? semiconductor components industries, llc, 2009 march, 2009 ? rev. 1 1 publication order number: NTLUF4189NZ/d NTLUF4189NZ power mosfet and schottky diode 30 v, n ? channel with 0.5 a schottky barrier diode, 1.6 x 1.6 x 0.55 mm cool package features ? low qg and capacitance to minimize switching losses ? low profile udfn 1.6x1.6 mm for board space saving ? low vf schottky diode ? esd protected gate ? this is a halide ? free device ? this is a pb ? free device applications ? dc-dc boost converter ? color display and camera flash regulators ? optimized for power management applications for portable products, such as cell phones, pmp, dsc, gps, and others maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain-to-source voltage v dss 30 v gate-to-source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d 1.5 a t a = 85 c 1.1 t 5 s t a = 25 c 1.9 power dissipation (note 1) steady state t a = 25 c p d 0.8 w t 5 s t a = 25 c 1.3 continuous drain current (note 2) steady state t a = 25 c i d 1.2 a t a = 85 c 0.9 power dissipation (note 2) t a = 25 c p d 0.5 w pulsed drain current tp = 10 s i dm 8.0 a mosfet operating junction and storage temperature t j , t stg -55 to 150 c schottky operating junction & storage temperature t j , t stg -55 to 125 c source current (body diode) (note 2) i s 1.5 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c gate-to-source esd rating (hbm) per jesd22 ? a114f esd 1000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface-mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. cu. http://onsemi.com g s n ? channel mosfet d k a schottky diode 30 v 30 v 250 m @ 3.0 v 200 m @ 4.5 v 0.5 a r ds(on) max 0.5 a 0.52 v i d max v (br)dss mosfet schottky diode v r max i f max v f typ udfn6 case 517at cool pin connections see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information 1 6 aa = specific device code m = date code = pb ? free package aa m 1 350 m @ 2.5 v marking diagram 1 2 3 6 5 4 a n/c d k g s (top view) k d 1.5 a 0.5 a
NTLUF4189NZ http://onsemi.com 2 device ordering information device package shipping ? NTLUF4189NZtag udfn6 (pb ? free) 3000 / tape & reel NTLUF4189NZtbg udfn6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. schottky diode maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units peak repetitive reverse voltage v rrm 30 v dc blocking voltage v r 30 v average rectified forward current i f 0.5 a thermal resistance ratings parameter symbol max units junction-to-ambient ? steady state (note 3) r ja 155 c/w junction-to-ambient ? t 5 s (note 3) r ja 100 junction-to-ambient ? steady state min pad (note 4) r ja 245 mosfet electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 22 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 85 c 10 gate-to-source leakage current i gss v ds = 0 v, v gs = 8.0 v 10 a on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.4 1.1 1.5 v negative threshold temp. coefficient v gs(th) /t j 3.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 1.5 a 145 200 m v gs = 3.0 v, i d = 0.5 a 185 250 v gs = 2.5 v, i d = 0.5 a 220 350 forward transconductance g fs v ds = 4.0 v, i d = 0.15 a 1.1 s charges & capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 95 pf output capacitance c oss 15 reverse transfer capacitance c rss 10 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 1.5 a 1.4 3.0 nc threshold gate charge q g(th) 0.2 gate-to-source charge q gs 0.4 gate-to-drain charge q gd 0.4 3. surface-mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces) 4. surface-mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. cu. 5. pulse test: pulse width 300 s, duty cycle 2% 6. switching characteristics are independent of operating junction temperatures
NTLUF4189NZ http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise specified) parameter units max typ min test condition symbol switching characteristics, vgs = 4.5 v (note 6) turn-on delay time t d(on) v gs = 4.5 v, v dd = 15 v, i d = 1a, r g = 6 7.0 ns rise time t r 4.5 turn-off delay time t d(off) 10.2 fall time t f 1.2 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1a t j = 25 c 0.8 1.2 v t j = 85 c 0.75 reverse recovery time t rr v gs = 0 v, di sd /dt = 100 a/ s, i s = 1 a 10.5 ns charge time t a 8.9 discharge time t b 1.6 reverse recovery charge q rr 2.1 nc schottky diode electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units maximum instantaneous forward voltage v f i f = 10 ma 0.27 0.37 v i f = 100 ma 0.36 0.46 i f = 500 ma 0.52 0.62 maximum instantaneous reverse current i r v r = 10 v 2.0 10 a v r = 30 v 20 200 schottky diode electrical characteristics (t j = 85 c unless otherwise specified) maximum instantaneous forward voltage v f i f = 10 ma 0.2 v i f = 100 ma 0.3 i f = 500 ma 0.51 maximum instantaneous reverse current i r v r = 10 v 80 a v r = 30 v 525 schottky diode electrical characteristics (t j = 125 c unless otherwise specified) maximum instantaneous forward voltage v f i f = 10 ma 0.14 v i f = 100 ma 0.27 i f = 500 ma 0.51 maximum instantaneous reverse current i r v r = 10 v 600 a v r = 30 v 3000 schottky diode electrical characteristics (t j = 25 c unless otherwise specified) capacitance c v r = 5 v, f = 1.0 mhz 6.0 pf 3. surface-mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces) 4. surface-mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. cu. 5. pulse test: pulse width 300 s, duty cycle 2% 6. switching characteristics are independent of operating junction temperatures
NTLUF4189NZ http://onsemi.com 4 typical mosfet characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 5 4 3 2 1 0 0 2 4 6 8 10 2.5 1.5 4 3 2 1 0.5 0 1 2 3 4 5 figure 3. on ? resistance vs. gate voltage figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 3.5 3.0 2.5 2.0 1.5 0.35 0.10 0.15 0.20 0.25 0.30 9 8 7 6 5 4 3 2 0.10 0.15 0.20 0.25 0.35 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) v gs = 4.5 v t j = 25 c 3.5 v 3.0 v 2.5 v 4.0 v 2.0 v v ds = 4 v t j = 25 c t j = 125 c t j = ? 55 c t j = 25 c r ds(on) , drain ? to ? source resistance ( ) v gs = 4.5 v t j = 25 c 2.0 v figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 125 100 75 50 25 0 ? 25 ? 50 0.6 0.7 0.9 1.0 1.2 1.3 1.5 1.7 30 25 20 15 10 5 0 1 10 100 1000 r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 150 0.8 1.1 1.4 v gs = 4.5 v i d = 1.5 a t j = 125 c v gs = 0 v t j = 150 c 3.5 i d = 1.5 a i d = 0.5 a 4.5 4.0 0.30 10 1 0 2.5 v 3.0 v 3.5 v 4.0 v 1.6 t j = 85 c
NTLUF4189NZ http://onsemi.com 5 typical mosfet characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge v ds , drain ? to ? source voltage (v) q g , total gate charge (nc) 30 20 15 10 5 0 0 25 50 75 125 150 1.5 1.25 1 0.75 0.5 0.25 0 0 1 2 3 4 5 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1 0.1 10 100 1.0 0.8 0.6 0.4 0.2 0.1 1.0 10 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) 100 c iss c oss c rss q gd q gs v gs q t v gs = 4.5 v v dd = 15 v i d = 1.0 a t d(off) t d(on) t r t f t j = ? 55 c v gs = 0 v t j = 25 c f = 1 mhz figure 11. threshold voltage t j , temperature ( c) 150 125 50 25 ? 50 0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs , gate ? to ? source voltage (v) i d = 250 a figure 12. single pulse maximum power dissipation single pulse time (s) 1000 100 10 0.1 0.001 0.0000001 0 25 50 75 100 power (w) 25 0 5 10 15 20 v ds , drain ? to ? source voltage (v) v gs = 15 v i d = 1.5 a t j = 25 c v ds 1 1.2 1. 4 1.1 0.9 0.7 0.5 0.3 1.3 t j = 125 c t j = 25 c t j = 150 c 1.3 1.4 ? 25 75 100 1 0.01 0.0001 0.00001 125 150 175
NTLUF4189NZ http://onsemi.com 6 typical mosfet characteristics figure 13. maximum rated forward biased safe operating area figure 14. fet thermal response pulse time (sec) 1000 100 10 1 0 25 50 75 100 125 r(t) ( c/w) 0.1 0.01 0.001 0.0001 0.00001 0.000001 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.1 1 100 v ds , drain ? to ? source voltage (volts) 1 r ds(on) limit thermal limit package limit 10 10 v gs = 8 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 10 s 0.1 0.01 i d , drain current (amps) 150 175
NTLUF4189NZ http://onsemi.com 7 typical schottky characteristics v r , reverse voltage (v) 20 10 0 0.1 1 10 100 1000 10000 i r , reverse current ( a) t j = 25 c t j = 125 c t j = 85 c v f , instantaneous forward voltage (mv) 700 600 500 400 300 200 100 0 0.1 1 10 1000 i f , instantaneous forward current (ma) t j = 25 c t j = 125 c t j = ? 55 c t j = 85 c figure 15. total capacitance v r , reverse voltage (v) 30 20 15 10 5 0 0 10 20 c, total capacitance (pf) t a = 25 c figure 16. typical forward voltage figure 17. typical reverse current 8 18 6 16 4 14 2 12 25 100 800 20 15 525
NTLUF4189NZ http://onsemi.com 8 package dimensions udfn6 1.6x1.6, 0.5p case 517at ? 01 issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d1 e1 bottom view b e 6x 0.10 b 0.05 a c c l 6x note 3 2x 0.10 c pin one reference top view 2x 0.10 c 6x a a1 (a3) 0.05 c 0.05 c c seating plane side view k 6x 1 3 4 6 dim min max millimeters a 0.45 0.55 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d 1.60 bsc d1 1.14 1.34 e 1.60 bsc e1 0.54 0.74 e 0.50 bsc k 0.20 ??? l 0.15 0.35 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* l1 detail a 1.34 0.74 0.50 pitch 0.48 6x 1.90 dimensions: millimeters 0.32 1 6x soldermask defined l1 ??? 0.10 d2 0.38 0.58 d2 2x 0.58 2x on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NTLUF4189NZ/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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