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  EMZ1 / umz1n / imz1a transistors general purpose transistor (dual transistors) EMZ1 / umz1n / imz1a z z z z features 1) both a 2sa1037ak chip and 2sc241zk chip in a emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. z z z z structure npn / pnp epitaxial planar silicon transistor z z z z equivalent circuit EMZ1 / umz1n imz1a (3) (2) (1) (4) (6) (5) tr 2 tr 1 (3) (2) (1) (4) (6) (5) tr 2 tr 1 z z z z absolute maximum ratings (ta = 25 c) parameter symbol limits tr 1 tr 2 unit v cbo 60 v 50 v v v ceo v ebo 7 i c ma 150 ? 60 ? 50 ? 6 ? 150 tj 150 ?c tstg ? 55 + 150 ?c p c EMZ1, umz1n 150 (total) mw imz1a 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. z z z z external dimensions (units : mm) rohm : emt6 EMZ1 rohm : umt6 eiaj : sc-88 umz1n abbreviated symbol : z1 abbreviated symbol : z1 abbreviated symbol : z1 rohm : smt6 eiaj : sc-74 imz1a each lead has same dimensions each lead has same dimensions each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) ( 6 ) ( 5 ) ( 4 ) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 ) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6
EMZ1 / umz1n / imz1a transistors z z z z electrical characteristics (ta = 25 c) tr 1 (npn) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? 2 ? ? ? 0.1 0.1 560 0.4 3.5 vi c = 50 a i c = 1ma i e = 50 a v cb = 60v v eb =7 v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v v a a ? v pf typ. max. unit conditions f t ? 180 ? v ce = 12v, i e = ? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance tr 2 (pnp) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. ? 60 ? 50 ? 6 ? ? 120 ? ? ? ? ? ? ? ? ? 4 ? ? ? ? 0.1 ? 0.1 560 ? 0.5 5 vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 60v v eb = ? 6 v v ce = ? 6v, i c = ? 1ma i c /i b = ? 50ma/ ? 5ma v v a a ? v pf typ. max. unit conditions f t ? 140 ? v ce = ? 12v, i e = 2ma, f = 100mhz v cb = ? 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance z z z z packaging specifications package code tr t148 3000 3000 taping basic ordering unit (pieces) umz1n t2r 8000 EMZ1 imz1a type z z z z electrical characteristic curves tr 1 (npn) 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta=100 ? c v ce = 6v 25 ? c ? 55 ? c collector current : i c ( ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 ? c i b =0a 0.40ma 0.50ma 0.45ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( i ) 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 ? c 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( ii )
EMZ1 / umz1n / imz1a transistors 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 ? c dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( i ) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 ? c ? 55 ? c ta=100 ? c v ce =5v dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ii ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current ( i ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 ? c 25 ? c ? 55 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current ( ii ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 ? c 25 ? c ? 55 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.8 collector-emitter saturation voltage vs. collector current ( iii ) 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 ? c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.9 gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.10 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 10 20 50 100 200 emitter current : i e (ma) fig.11 base-collector time constant vs. emitter current base collector time constant : cc r bb' (ps) ta=25 ? c f=32mh z v cb =6v
EMZ1 / umz1n / imz1a transistors tr 2 (pnp) ? 0.2 collector current : ic ( ma) ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 v ce = ? 6v base to emitter voltage : v be (v) ta=100 ? c 25 ? c ? 40 ? c fig.12 grounded emitter propagation characteristics ? 0.4 ? 4 ? 8 ? 1.2 0 ? 2 ? 6 ? 10 ? 0.8 ? 1.6 ? 2.0 ? 3.5 a ? 7.0 ? 10.5 ? 14.0 ? 17.5 ? 21.0 ? 24.5 ? 28.0 ? 31.5 i b =0 ta=25 ? c ? 35.0 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.13 grounded emitter output characteristics ( i ) ? 40 ? 80 ? 5 ? 3 ? 4 ? 2 ? 1 ? 20 ? 60 ? 100 0 i b =0 ta=25 ? c ? 50 a ? 100 ? 150 ? 200 ? 250 ? 500 ? 450 ? 400 ? 350 ? 300 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.14 grounded emitter output characteristics ( ii ) dc current gain : h fe collector current : i c (ma) fig.15 dc current gain vs. collector current ( i ) 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ta=25 ? c v ce = ? 5v ? 3v ? 1v 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 v ce = ? 6v ta=100 ? c ? 40 ? c 25 ? c dc current gain : h fe collector current : i c (ma) fig.16 dc current gain vs. collector current ( ii ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 ta=25 ? c i c /i b =50 20 10 collector current : i c (ma) collector saturation voltage : v ce (sat) ( v) fig.17 collector-emitter saturation voltage vs. collector current ( i ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 l c /l b =10 ta=100 ? c 25 ? c ? 40 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.18 collector-emitter saturation voltage vs. collector current ( ii ) 50 100 0.5 20 50 100 200 500 1000 12 510 ta=25 ? c v ce = ? 12v emitter current : i e (ma) transition frequency : f t (mhz) fig.19 gain bandwidth product vs. emitter current -0.5 -20 2 5 10 -1 -2 -5 -10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.20 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a


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