preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. april 2010 doc id 17338 rev 1 1/10 10 sts1dn45k3 dual n-channel 450 v, 3.2 ? , 0.5 a supermesh3? power mosfet in so-8 features 100% avalanche tested low input capacitances and gate charge low gate input resistance application switching applications description supermesh3? is a new power mosfet technology that is obtained via improvements applied to stmicroelectronics? supermesh? technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d p w sts1dn45k3 450 v < 3.8 ? 0.5 a 1.7 w so-8 table 1. device summary order codes marking packages packaging sts1dn45k3 1ll45 so-8 tape and reel www.st.com obsolete product(s) - obsolete product(s)
contents sts1dn45k3 2/10 doc id 17338 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 obsolete product(s) - obsolete product(s)
sts1dn45k3 elec trical ratings doc id 17338 rev 1 3/10 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 450 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 0.5 a i d drain current (continuous) at t c = 100 c 0.32 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 2 a p tot total dissipation at t c = 25 c (dual operation) 1.7 w total dissipation at t c = 25 c (single operation) 1.3 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.5 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) tbd mj dv/dt (2) 2. i sd 0. 5 a, di/dt tbd a/s, v peak < v (br)dss peak diode recovery voltage slope tbd v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-amb (1) 1. when mounted on fr4 board (steady state) thermal resistance junction-amb max (single operation) 62.5 c/w thermal resistance junction-amb max (dual operation) 78 c/w obsolete product(s) - obsolete product(s)
electrical characteristics sts1dn45k3 4/10 doc id 17338 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 450 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 0.5 a 3.2 3.8 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f = 1 mhz, v gs = 0 - 150 30 6 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 360 v, v gs = 0 -tbd-pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance gi ving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -tbd-pf r g intrinsic gate resistance f = 1 mhz open drain - tbd - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 360 v, i d = 0.5 a, v gs = 10 v (see figure 3 ) - 6 tbd tbd - nc nc nc obsolete product(s) - obsolete product(s)
sts1dn45k3 electrical characteristics doc id 17338 rev 1 5/10 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 225 v, i d = 0.5 a, r g = 4.7 ?, v gs = 10 v (see figure 4 ) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 0.5 2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 0.5 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 0.5 a, di/dt = 100 a/s v dd = 100 v (see figure 7 ) - tbd tbd tbd ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 0.5 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 7 ) - tbd tbd tbd ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 v obsolete product(s) - obsolete product(s)
test circuits sts1dn45k3 6/10 doc id 17338 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s obsolete product(s) - obsolete product(s)
sts1dn45k3 package mechanical data doc id 17338 rev 1 7/10 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. obsolete product(s) - obsolete product(s)
package mechanical data sts1dn45k3 8/10 doc id 17338 rev 1 so-8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.2 8 0.4 8 c0.17 0.2 3 d4. 8 04. 9 0 5.00 e5. 8 0 6.00 6.20 e1 3 . 8 0 3 . 9 0 4.00 e1.27 h0.25 0.50 l0.40 1.27 l1 1.04 k0 8 ccc 0.10 001602 3 _d obsolete product(s) - obsolete product(s)
sts1dn45k3 revision history doc id 17338 rev 1 9/10 5 revision history table 9. document revision history date revision changes 07-apr-2010 1 first release obsolete product(s) - obsolete product(s)
sts1dn45k3 10/10 doc id 17338 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)
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