AON7611 30v complementary mosfet general description product summary n-channel p-channel v ds (v) = 30v v ds (v) = -30v i d = 9.0a i d = -18.5a (v gs = 10v) r ds(on) < 50m w r ds(on) < 38m w (v gs = 10v) r ds(on) < 70m w r ds(on) < 62m w (v gs = 4.5v) 100% uis tested 100% r g tested symbol the AON7611 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. units parameter absolute maximum ratings t a =25c unless otherwise noted max p-channel max n-channel g1 d1 s1 g2 d2 s2 n-channel p-channel top view g1 s1 g2 s2 d1 d1 d2 d2 dfn 3x3 ep top view bottom view pin 1 symbol v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r q jc symbol t 10s steady-state steady-state r q jc maximum junction-to-case b 5 6 c/w aa max units maximum junction-to-ambient a r q ja 40 50 c/w maximum junction-to-ambient a d 70 85 c/w thermal characteristics: p-channel t a =100c junction and storage temperature range -55 to 150 40 70 50 parameter typ max 20 94 20.8 8.3 -55 to 150 -11.5 -35 5.5 20 c/w r q ja 2.8 v gate-source voltage drain-source voltage -30 20 i d -18.5 parameter typ c thermal characteristics: n-channel units t a =25c continuous drain current a t a =25c i dsm v units parameter max p-channel max n-channel 30 85 18 maximum junction-to-ambient a 7 t a =25c t a =100c power dissipation b p d pulsed drain current c continuous drain current -5 t a =70c 3 -4 w maximum junction-to-case b c/w c/w maximum junction-to-ambient a d 15 1.5 w t a =70c 0.9 0.9 power dissipation a t a =25c p dsm 1.5 mj avalanche current c 7 -17 repetitive avalanche energy l=0.1mh c 2 14 rev 1: dec 2011 www.aosmd.com page 1 of 11
AON7611 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 20 a 40 50 t j =125c 64 80 53 70 m w g fs 11 s v sd 0.79 1 v i s 9.5 a c iss 170 pf c oss 35 pf c rss 23 pf r g 1.7 3.5 5.3 w q g (10v) 4.05 10 nc q g (4.5v) 2 6 nc q gs 0.55 nc q gd 1 nc t d(on) 4.5 ns t 1.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =3.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =4a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =4a v gs =4.5v, i d =3a v ds =v gs , i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters t r 1.5 ns t d(off) 18.5 ns t f 15.5 ns t rr 7.5 ns q rr 2.5 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =4a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =3.75 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =4a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev 1: dec 2011 www.aosmd.com page 2 of 11
AON7611 n-channel typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =3a v gs =10v i d =4a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4.5v 10v 4v 3.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 20 40 60 80 100 120 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =4a 25 c 125 c rev 1: dec 2011 www.aosmd.com page 3 of 11
AON7611 n-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =4a 0 40 80 120 160 200 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t c =25 c 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms case (note f) figure 9: maximum forward biased safe operating area (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =18 c/w rev 1: dec 2011 www.aosmd.com page 4 of 11
AON7611 n-channel typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note f) 0 2 4 6 8 10 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =85 c/w rev 1: dec 2011 www.aosmd.com page 5 of 11
AON7611 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ar rev 1: dec 2011 www.aosmd.com page 6 of 11
AON7611 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.4 -1.9 -2.4 v i d(on) -35 a 30 38 t j =125c 45 57 46 62 m w g fs 10 s v sd -0.76 -1 v i s -20 a c iss 520 pf c oss 100 pf c rss 65 pf r g 3.5 7.5 11.5 w q g (10v) 9.2 20 nc q g (4.5v) 4.6 10 nc q gs 1.6 nc q gd 2.2 nc t d(on) 7.5 ns t 5.5 ns p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-5a r ds(on) static drain-source on-resistance i dss m a v ds =v gs , i d =-250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w on state drain current v gs =-4.5v, i d =-4a forward transconductance diode forward voltage v =-10v, v =-15v, r =3.0 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz i s =-1a,v gs =0v v ds =-5v, i d =-5a switching parameters maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =-10v, v ds =-15v, i d =-5a gate source charge gate drain charge total gate charge t r 5.5 ns t d(off) 19 ns t f 7 ns t rr 11 ns q rr 5.3 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time v gs =-10v, v ds =-15v, r l =3.0 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =-5a, di/dt=100a/ m s turn-off delaytime i f =-5a, di/dt=100a/ m s turn-on rise time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev 1: dec 2011 www.aosmd.com page 7 of 11
AON7611 p-channel typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 30 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-4a v gs =-10v i d =-5a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 25 30 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -4v - 5v - 8v -10v -4.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 20 40 60 80 100 120 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-5a 25 c 125 c rev 1: dec 2011 www.aosmd.com page 8 of 11
AON7611 p-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-5a 0 50 100 150 200 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t c =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms case (note f) figure 9: maximum forward biased safe operating area (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =6.0 c/w rev 1: dec 2011 www.aosmd.com page 9 of 11
AON7611 p-channel typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note f) 0 4 8 12 16 20 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =85 c/w rev 1: dec 2011 www.aosmd.com page 10 of 11
AON7611 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v v d c d u t v d d v g s v d s v g s r l r g r e s is tiv e s w itc h in g t e s t c irc u it & w a v e fo rm s - + v g s v d s t t t t t t 9 0 % 1 0 % r o n d (o ff) f o ff d (o n ) id vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss ig v gs - + v d c d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt r m rr v dd v dd q = - idt t rr -isd -vds f -i -i vdd vgs vgs rg dut vdc vgs id vgs - + bv dss i ar rev 1: dec 2011 www.aosmd.com page 11 of 11
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