42114hk tc-00003110/22512hk gb no.a2300-1/4 semiconductor components industries, llc, 2014 april, 2014 http://onsemi.com tf412s features ? small igss : max ? 1.0na (v gs = ? 20v, v ds =0v) ? small ciss : typ 4pf (v ds =10v, v gs =0v, f=1mhz) ? ultrasmall package facilitates miniaturization in end products ? halogen free compliance applications ? low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications specifications absolute maximum ratings at ta = 25 ? c parameter symbol value unit drain-to-source voltage v dsx 30 v gate-to-drain voltage v gds ? ? c storage temperature tstg ? ? c this product is designed to ?esd immunity < 200v*?, so please take care when handling. * machine model device package shipping TF412ST5G pb-free and halogen free sot-883 8,000 pcs. / reel electrical characteristics at ta ? 25 ? c parameter symbol conditions value unit min typ max gate-to-drain breakdown voltage v (br)gds i g = ? a, v ds =0v ? ? ? 1.0 na cutoff voltage v gs (off) v ds = 10v, i d = 1 a ? ? 0.80 ? 1.5 v drain current i dss v ds = 10v, v gs = 0v 1.2 3.0 ma forward transfer admittance | yfs | v ds = 10v, v gs =0v, f = 1khz 3.0 5.0 ms input capacitance ciss v ds = 10v, v gs = 0v, f = 1mhz 4 pf reverse transfer capacitance crss 1.1 pf n-channel jfet 30v, 1.2 to 3.0ma, 5.0ms, sot-883 orderin g numbe r : ena2300a electrical connection 1 : sourc e 2 : drain 3 : gate top view 1 2 3 marking a2 m m = date cod e sot-883 3 1 2 ordering & package information stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
tf412s no.a2300-2/4 i d -- v ds i d -- v ds drain-to-source voltage, v ds -- v drain-to-source voltage, v ds -- v drain current, i d -- ma drain current, i d -- ma i d -- v gs i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma it16770 012345 0 1.0 0.5 1.5 2.0 2.5 3.0 v gs =0v --0.2v --0.3v --0.4v v gs =0v --0.1v --0.2v it16771 0 5 10 15 20 25 30 0 1.0 2.0 1.5 0.5 2.5 3.0 --0.1v --0.3v --0.4v hd 131113 it16773 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 2.0ma i dss =3.0ma --1.0 --0.8 --0.6 --0.4 --0.2 0 0 2.5 2.0 1.5 0.5 1.0 3.0 3.5 --25 c v ds =10v 25 c ta=75 c v ds =10v crss -- v ds drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf ciss -- v ds drain-to-source voltage, v ds -- v input capacitance, ciss -- pf 23 57 2 0.1 1.0 357 2 10 357 100 1.0 0.1 5 7 2 2 3 10 5 7 3 it16777 v gs =0v f=1mhz it16776 23 57 2 0.1 1.0 357 2 10 357 100 10 1.0 5 7 2 3 v gs =0v f=1mhz | y fs | -- i dss drain current, i dss -- ma forward transfer admittance, | y fs | -- ms v gs (off) -- i dss drain current, i dss -- ma cutoff voltage, v gs (off) -- v hd131113 0 3.5 1.5 1.0 0.5 2.0 2.5 3.0 --0.4 --0.2 --1.2 0 --1.4 --0.8 --0.6 --1.0 v ds =10v i d =1.0 a hd131113 0.5 1.0 1.5 2.0 3.0 0 2.5 3.5 7 0 5 6 2 1 3 4 v ds =10v v gs =0v f=1khz
tf412s no.a2300-3/4 hd131212 p d -- ta allowable power dissipation, p d -- mw ambient temperature, ta -- c 0 120 100 80 60 20 40 20 40 60 80 100 120 140 160 0
tf412s ps no.a2300-4/4 package dimensions TF412ST5G unit : mm sot-883 (xdfn3), 1.0x0.6, 0.35p case 506cb issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. exposed copper allowed as shown. a b e d bottom view b 0.10 c top view 0.10 c a a1 0.10 c 0.10 c c seating plane side view dim min max millimeters a 0.340 0.440 a1 0.000 0.030 b 0.075 0.200 d2 0.620 bsc e 0.350 bsc l 0.170 0.300 solder footprint* dimensions: millimeters 1.10 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. 1 generic marking diagram* *this information is generic. please refer to device data sheet for actual part xx = specific device code m = date code xx m l 0.43 recommended d 0.950 1.075 e 0.550 0.675 e2 0.425 0.550 a m 0.10 b c m 0.05 c e e/2 2x 3x d2 e2 2x 0.41 0.55 0.20 e g a k c a p x 2 outline pin one reference note 3 3x 1 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc mak es no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liab ility arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s techn ical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use a s components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other applica tion in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for an y such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and dis tributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of persona linjuryor death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture o fthe part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale i n any manner.
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