df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 1 toshiba diodes f or p rotecting a gainst esd df 10g 6 m 4 n application - esd protection note: this product is designed for protection against electrostatic discharge (esd) and is not intended for any other purpose, including, but not limited to, voltage regulation. absolute maximum rating s (ta = 25c) c haracteristic s ymbol r ating u nit electrostatic discharge voltage iec61000 - 4 - 2(contact) iec61000 - 4 - 2( air ) v esd (note 1) 23 kv peak pulse power ( tp = 8 / 20 s ) p pk 30 w maximum p eak pulse current ( tp = 8 / 20 s ) i pp (note 2 ) 2 a junction te mperature t j 15 0 c storage te mperature range t stg - 55 ~ 15 0 c note1 : according to iec61000 - 4 - 2 note 2 : according to iec61000 - 4 - 5 note 3 :using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (handling precautions/ d erating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). e lectrical c haracteristics ( ta = 25c) v rwm : working peak reverse voltage v br : reverse breakdown voltage i br : reverse breakd own current i r : reverse current v c : clamping voltage i pp : peak pulse current r dyn : dynamic resistance jedec ? jeita ? ? toshiba ? weight: 3.2 m g (typ.) dfn10 1:i/o 6:nc 2:i/o 7:nc 3:gnd 8:nc 4:i/o 9:nc 5:i/o 10:nc
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 2 c haracteristic s ymbol t est c ondition m in t yp. m ax u nit working peak reverse voltag e v rwm D D 5.5 reverse breakdown vo ltage v br i br = 1 ma 5. 6 6. 2 8 v reverse current i r v r wm = 5.5 v D D 0.1 ? a clamping voltage v c i pp =1a (note1) D 8.5 D v c i pp =2a (note1) D 10 15 clamping voltage vc itlp=16a (note2) D 18 D v vc itlp=30a (note2) D 25 D v dynamic resistance r dyn (note:2) D 0.5 D terminal c apacitanc e c t v r = 0 v , f=1 mhz (note.3) D 0.2 0.3 pf note1 based on iec61000 - 4 - 5 8/20 s pulse. note2 tlp parameter: z0 = 50 , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of tlp characteristics between ipp1 = 8a and ipp2 = 16 a. note 3 guaranteed by design. marking land pattern dimensions for reference only marking code par t number n9 DF10G6M4N equivalent circuit n 9 i/o 1 i/o2 i/o3 i/o4
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 3 characteristics curves (note) note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ta=25 , f = 1mhz total capacitance c t ( pf ) re verse voltage v r (v) vr=0v , ta=2 5 f requency f ( mhz ) total capacitance c t ( pf ) c t - v r c t - f i r - v r i - v reverse vo ltage v r (v) reverse current i r ( n a ) ta=2 5 current i (ma) voltage v (v) - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 current i (ma) voltage v (v) ta=2 5 ta=100 2 5 5 0 7 5 0 0.1 0.2 0.3 0.4 0.5 1000 10000 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 4 note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. tlp voltage (v) tlp current ( a ) vc - i pp t a=25 peak pulse current i pp ( a ) clamp voltage v c ( v ) based on iec61000 - 4 - 5 8/20 s pulse.(ed2) tlp current ( a ) fig based on iec61000 - 4 - 5 8/20 s pulse.(ed.2) tlp z0 = 50 tp = 100 ns tr = 300 ps tlp voltage (v) tlp current ( a ) z0 = 50 tp = 100 ns tr = 300 ps tlp voltage ( v ) tlp current ( a ) 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 100% 90% 50% 10% 0% i t 8 s 20 s t
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 5 insertion loss ( s21 ) s21 - f f requency (ghz) s21 ( db ) ta=25 fig. s21 measurement ci rcuit note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. in sg out network analyzer s21
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 6 esd clamp waveform (iec61000 - 4 - 2) ( n ote) fig. iec61000 - 4 - 2 (contact) t (ns) t (ns) - 8kv contact esd v cl (v) v cl - max - peak = - 11 4 v v cl - 30ns - peak = - 2 0 v v cl - 60ns - peak = - 1 2 v 2 0 0 - 2 0 - 4 0 - 6 0 - 8 0 - 10 0 - 12 0 - 14 0 +8kv contact esd v cl (v) v cl - max - peak = 11 4 v v cl - 30ns - peak = 21 v v cl - 60ns - peak = 11 v 1 40 120 100 8 0 60 40 20 0 - 2 0 - 1 0 0 10 20 30 40 50 60 70 80 90 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) t (ns) - 15 kv contact esd v cl (v) 5 0 0 - 5 0 - 10 0 - 15 0 - 20 0 - 25 0 - 30 0 - 35 0 + 15 kv contact esd v cl (v) v cl - max - peak = 170 v v cl - 30ns - peak = 33 v v cl - 60ns - peak = 14 v 35 0 30 0 25 0 20 0 15 0 10 0 5 0 0 - 5 0 - 10 0 10 20 30 40 50 60 70 80 90 - 10 0 10 20 30 40 50 60 70 80 90 v cl - ma x - peak = - 260 v v cl - 30ns - peak = - 50 v v cl - 60ns - peak = - 30 v note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 7 packag e dimensions
df 10g 6 m 4 n 20 1 5 - 0 9 - 2 9 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collectively toshiba ), reserve the right to make changes to the information in this document, and related hardware, software and systems (col lectively product ) without notice. ? this document and any information herein may not be reproduced without prior written permission from toshiba. even with toshiba s written permission, reproduction is permissible only if reproduction is without alterat ion/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardwa re, software and systems which minimize risk and avoid situations in which a malfunction or failure of product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications , the data sheets and application notes for product and the precautions and conditions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be used with or for. customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this produ ct in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operat ing parameters for such designs and applications. toshiba assumes no lia bility for customers' product design or applications. ? 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