 pf reverse transfer capacitance cres 24 pf fig.1 large current r load switching circuit note1. gate series resistance r g 230 is recommended for protection purpose at the time of turn off. however, if dv / dt 400v / s is satis ed at customer?s actual set evaluation, r g < 230 can also be used. note2. the collector voltage gradient dv / dt must be smaller than 400v / s to protect the device when it is turned off. ordering information device package shipping memo TIG058E8-TL-H ech8 3,000pcs./reel pb free and halogen free i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ge gate-to-emitter voltage, v ge -- v collector current, i c -- a it14281 0 0 20 40 60 80 120 140 160 180 100 200 it14282 0 0 12 5 7 69 8 34 10 0.5 20 40 60 80 120 140 160 180 100 200 1.0 1.5 2.5 2.0 4.0 4.5 3.0 3.5 5.0 tc=25 c v ge =5.0v 4.0v 3.0v v ce =10v 2.5v 25 c 75 c tc= --25 c 100k c m r l r g v cc + tig058e8 4v 0v
tig058e8 no. a1381-3/7 case temperature, tc -- c gate-to-emitter cutoff voltage, v ge (off) -- v v ge (off) -- tc collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v case temperature, tc -- c v ce (sat) -- tc collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v cies, coes, cres -- pf cies, coes, cres -- v ce 130a it14286 05075 100 125 150 25 --25 --50 6 5 8 7 9 10 11 12 4 3 2 i c =150a v ge =4v 4 3 2 it14283 1 11 10 9 8 7 6 5 23456 130a 100a tc= --25 c i c =150a 4 3 2 it14284 1 11 10 9 8 7 6 5 23456 130a 100a tc=25 c i c =150a 4 3 2 it14285 1 11 10 9 8 7 6 5 23456 130a 100a tc=75 c i c =150a 100a it14287 0 50 75 100 125 150 25 --25 --50 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0161820 68 41214 10 2 10 100 7 7 5 3 2 1000 7 5 3 2 5 3 2 it14288 cies coes cres f=1mhz sw time -- r g switching time, sw time -- ns sw time -- i cp switching time, sw time -- ns collector current (pulse), i cp -- a gate series resistance, r g -- 23 57 3 2 100 it14289 1000 7 3 2 7 5 5 3 2 7 100 t r t d (off) t d (on) test circuit fig.1 v ge =4v v cc =320v r g =270 c m =150 f pw=50 s t f 23 57 3 2 100 57 1000 it14290 1000 7 7 5 3 5 2 3 100 7 5 3 2 t r t d (off) t d (on) t f test circuit fig.1 v ge =4v v cc =320v i cp =150a c m =150 f pw=50 s
tig058e8 no. a1381-4/7 gate-to-emitter voltage, v ge -- v collector current (pulse), i cp -- a collector current (pulse), i cp -- a maximum capacitor, c m -- f c m -- i cp i cp -- v ge dv / dt -- r g gate series resistance, r g -- turn off, dv / dt -- v / s it14293 20 40 60 80 100 120 140 0 160 50 0 100 150 200 250 300 350 400 450 v ge =5v v ce =320v c m =150 f tc 70 c it14292 245678 3 1 0 0 20 40 60 80 100 120 140 180 160 v ce =320v c m =150 f it14291 200 250 300 100 150 50 0 0 200 400 600 1200 1000 800 1400 fig.1 switching test circuit v ge =4v v cc =320v r l =2 c m =150 f pw=50 s tc=25 c tc=70 c
tig058e8 no. a1381-5/7 embossed taping speci cation TIG058E8-TL-H
tig058e8 no. a1381-6/7 outline drawing land pattern example tig05e8-tl-h mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
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