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  vishay BYG23M document number 86062 rev.2,0 7 - jan -0 3 vishay semiconductors www.vishay.com 1 15 811 ultraf ast avalanche smd rectifier features ? glass passivated junction ? low reverse current ? high reverse voltage ? fast reverse recovery time ? wave and reflow solderable applications freewheeling diodes in smps and converters snubber diodes order information absolute maximum ratings t j = 25 c, unless otherwise specified maximum thermal resistance t j = 25 c, unless otherwise specified electrical characteristics t j = 25 c, unless otherwise specified part number part differentiation BYG23M v r = 1000 v @ i fav = 1.5 a parameter test condition sub type symbol value unit reverse voltage = repetitive peak reverse voltage v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current t amb = 65 c i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a e r 20 mj parameter test condition sub type symbol value unit junction case r thjc 25 k/w junction ambient mounted on epoxy-glass hard tissue, 17 mm 2 35 m cu r thja 150 k/w mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), 50 mm 2 35 m cu r thja 100 k/w parameter test condition sub type symbol min ty p. max unit forward voltage i f = 1.0 a v f 1.7 v i f = 1.0 a, t j = 150 c v f 1.35 v reverse current v r = v rrm i r 5 a v r = v rrm , t j = 125 c i r 50 a breakdown voltage i r = 100 a v (br)r 1000 v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 75 ns
document number 86062 rev. 2, 07-jan-03 www.vishay.com 2 vishay BYG23M vishay semiconductors charateristics (t j = 25 c unless otherwise specified) figure 1. max. forward current vs. forward voltage figure 2. max. average forward current vs. ambient temperature figure 3. max. reverse power dissipation vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i C forward current ( a ) v f C forward voltage ( v ) 16096 f t j =25 c t j =150 c 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 t amb C ambient temperature ( c ) 16092 i C average forward current ( a ) fav v r =v rrm half sinewave r thja = 25k/w 125k/w 150k/w 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j C junction temperature ( c ) 16094 v r = v rrm p C reverse power dissipation ( mw ) r 100% 175k/w r thja = 125k/w 80% figure 4. max. reverse current vs. junction temperature figure 5. typ. diode capacitance vs. reverse voltage 1 10 100 1000 25 50 75 100 125 150 1 10 100 1000 25 50 75 100 125 150 t j C junction temperature ( c ) 16095 v r = v rrm  i C reverse current ( a ) r 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0.1 1.0 10.0 100.0 v r C reverse voltage ( v ) 16093 c C diode capacitance ( pf ) d f=1mhz t j =25  c
vishay BYG23M document number 86062 rev. 2, 07-jan-03 vishay semiconductors www.vishay.com 3 dimensions in mm 14275


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Price & Availability of BYG23M
Newark

Part # Manufacturer Description Price BuyNow  Qty.
BYG23M-E3/TR3
64AH2646		 Vishay Intertechnologies Rectifier, Sngl, 1Kv, 1.5A, Do-214Ac Rohs Compliant: Yes |Vishay BYG23M-E3/TR3 100: USD0.162
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BYG23M-E3/TR3
26AK8879		 Vishay Intertechnologies 1.5A,1000V,75Ns, fast Avalanche, smd |Vishay BYG23M-E3/TR3 100: USD0.206
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BYG23M-E3/TR
76K2927		 Vishay Intertechnologies Avalanche Diode, 1.5A, 1Kv Do-214Ac; Repetitive Peak Reverse Voltage:1Kv; Average Forward Current:1.5A; Diode Configuration:Single; Forward Voltage Max:1.7V; Reverse Recovery Time:75Ns; Forward Surge Current:30A; No. Of Pins:2 Pin Rohs Compliant: Yes |Vishay BYG23M-E3/TR 100: USD0.138
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BYG23MHM3_A/I
55AC1472		 Vishay Intertechnologies 1.5A,1000V,75Ns, fast Avalanche, smd |Vishay BYG23MHM3_A/I 50000: USD0.126
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BYG23M-M3/TR3
42X9910		 Vishay Intertechnologies 1.5A,1000V,75Ns, fast Avalanche, smd |Vishay BYG23M-M3/TR3 50000: USD0.101
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10000: USD0.135
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DigiKey

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BYG23M
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BYG23M-M3/TR3
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BYG23M-M3/TR3
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BYG23M
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BYG23M
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Avnet Americas

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BYG23M-E3/TR
BYG23M-E3/TR		 Vishay Intertechnologies 1.5A,1000V,75NS,FAST Avalanche,SMD - Tape and Reel (Alt: BYG23M-E3/TR) 720000: USD0.09791
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BYG23M
BYG23M		 Taiwan Semiconductor Diode Ultra-Fast Recovery 1000V 1.5A 2-Pin DO-214AC T/R - Tape and Reel (Alt: BYG23M) 150000: USD0.0567
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BYG23MHM3_A/I
BYG23MHM3_A/I		 Vishay Intertechnologies 1.5A,1000V,75nS Fast Avalanche,SMD - Tape and Reel (Alt: BYG23MHM3_A/I) 1500000: USD0.13095
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BYG23M-M3/TR3
BYG23M-M3/TR3		 Vishay Intertechnologies 1.5A,1000V,75NS,FAST Avalanche,SMD - Tape and Reel (Alt: BYG23M-M3/TR3) 1500000: USD0.10517
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BYG23M-E3/TR
BYG23M-E3/TR		 Vishay Intertechnologies 1.5A,1000V,75NS,FAST Avalanche,SMD - Tape and Reel (Alt: BYG23M-E3/TR) 720000: USD0.10247
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Mouser Electronics

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BYG23M
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100: USD0.117
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BYG23M-E3/TR
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BYG23MHM3_A/H
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Future Electronics

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BYG23M
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Bristol Electronics

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BYG23M
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TTI

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BYG23M-E3/TR
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BYG23M-E3/TR3
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BYG23M-M3/TR
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BYG23MHE3-A/H
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BYG23MHM3-A/H
BYG23MHM3-A/H		 Vishay Intertechnologies Rectifiers 1.5A,1000V,75NS FAST AVALANCHE 10800: USD0.128
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TME

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BYG23M-E3/TR3
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ComSIT USA

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BYG23M
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Perfect Parts Corporation

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BYG23M-E3/TR
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