advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 8m fast switching characteristic i d 100a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.75 /w rthj-a maximum thermal resistance, junction-ambient 6 2 /w data and specifications subject to change without n otice 201501132 thermal data parameter 1 operating junction temperature range -55 to 150 drain current, v gs @ 10v 65 pulsed drain current 1 300 storage temperature range total power dissipation 166 -55 to 150 gate-source voltage + 20 drain current, v gs @ 10v 100 total power dissipation 2 ap85t10agp-hf halogen-free product parameter rating drain-source voltage 100 g d s g d s to-220(p) ap85t10a series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 8 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - 80 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 135 216 nc q gs gate-source charge v ds =80v - 27 - nc q gd gate-drain ("miller") charge v gs =10v - 66 - nc t d(on) turn-on delay time v ds =50v - 29 - ns t r rise time i d =40a - 100 - ns t d(off) turn-off delay time r g =3.3 - 65 - ns t f fall time v gs =10v - 83 - ns c iss input capacitance v gs =0v - 6900 11040 pf c oss output capacitance v ds =25v - 650 - pf c rss reverse transfer capacitance f=1.0mhz - 380 - pf r g gate resistance f=1.0mhz - 1.8 3.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 75 - ns q rr reverse recovery charge di/dt=100a/s - 250 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap85t10agp-hf .
ap85t10agp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-re sistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0 2 4 6 8 10 12 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 50 100 150 200 250 300 0 4 8 12 16 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =250ua i d =1ma .
ap85t10agp-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =80v 0 2000 4000 6000 8000 10000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on) .
marking information 5 ap85t10agp-hf part number package code meet rohs requirement for low voltage mosfet only 85t10agp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence .
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