? semiconductor components industries, llc, 2014 march, 2014 ? rev. 0 1 publication order number: NTR5103N/d NTR5103N small signal mosfet 60 v, 310 ma, single, n ? channel, sot ? 23 features ? low r ds(on) ? small footprint surface mount package ? trench technology ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? low side load switch ? level shift circuits ? dc ? dc converter ? portable applications i.e. dsc, pda, cell phone, etc. maximum ratings (t j = 25 c unless otherwise stated) rating symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 30 v drain current (note 1) steady state t a = 25 c t a = 85 c t < 5 s t a = 25 c t a = 85 c i d 260 190 310 220 ma power dissipation (note 1) steady state t < 5 s p d 300 420 mw pulsed drain current (t p = 10 s) i dm 1.2 a operating junction and storage temperature range t j , t stg ? 55 to +150 c source current (body diode) i s 300 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 417 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 300 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) device package shipping ? ordering information NTR5103Nt1g 3000 / tape & reel simplified schematic sot ? 23 case 318 style 21 tj4 m tj4 = device code m = date code = pb ? free package marking diagram & pin assignment 3 2 1 drain gate 2 1 3 source http://onsemi.com sot ? 23 (pb ? free) 60 v 3.0 @ 4.5 v r ds(on) max 310 ma i d max (note 1) v (br)dss ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 2.5 @ 10 v (top view) 3 1 2 n ? channel (note: microdot may be in either location)
NTR5103N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 75 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1 a t j = 125 c 500 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 30 v 200 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.9 2.6 v negative threshold temperature coefficient v gs(th) /t j 4.4 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 240 ma 1.0 2.5 v gs = 4.5 v, i d = 50 ma 1.4 3.0 forward transconductance g fs v ds = 5 v, i d = 200 ma 530 ms charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v 26.7 40 pf output capacitance c oss 4.6 reverse transfer capacitance c rss 2.9 total gate charge q g(tot) v gs = 5 v, v ds = 10 v; i d = 240 ma 0.81 nc threshold gate charge q g(th) 0.31 gate ? to ? source charge q gs 0.48 gate ? to ? drain charge q gd 0.08 switching characteristics, v gs = v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 30 v, i d = 200 ma, r g = 10 1.7 ns rise time t r 1.2 turn ? off delay time t d(off) 4.8 fall time t f 3.6 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.79 1.2 v t j = 85 c 0.7 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2% 3. switching characteristics are independent of operating junction temperatures
NTR5103N http://onsemi.com 3 typical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 6 4 2 0 0 0.4 0.8 1.2 figure 3. on ? resistance vs. drain current and temperature figure 4. on ? resistance vs. drain current and temperature i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 figure 5. on ? resistance vs. gate ? to ? source voltage figure 6. on ? resistance variation with temperature v gs , gate ? to ? source voltage (v) t j , junction temperature ( c) 10 8 6 4 2 0.4 0.8 1.2 1.6 125 100 75 50 25 0 ? 25 ? 50 0.6 1.0 1.4 1.8 2.2 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v 5.0 v 7.0 v 8.0 v 9.0 v 4.5 v 4.0 v 6.0 v 3.5 v 3.0 v 2.5 v 2.0 v t j = ? 55 c t j = 125 c t j = 25 c t j = ? 55 c t j = 125 c t j = 25 c t j = 85 c v gs = 4.5 v i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 r ds(on) , drain ? to ? source resistance ( ) t j = ? 55 c t j = 125 c t j = 25 c t j = 85 c v gs = 10 v i d = 250 ma i d = 75 ma 150 i d = 0.2 a v gs = 4.5 v v gs = 10 v
NTR5103N http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge qg, total gate charge (nc) 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 figure 9. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) 1.2 1.0 0.8 0.6 0.4 0.2 0.01 1 10 v gs , gate ? to ? source voltage (v) i s , source current (a) t j = 25 c i d = 0.25 a 20 16 12 8 4 0 0 10 20 30 40 c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v gate ? to ? source or drain ? to ? source voltage (v) t j = 25 c t j = 85 c v gs = 0 v 0.1
NTR5103N http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap style 21: pin 1. gate 2. source 3. drain d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTR5103N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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