2SK3907 2008-12-27 1 toshiba field effect transistor silicon n-chan nel mos type (mach ii -mosvi) 2SK3907 switching regulator applications ? small gate charge: qg = 60 nc (typ.) ? low drain-source on resistance: r ds (on) = 0.18 (typ.) ? high forward transfer admittance: |y fs | = 12 s (typ.) ? low leakage current: i dss = 500 a (v ds = 500 v) ? enhancement model: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 500 v drain-gate voltage (r gs = 20 k ) v dgr 500 v gate-source voltage v gss 30 v dc (note 1) i d 23 drain current pulse (note 1) i dp 92 a drain power dissipation (tc = 25c) p d 150 w single pulse avalanche energy (note 2) e as 552 mj avalanche current i ar 23 a repetitive avalanche energy (note 3) e ar 15 mj channel temperature t ch 150 c storage temperature range t stg -55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/??derating concept and methods??) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristic symbol max unit thermal resistance, channel to case r th (ch-c) 0.833 c/w thermal resistance, channel to ambient r th (ch-a) 50 c/w note 1: ensure that the channel temperature does not exceed 150c during use of the device. note 2: v dd = 90 v, t ch = 25c (initial), l = 1.77 mh, i ar = 23 a, r g = 25 note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm 1. gate 2. drain (heatsink) 3. source jedec D jeita sc-65 toshiba 2-16c1b weight: 4.6 g (typ.) 1 3 2
2SK3907 2008-12-27 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 10 a, v ds = 0 v 30 ? ? v drain cutoff current i dss v ds = 500 v, v gs = 0 v ? ? 500 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 500 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 11.5 a ? 0.18 0.23 forward transfer admittance ? y fs ? v ds = 10 v, i d = 11.5 a 3.4 12 ? s input capacitance c iss ? 4250 ? reverse transfer capacitance c rss ? 10 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 420 ? pf rise time t r ? 12 ? turn-on time t on ? 45 ? fall time t f ? 10 ? switching time turn-off time t off ? 80 ? ns total gate charge q g ? 60 ? gate-source charge q gs ? 50 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 23 a ? 10 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 23 a pulse drain reverse current (note 1) i drp ? ? ? 92 a forward voltage (diode) v dsf i dr = 23 a, v gs = 0 v ? ? -1.7 v reverse recovery time t rr ? 1350 ? ns reverse recovery charge q rr i dr = 23 a, v gs = 0 v, di dr /dt = 100 a/ s ? 24 ? c marking r l = 17.4 0 v 10 v v gs v dd 200 v i d = 11.5 a v out 4.7 duty 1%, t w = 10 s k3907 toshiba lot no. a line indicates lead(pb)-free finish part no. (or abbreviation code)
2SK3907 2008-12-27 3 i d ? v ds drain current i d (a) drain ? source voltage v ds (v) 0 20 4 12 8 16 0 1 5 2 3 4 10 8 6 5 v gs = 4.5 v common source tc = 25c pulse test i d ? v ds drain current i d (a) drain ? source voltage v ds (v) 0 50 10 30 20 40 4 0 20 8 16 common source tc = 25c pulse test v ds ? v gs drain ? source voltage v ds (v) gate ? source voltage v gs (v) 0 20 4 12 8 16 4 0 20 8 12 16 11.5 5.75 i d = 23 a common source tc = 25c pulse test 5.5 5.7 5.3 10 8 6 6.5 5.5 7 v gs = 5 v 12 r ds (on) ? i d drain ? source on resistance r ds (on) (m ) drain current i d (a) 10 1000 1 100 v gs = 10 v common source tc = 25c pulse test 10 100 i d ? v gs drain current i d (a) gate ? source voltage v gs (v) 0 50 10 20 40 2 0 10 6 8 100 25 tc = ? 55c common source v ds = 20 v pulse test ? y fs ? ? i d forward transfer admittance ? y fs ? (s) drain current i d (a) 0.1 100 10 0.1 100 10 30 4 1 1 common source v ds = 20 v pulse test tc = ? 55c 25 100
2SK3907 2008-12-27 4 gate threshold voltage v th (v) case temperature tc (c) v th ? tc common source v ds = 10 v i d = 1 ma pulse test 0 5 1 3 2 4 ? 40 ? 80 160 0 80 120 40 v gs = 0 v 1 3 10 5 drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) common source tc = 25c pulse test 0.1 100 10 1 0 ? 1.6 ? 0.4 ? 1.2 ? 0.8 i d = 23 a 11.5 5.75 common source v gs = 10 v pulse test r ds (on) ? tc drain ? source on resistance r ds (on) (m ) case temperature tc (c) 0 1000 200 600 400 800 ? 80 ? 40 160 0 80 120 40 drain power dissipation p d (w) case temperature tc (c) p d ? tc 200 120 0 0 40 120 160 200 40 160 80 80 gate ? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain ? source voltage v ds (v) 0 0 200 300 500 60 100 80 100 400 20 40 0 8 12 20 4 16 common source i d = 23 a tc = 25c pulse test 100 200 v dd = 400 v v ds v gs c iss c oss c rss 0.1 1000 10 1 1 10 100 100 10000 capacitance c (pf) drain? source voltage v ds (v) c ? v ds common source v gs = 0 v f = 1 mhz tc = 25c pulse test
2SK3907 2008-12-27 5 ?15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 1.77 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as 0 25 200 400 600 1000 800 50 75 100 125 150 safe operating area drain current i d (a) channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) drain ? source voltage v ds (v) 1 0.1 10 100 1000 10 1000 dc operation tc = 25 ` 100 s * 1 ms * i d max (pulse) * v dss max i d max (continuous) 100 0.01 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) 0.01 10 0.1 1 10 100 1 m 10 m 100 m 1 10 0.001 duty = 0.5 0.2 0.1 0 . 05 0.02 0.01 single pulse t p dm t duty = t/t r th (ch-c) = 0.833c/w 1 * : single nonpetitive pulse tc = 25c curves must be derated linearly with increase in temperature
2SK3907 2008-12-27 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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