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inchange semiconductor product specification silicon npn power transistors 2SD834 description ? with to-220 package ? high dc current gain ? darlington ? low collector saturation voltage ? excellent safe operating area applications ?electronic ignitor ? relay and solenoid drivers ? switching regulators ? motor controls pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage 200 v ceo(sus) collector-emitter voltage open base 180 v v ebo emitter-base voltage open collector 10 v i c collector current-continuous 4 a i b base current 0.3 a p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol characteristics max unit r | jc thermal resistance junction to case 5.0 ??/w fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD834 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =1a ; i b =0 180 v v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 200 v v (br)cbo collector-base breakdown voltage i c =0.1ma ; i e =0 250 v v (br)ebo emitter-base breakdown voltage i e =10ma ; i c =0 10 v v cesat collector-emitter saturation voltage i c =2a;i b =2ma 1.5 v v besat base-emitter saturation voltage i c =2a;i b =2ma 2.0 v i cbo collector cut-off current v cb =250v; i e =0 0.1 ma i ebo emitter cut-off current v eb =10v; i c =0 10 ma h fe dc current gain i c =2a ; v ce =2v 1500 switching times t on turn-on time 1.7 | s t s storage time 15.0 | s t f fall time i c =2a;i b1 =-i b2 =5ma; r l =10 |? pw=20 | s;duty ? 2% 18.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD834 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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