050-7427 rev c 8-2004 typical performance curves APT80GP60JDF3 sot-227 g e e c isotop ? "ul recognized" maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.2 2.7 2.1 1250 5500 100 symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l APT80GP60JDF3 600 20 30 151 68 330 330a @ 600v 462 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1250 a) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 80a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 80a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 400v, 39a ? low gate charge ? 50 khz operation @ 400v,59a ? ultrafast tail current shutoff ? ssoa rated power mos 7 ? igbt g c e APT80GP60JDF3 600v
050-7427 rev c 8-2004 APT80GP60JDF3 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 80a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 80a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 80a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 9840 735 40 7.5 280 65 85 330 29 40 115 80 795 1535 1200 29 40 150 85 795 2155 1690 unit pf v nc a ns j ns j unit c/w gm min typ max .27 .60 29.2 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7427 rev c 8-2004 typical performance curves APT80GP60JDF3 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce =480v v ce =300v v ce =120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 80a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c= 40a i c= 80a i c= 160a i c= 160a i c= 80a i c= 40a 120 100 80 60 40 20 0 500 400 300 200 100 0 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 3 2.5 2 1.5 1 0.5 0 200 160 120 80 40 0
050-7427 rev c 8-2004 APT80GP60JDF3 t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ge = 15v,t j =125c v ge = 15v v ge = 15v,t j =25c t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature e on2 40a e off 80a e on2 80a e on2 120a e off 120a e off 40a e on2 40a e off 80a e on2 80a e on2 120a e off 120a e off 40a t j = 25 or 125c,v ge = 15v switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) t j =125c, v ge =15v t j = 125c, v ge = 10v or 15v t j = 25c, v ge =15v v ce = 400v t j = 25c , t j =125c r g = 5 ? l = 100 h v ce = 400v r g = 5 ? l = 100 h 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 5 10 15 20 25 30 0 25 50 75 100 125 v ce = 400v v ge = +15v r g = 5 ? 40 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 4000 3500 3000 2500 2000 1500 1000 500 0 6000 5000 4000 3000 2000 1000 0 v ce = 400v v ge = +15v t j = 125c v ce = 400v r g = 5 ? l = 100 h v ce = 400v r g = 5 ? l = 100 h 180 160 140 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 4000 3000 2000 1000 0 4000 3000 2000 1000 0 v ce = 400v r g = 5 ? l = 100 h v ce = 400v r g = 5 ? l = 100 h
050-7427 rev c 8-2004 typical performance curves APT80GP60JDF3 300 2m50 200 150 100 50 0 i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 20,000 10,000 5,000 1,000 500 100 50 10 c ies c oes c res figure 19b, transient thermal impedance model 0.30 0.25 0.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 0.0260 0.0584 0.185 0.00119f 0.0354f 0.463f power (watts) junction temp ( c) rc model case temperature( c) max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = 190 100 50 10 1 10 20 30 40 50 60 70 80 90 100 110 130 i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ?
050-7427 rev c 8-2004 APT80GP60JDF3 figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt60df60 v ce figure 21, inductive switching test circuit v cc t j = 125 c collector voltage gate voltage collector current 90% t d(off) 90% t f 10% 0 switching energy t j = 125 c 10% 10% 5% t d(on) 90% t r 5 % switching energy collector voltage collector current gate voltage
050-7427 rev c 8-2004 typical performance curves APT80GP60JDF3 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 characteristic / test conditions maximum average forward current (t c = 76c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 80a forward voltage i f = 160a i f = 80a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.00 2.58 1.62 APT80GP60JDF3 54 68 600 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery anti-parallel diode min typ max - 35 -55 - 120 -4- - 150 - 1000 -12- -70 - 1750 -38 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 60a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 60a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 60a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 25b, transient thermal impedance model 0.159 c/w 0.255 c/w 0.186 c/w 0.00560 j/ c 0.0849 j/ c 0.489 j/ c power (watts) junction temp ( c) rc model case temperature ( c)
050-7427 rev c 8-2004 APT80GP60JDF3 t j = 125 c v r = 400v 30a 60a 120a t rr q rr q rr t rr i rrm q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55 c t j = 25 c t j = 125 c t j = 150 c 120a 60a 30a 60a 30a 120a duty cycle = 0.5 t j = 150 c t j = 125 c v r = 400v 80 70 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) 200 180 160 140 120 100 80 60 40 20 0 2000 1600 1200 800 400 0 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 400v 180 160 140 120 100 80 60 40 20 0 40 35 30 25 20 15 10 5 0 t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 500 400 300 200 100 0 0 25 50 75 100 125 150 25 50 75 100 125 150 1 10 100 200
050-7427 rev c 8-2004 typical performance curves APT80GP60JDF3 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt60m75l2ll
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